Patents by Inventor Kaori Yoshioka

Kaori Yoshioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dielectric isolation substrate and semiconductor device
    Patent number: 8981473
    Abstract: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: March 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ryo Wada, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto
  • SEMICONDUCTOR DEVICE
    Publication number: 20140312384
    Abstract: A semiconductor device includes a first base layer of a first conductivity type formed on a semiconductor layer, a second base layer of a second conductivity type formed on a first surface of the first base layer, an emitter layer formed on the second base layer, a collector layer of the second conductivity type formed above the first base layer, and a barrier layer of the first conductivity type formed between the first base layer and the second base layer. The barrier layer has a depth from the first surface that is shallower than a depth of the second base layer from the first surface and a dopant concentration that is higher than a dopant concentration of the first base layer. The semiconductor device further includes an insulating film formed on the second base layer and a gate electrode formed on the insulating film.
    Type: Application
    Filed: February 6, 2014
    Publication date: October 23, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ryo WADA, Kaori YOSHIOKA
  • DIELECTRIC ISOLATION SUBSTRATE AND SEMICONDUCTOR DEVICE
    Publication number: 20130049111
    Abstract: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.
    Type: Application
    Filed: March 2, 2012
    Publication date: February 28, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ryo WADA, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto