Patents by Inventor Kaoru Tabata

Kaoru Tabata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6853431
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: February 8, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Masakazu Odaka, Akira Mase, Toru Takayama, Kaoru Tabata, Chizuru Ishigaki, Ippei Kobayashi, Toshimitsu Konuma, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Hiroyuki Sakayori, Akio Osabe, Shunpei Yamazaki
  • Publication number: 20030071957
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Application
    Filed: November 27, 2002
    Publication date: April 17, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Masakazu Odaka, Akira Mase, Toru Takayama, Kaoru Tabata, Chizuru Ishigaki, Ippei Kobayashi, Toshimitsu Konuma, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Hiroyuki Sakayori, Akio Osabe, Shunpei Yamazaki
  • Patent number: 6493057
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 2, 1999
    Date of Patent: December 10, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Masakazu Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki, Toru Takayama, Akira Mase
  • Patent number: 5963288
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this stucture, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: October 5, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 5952676
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: June 6, 1997
    Date of Patent: September 14, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 5379139
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of :he substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 6, 1992
    Date of Patent: January 3, 1995
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 4922974
    Abstract: A method of filling a liquid crystal device with a blended liquid crystal material is set forth. The liquid crystal device is filled by disposing the liquid crystal device having an inlet port, in a vacuum chamber, evacuating the vacuum chamber, supplying the inlet port with the blended liquid crystal material, and elevating the pressure in the chamber to allow the blended liquid crystal material to fill the liquid crystal device through the inlet port by virtue of the differential pressure between the inside and the outside of the liquid crystal device, with the temperature of the blended liquid crystal material being maintained, until the liquid crystal device is completely filled with the blended liquid crystal material, at a temperature higher than the transition temperature of any one of the constituents of the blended liquid crystal material so that the blended liquid crystal material is transformed in its isotropic phase.
    Type: Grant
    Filed: February 14, 1989
    Date of Patent: May 8, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshio Watanabe, Akio Osabe, Akira Mase, Hiroyuki Sakayori, Masahiko Sato, Kaoru Tabata
  • Patent number: 4922972
    Abstract: A method of filling a liquid crystal device including a pair of parallel substrates having external surfaces with a liquid crystal material is set forth. The liquid crystal device is filled by disposing the liquid crystal device in a vacuum chamber between a pair of opposed parallel plates, evacuating the vacuum chamber, supplying the liquid crystal material to an inlet of the device, elevating the pressure in the chamber to allow the liquid crystal material to enter a space formed between the parallel substrates through the inlet by virtue of a differential pressure between the inside and the outside of the liquid crystal device, and applying opposed pressure with the parallel plates to the external surfaces of the parallel substrates respectively in order to form a uniform liquid crystal device. With the external pressure being applied to compensate for the expansion of the liquid crystal device during the elevation of the pressure within the vacuum chamber.
    Type: Grant
    Filed: March 25, 1988
    Date of Patent: May 8, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshio Watanabe, Akio Osabe, Akira Mase, Hiroyuki Sakayori, Masahiko Sato, Kaoru Tabata
  • Patent number: 4874461
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: October 17, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki