Patents by Inventor Karem Kapkin

Karem Kapkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of hafnium-based high-k dielectric
    Patent number: 7205247
    Abstract: A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: April 17, 2007
    Assignee: Aviza Technology, Inc.
    Inventors: Sang-In Lee, Jon S. Owyang, Yoshihide Senzaki, Aubrey L. Helms, Jr., Karem Kapkin