Patents by Inventor Kaoru Oohashi
Kaoru Oohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11569073Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.Type: GrantFiled: August 23, 2018Date of Patent: January 31, 2023Assignee: Tokyo Electron LimitedInventors: Jun Hirose, Kaoru Oohashi
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Publication number: 20200219740Abstract: A method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece with the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece, and a heater that is arranged within or near the electrostatic chuck and is divided into a plurality of heater zones. The method includes adjusting a control temperature of the heater with respect to each of the heater zones, and correcting a temperature interference from an adjacent heater zone of each of the heater zones with respect to a setting temperature of each of the heater zones upon adjusting the control temperature.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Inventor: Kaoru OOHASHI
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Patent number: 10629464Abstract: A method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece with the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece, and a heater that is arranged within or near the electrostatic chuck and is divided into a plurality of heater zones. The method includes adjusting a control temperature of the heater with respect to each of the heater zones, and correcting a temperature interference from an adjacent heater zone of each of the heater zones with respect to a setting temperature of each of the heater zones upon adjusting the control temperature.Type: GrantFiled: June 20, 2018Date of Patent: April 21, 2020Assignee: Tokyo Electron LimitedInventor: Kaoru Oohashi
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Publication number: 20190066985Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.Type: ApplicationFiled: August 23, 2018Publication date: February 28, 2019Inventors: Jun HIROSE, Kaoru OOHASHI
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Publication number: 20180301362Abstract: A method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece with the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece, and a heater that is arranged within or near the electrostatic chuck and is divided into a plurality of heater zones. The method includes adjusting a control temperature of the heater with respect to each of the heater zones, and correcting a temperature interference from an adjacent heater zone of each of the heater zones with respect to a setting temperature of each of the heater zones upon adjusting the control temperature.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Inventor: Kaoru OOHASHI
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Patent number: 10026631Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.Type: GrantFiled: February 9, 2017Date of Patent: July 17, 2018Assignee: Tokyo Electron LimitedInventor: Kaoru Oohashi
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Patent number: 9728381Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: GrantFiled: December 5, 2014Date of Patent: August 8, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Akihiro Kikuchi, Satoshi Kayamori, Shinya Shima, Yuichiro Sakamoto, Kimihiro Higuchi, Kaoru Oohashi, Takehiro Ueda, Munehiro Shibuya, Tadashi Gondai
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Publication number: 20170213751Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.Type: ApplicationFiled: February 9, 2017Publication date: July 27, 2017Inventor: Kaoru OOHASHI
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Patent number: 9437402Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: GrantFiled: December 5, 2014Date of Patent: September 6, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Akihiro Kikuchi, Satoshi Kayamori, Shinya Shima, Yuichiro Sakamoto, Kimihiro Higuchi, Kaoru Oohashi, Takehiro Ueda, Munehiro Shibuya, Tadashi Gondai
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Patent number: 9412635Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.Type: GrantFiled: February 6, 2013Date of Patent: August 9, 2016Assignees: Tokyo Electron Limited, Sumitomo Osaka Cement Co., Ltd.Inventors: Yasuharu Sasaki, Kaoru Oohashi, Tomoyuki Takahashi, Tadashi Aoto, Mamoru Kosakai, Shinichi Maeta, Yukio Miura, Takashi Sato, Kei Furuuchi
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Publication number: 20150132863Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.Type: ApplicationFiled: January 9, 2013Publication date: May 14, 2015Applicant: Tokyo Electron LimitedInventor: Kaoru Oohashi
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Publication number: 20150083332Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: ApplicationFiled: December 5, 2014Publication date: March 26, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro KIKUCHI, Satoshi KAYAMORI, Shinya SHIMA, Yuichiro SAKAMOTO, Kimihiro HIGUCHI, Kaoru OOHASHI, Takehiro UEDA, Munehiro SHIBUYA, Tadashi GONDAI
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Publication number: 20150083333Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: ApplicationFiled: December 5, 2014Publication date: March 26, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro KIKUCHI, Satoshi KAYAMORI, Shinya SHIMA, Yuichiro SAKAMOTO, Kimihiro HIGUCHI, Kaoru OOHASHI, Takehiro UEDA, Munehiro SHIBUYA, Tadashi GONDAI
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Publication number: 20140376148Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.Type: ApplicationFiled: February 6, 2013Publication date: December 25, 2014Inventors: Yasuharu Sasaki, Kaoru Oohashi, Tomoyuki Takahashi, Tadashi Aoto, Mamoru Kosakai, Shinichi Maeta, Yukio Miura, Takashi Sato, Kei Furuuchi
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Patent number: 8904957Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: GrantFiled: March 4, 2013Date of Patent: December 9, 2014Assignee: Tokyo Electron LimitedInventors: Akihiro Kikuchi, Satoshi Kayamori, Shinya Shima, Yuichiro Sakamoto, Kimihiro Higuchi, Kaoru Oohashi, Takehiro Ueda, Munehiro Shibuya, Tadashi Gondai
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Patent number: 8869376Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.Type: GrantFiled: July 18, 2013Date of Patent: October 28, 2014Assignee: Tokyo Electron LimitedInventors: Takehiro Ueda, Yoshiyuki Kobayashi, Kaoru Oohashi
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Publication number: 20130299083Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.Type: ApplicationFiled: July 18, 2013Publication date: November 14, 2013Inventors: Takehiro UEDA, Yoshiyuki KOBAYASHI, Kaoru OOHASHI
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Patent number: 8573836Abstract: An apparatus evaluates a substrate mounting device adapted to hold a target substrate placed on a mounting surface and to control a temperature of the target substrate. The apparatus includes an evacuatable airtightly sealed chamber accommodating therein the substrate mounting device, a heat source, arranged in a facing relationship with the mounting surface, for irradiating infrared light. The apparatus further includes an evaluation-purpose substrate adapted to be mounted on the mounting surface in place of the target substrate, the evaluation-purpose substrate being made of an infrared light absorbing material, and having a unit for measuring temperatures at plural sites on a surface and/or inside of the substrate.Type: GrantFiled: October 26, 2007Date of Patent: November 5, 2013Assignee: Tokyo Electron LimitedInventors: Yasuharu Sasaki, Takehiro Ueda, Taketoshi Okajo, Kaoru Oohashi
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Patent number: 8491752Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.Type: GrantFiled: December 12, 2007Date of Patent: July 23, 2013Assignee: Tokyo Electron LimitedInventors: Takehiro Ueda, Yoshiyuki Kobayashi, Kaoru Oohashi
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Patent number: 8387562Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.Type: GrantFiled: September 23, 2011Date of Patent: March 5, 2013Assignee: Tokyo Electron LimitedInventors: Akihiro Kikuchi, Satoshi Kayamori, Shinya Shima, Yuichiro Sakamoto, Kimihiro Higuchi, Kaoru Oohashi, Takehiro Ueda, Munehiro Shibuya, Tadashi Gondai