Abstract: A method for thinning a sapphire substrate is provided that includes placing a sapphire substrate in a pre-heat tank to raise the temperature of said sapphire substrate; placing the pre-heated sapphire substrate in a wet etch tank comprising a solution including at least one of H2SO4 and H3PO4 at a temperature ranging between 200-400° C.; monitoring the time to determine when to remove said sapphire substrate from said wet etch tank to thin said sapphire substrate; and placing the sapphire substrate in a cool-down tank to lower the temperature of the sapphire substrate. The method provides for a high throughput and is cost effective process, thereby allowing for the adoption of sapphire in high volume and lower cost applications.

Abstract: An improved method for post-texturing cleaning, surface conditioning, and rinsing silicon wafers or similar surfaces, with particular, although not exclusive, applicability in photovoltaic applications which includes cleaning the surfaces sequentially with dilute HF/HCl and dilute oxidizing rinse, particularly following texturing with concentrated HF/HNO3 and/or KOH. The method allows for the recycling of the oxidizing rinse in the dilute HF/HCl and other upstream rinse steps.

Abstract: A system is provided for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions.

Abstract: The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity.

Abstract: A method and cluster tool for selectively removing contaminating particles from a substrate surface using a laser. An inspection tool scans the substrate surface to detect and identify any defects on the substrate surface, and then suitable software analyzes the scanned data to determine characteristics of the defect including the type of defect, the number of defects, sizes of each defect and the planar x, y coordinates of each defect. This data is used to command a laser tool to remove only those defects identified as contaminants that are capable of being removed from the surface of the substrate and may be detrimental to subsequent substrate processing techniques. The laser contacts this identified contaminant at its x, y coordinates to remove only such contaminant while not substantially treating or directly contacting the area surrounding the contaminant, thereby preventing damaging or altering the substrate surface.

Abstract: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials.

Abstract: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials.

Abstract: A method of manufacturing a semiconductor device includes a first etch procedure that limits the extent of damage to the silicon substrate base of the semiconductor device, and a subsequent etch procedure operative to remove damaged portions of the silicon substrate base of the device remaining after the first etch procedure.

Abstract: An improved method of planarizing a side surface of a partially completed integrated circuit device comprises, in sequence, the steps of depositing on the side surface a spin-on glass coating; partially curing the coating; back etching the coating to remove portions thereof which overlie insulation-encapsulated electrically conductive portions of the device; and then subjecting the remaining coating portions, which are disposed within and level off previously depressed portions of the side surface, to an oxygen plasma final curing process, preferably utilizing a downstream stripper type oxygen plasma generator. By performing the back etching step prior to the oxygen plasma curing step, undesirable cracking of the remaining coating portions is advantageously avoided.

Abstract: A method of providing a planar or iso-planar surface to the interlevel dielectric layer between metal layers of a multilevel MOS wafer includes applying a first dielectric over the first metal layer, applying a layer of spin-on glass over the first dielectric layer, etching the spin-on glass layer in an etch process in which the rate of etch of the spin-on glass is approximately the same as the rate of etch of the first dielectric to reveal at least a portion of the first dielectric layer. A second dielectric layer is placed over the surface of the first dielectric. Vias may then be defined through the dielectric layers, and the second metal layer may be applied over the relatively smooth surface of the second dielectric layer.