Abstract: An efficient method of manufacturing a three-dimensional printed wiring board is provided in which a conductor foil can be reliably heat-fused to the board at a relatively low temperature and the three-dimensional shape such as convex and concave of a mold can be reproduced precisely with no residual stress. The method comprises the steps of providing a filmy insulator comprising a thermoplastic resin composition containing 65-35 wt % of a polyaryl ketone resin having a crystal-melting peak temperature of 260° C. or over, and 35-65 wt % of an amorphous polyetherimide resin, and having a glass transition temperature as measured when the temperature is increased for differential scanning calorie measurement of 150-230° C.

Abstract: A printed circuit board has a layer including a resin material, which has a tensile breaking strain of approximately 1% or more at a tensile strain rate of 40%/sec at 25° C., and an Izod impact strength of approximately 1 kgf·cm/cm or more at 25° C. Otherwise, the resin material has a peak value of dynamic loss tangent of 0.05 or more in a range of −100° C. to −50° C. by &bgr; relaxation, and a peak value of dynamic loss tangent of 0.02 or more in a range of 0° C. to 100° C. by &bgr;′ relaxation in a dynamic viscoelasticity spectral measurement. Accordingly, thermal shock resistance and drop shock resistance of the printed circuit board can be improved.

Abstract: A base plate for a printed circuit board, having a conductive foil heat-bonded to at least one side of a film insulator which comprises from 65 to 35 wt % of a polyarylketone resin and from 35 to 65 wt % of a non-crystalline polyether imide resin and of which the glass transition temperature is from 150 to 230° C. and the peak temperature of crystal fusion is at least 260° C., as measured when the temperature is raised in the differential scanning calorimetry, if necessary after forming a through-hole and filling a conductive paste therein, and of which, after the heat bonding, the heat of crystal fusion &Dgr;Hm and the heat of crystallization &Dgr;Hc generated by crystallization during the temperature rise, as measured when the temperature is raised by the differential scanning calorimetry, satisfy the following relation: [(&Dgr;Hm−&Dgr;Hc)/&Dgr;Hm]≦0.5.

Abstract: A semiconductor element-mounting printed board, comprising a substrate having a thermal expansion coefficient not higher than 4.5.times.10.sup.-6 /.degree. C., a buffer layer formed on at least one of the surfaces of the substrate and having a Young's modulus not higher than 450 kg/mm.sup.2, a conductor circuit formed on a surface of the buffer layer, the conductor circuit having predetermined patterns, and a semiconductor element bonded to the conductor circuit by soldering.

Abstract: A practically fast electroless copper plating solution is provided by adding a specific monoamine as an accelerator. The accelerator should be a tertiary monoamine and cannot be a diamine, does not have a complexing ability for copper ion, and does not contain a ketone or carboxyl group or an unsaturated group. Specific examples of such monoamines include triethylamine, tripropylamine, tribenzylamine, N-methylpiperidine, and diethylaminoethanol.

Abstract: By forming a first copper layer on a substrate by using a complexing agent for copper ion, which has a low copper complex stability constant, a uniform second layer can be stably formed by a second complexing agent for a copper ion, which has a high copper complex stability constant, even if the substrate is composed of a material having a low catalytic activity, such as tungsten, or even if the catalytic activity of the substrate is uneven. A similar effect can also be obtained by adding a small amount of a complexing agent for a copper ion, having a low stability constant, to an electroless copper plating bath containing a complexing agent for a copper ion, having a low stability constant. In this case, an effect of preventing stopping of the reaction of the complexing agent of a copper ion, having a high stability constant, is attained.

Abstract: A practically fast electroless copper deposition is obtained by using a trialkanolmonoamine as a complexing agent for copper ion and as an accelerator, by adding it in an excess amount of 1.2 to 30 times the mole concentration of the copper ion. An optimum increased deposition rate of 100 .mu.m/hr is obtained even if additives such as potassium ferrocyanide, 2,2'-bipyridyl, polyethylenegrycol and an anionic surfactant are added.

Abstract: A practically fast electroless copper plating solution is provided by adding a specific monoamine as an accelerator. The accelerator should be a tertiary monoamine and cannot be a diamine, does not have a complexing ability for copper ion, and does not contain a ketone or carboxyl group or an unsaturated group. Specific examples of such monoamines include triethylamine, tripropylamine, tribenzylamine, N-methyl-piperidine, and tris (4-bromophenyl) amine, N-methylmorpholine.

Abstract: In a chemical copper-plating bath comprising a copper sulfate, a complexing agent, a reducing agent, and a pH-adjusting agent, borofluoride is added to enhance the deposition speed of Cu, thus eliminating the problems of a complicated control of the bath.

Abstract: Novel ethylene oxide adducts are provided. They have properties suited for their use as base components of cosmetics and ointments. Thus, cosmetics and ointments containing those ethylene oxide adducts are also provided. There is further provided a method of producing such ethylene oxide adducts in high yields.