Abstract: An apparatus for cutting a substrate comprises first and second lasers, and first and second optical fibers each having an input end and an output end opposite to the input end, wherein the input ends of the first and second optical fibers are connected to the first and second lasers respectively. The output ends of the first and second optical fibers are movable relative to the substrate and are configured to image first and second laser beams onto the substrate simultaneously for cutting the substrate.

Abstract: During a wafer cutting process, the wafer substrate is inspected by illuminating it on both sides, and imaging light which has both been reflected from and transmitted through the substrate. The substrate is supported on a stage, and first and second illumination sources are arranged to respectively illuminate the first surface of the substrate supported by the stage and to illuminate the second surface of the substrate supported by the stage in use. At least one camera is adapted to image light received from the substrate when it is illuminated by the first illumination source and/or the second illumination source.

Abstract: An apparatus for radiatively scribing a planar semiconductor substrate along a scribelane that extends between opposing rows of semiconductor devices on a target surface of the substrate. The scribelane extends parallel to a first direction parallel to a second direction, these first and second directions lying respectively parallel to X and Y axes of a Cartesian coordinate system. Such an apparatus may include an illuminator for producing an array of light beams; a projection system for focusing the light beams onto the target surface; an actuator system for causing relative displacement of a substrate holder with respect to light beams parallel to an XY plane; and an adjustable spatial filter located between the illuminator and the substrate holder, and including motorized plates whose position is adjustable so as to at least partially block selectable light beams of the light beam array.

Abstract: A method is described of radiatively cutting a wafer, the method comprising the steps of low power cutting of two trenches followed by high power cutting of a fissure. A single pulsed radiation beam is split into a first pulsed radiation beam for cutting at least one of the trenches and a second pulsed radiation beam for cutting the fissure. When cutting a fissure on the wafer in a cutting direction along a cutting street, the first and second radiation beams are directed simultaneously with the first radiation beam leading and the second radiation beam trailing. For cutting a fissure in the opposite cutting direction, a third pulsed radiation beam for trenching is split from said single pulsed radiation beam.

Abstract: A method is described of radiatively cutting a wafer, the method comprising the steps of low power cutting of two trenches followed by high power cutting of a fissure. A single pulsed radiation beam is split into a first pulsed radiation beam for cutting at least one of the trenches and a second pulsed radiation beam for cutting the fissure. When cutting a fissure on the wafer in a cutting direction along a cutting street, the first and second radiation beams are directed simultaneously with the first radiation beam leading and the second radiation beam trailing. For cutting a fissure in the opposite cutting direction, a third pulsed radiation beam for trenching is split from said single pulsed radiation beam.

Abstract: An apparatus for cutting a substrate comprises first and second lasers, and first and second optical fibers each having an input end and an output end opposite to the input end, wherein the input ends of the first and second optical fibers are connected to the first and second lasers respectively. The output ends of the first and second optical fibers are movable relative to the substrate and are configured to image first and second laser beams onto the substrate simultaneously for cutting the substrate.

Abstract: A method of dicing a plurality of integrated devices included in a semiconductor substrate using laser energy comprises the steps of directing a first laser beam onto a cutting line along the substrate to ablate a portion of the substrate located along the cutting line to be diced, the portion of the substrate that is ablated forming a recast material adjacent to the cutting line of the substrate that has been diced. A second laser beam is directed onto another portion of the substrate adjacent to the cutting line to conduct heat processing of the recast material formed adjacent to the cutting line.

Abstract: A method of dicing a plurality of integrated devices included in a semiconductor substrate using laser energy comprises the steps of directing a first laser beam onto a cutting line along the substrate to ablate a portion of the substrate located along the cutting line to be diced, the portion of the substrate that is ablated forming a recast material adjacent to the cutting line of the substrate that has been diced. A second laser beam is directed onto another portion of the substrate adjacent to the cutting line to conduct heat processing of the recast material formed adjacent to the cutting line.

Abstract: A method of radiatively scribing a substantially planar semiconductor substrate using a laser scribing apparatus, uses a laser scribing head configured and arranged to produce a two-dimensional array of laser beam spots to effect the scribing. In an embodiment, the spots of the array extend substantially parallel to X and Y directions in the plane of the substrate. In an embodiment, spots at a periphery in one or both directions of the array have a lower intensity than laser beams in a central portion of the array.

Abstract: An apparatus for radiatively scribing a substantially planar semiconductor substrate along a scribelane that extends between opposing rows of semiconductor devices on a target surface of the substrate, said scribelane having a length extending parallel to a first direction and a width extending parallel to a second direction, these first and second directions lying respectively parallel to X and Y axes of a Cartesian coordinate system, comprising: A substrate holder for holding the substrate; An illuminator for producing an adjustable array of several light beams; A projection system for focusing said light beams onto said target surface of the substrate when held on the substrate holder; An actuator system for causing relative displacement of the substrate holder with respect to said light beams parallel to an XY plane, which apparatus further comprises: An adjustable spatial filter located between said illuminator and said substrate holder, comprising a plurality of motorized plates whose position can

Abstract: A method of radiatively scribing a substantially planar semiconductor substrate using a laser scribing apparatus, uses a laser scribing head configured and arranged to produce a two-dimensional array of laser beam spots to effect the scribing. In an embodiment, the spots of the array extend substantially parallel to X and Y directions in the plane of the substrate. In an embodiment, spots at a periphery in one or both directions of the array have a lower intensity than laser beams in a central portion of the array.

Abstract: A method of singulating a semiconductor wafer having two surfaces separated by a thickness T<200 ?m includes partitioning it along a network of scribelines on one side. The other side is secured to an elastic foil, which is clamped to a wafer table. A radiative scribing tool is used to produce at least one laser beam having a pulse duration P?75 ps, and causing the laser beam to scan along each of the scribelines so as to create a scribe with a depth D<T, thereby leaving the second surface intact. The foil is laterally stretched to sever the second major surface along the path of the scribes. In an embodiment, P<CPP, the Time Constant of phonon-phonon coupling in the wafer at the location of incidence of the laser beam.