Abstract: A laser source includes a semiconductor pad containing an active waveguide arranged on a functionalized substrate having an integrated waveguide. The integrated waveguide is formed from a stack of a first portion and of a second portion. A Bragg grating is arranged in the first portion and is covered by the second portion.

Abstract: This method comprises: before bonding a substrate to a layer of encapsulated semiconductor material in which a first part of an optical component is produced, producing indented pads inside a buried layer of silicon oxide, with each of these pads comprising an embedded face that extends parallel to an interface between the buried layer and the layer of encapsulated semiconductor material to a predetermined depth inside the buried layer, with each of the embedded faces being made of a material different from silicon oxide; then thinning the buried layer in order to leave a residual silicon oxide layer on the layer of encapsulated semiconductor material, with this thinning comprising an operation involving thinning the buried layer, with this thinning stopping as soon as the embedded face of the pads is exposed.

Abstract: An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.

Abstract: An assembly including a first waveguide produced in a first photonic chip and that extends in a first direction in order to guide an optical signal at a wavelength ?, an array of a plurality of second waveguides, which is produced in a second photonic chip adjoined to the first photonic chip, and a power summer including inputs that are optically connected to one end of each of the second waveguides. Each of the second waveguides includes upstream and downstream segments that are offset with respect to each other in the second direction. The configurations of the first waveguide and of the second waveguides are such that, for any position of the first waveguide above the array, the distance between one of the segments of the first waveguide and one of the segments of one of the second waveguides is smaller than ?/2.

Abstract: The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Abstract: A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.

Abstract: A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is Si1-xGex, where x is in the range between 0.2and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Abstract: The invention relates to a process for fabricating an optoelectronic system (1) comprising an optical device (60) coupled to an integrated photonic circuit (20), comprising producing a lower waveguide (13.1) from the thin single-crystal-silicon layer (13) of a first SOI substrate (10), then joining a second SOI substrate (40) thereto and producing an intermediate waveguide (43.1) from the thin single-crystal-silicon layer (43) of the second SOI substrate (40).

Abstract: A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Abstract: The invention is concerned with a structured optical fibre sensor, comprising a light source (1), a detection system (2) and a Bragg grating optical fibre (3) connected to said source and said system. The light source is a wavelength-tunable laser emission device (1) comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R1, R2, RN?1, RN) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.

Abstract: An assembly including a first waveguide produced in a first photonic chip and that extends in a first direction in order to guide an optical signal at a wavelength ?, an array of a plurality of second waveguides, which is produced in a second photonic chip adjoined to the first photonic chip, and a power summer including inputs that are optically connected to one end of each of the second waveguides. Each of the second waveguides includes upstream and downstream segments that are offset with respect to each other in the second direction. The configurations of the first waveguide and of the second waveguides are such that, for any position of the first waveguide above the array, the distance between one of the segments of the first waveguide and one of the segments of one of the second waveguides is smaller than ?/2.

Abstract: A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met: ? n = 1 N 2 ? L 2 , n ? neff 2 , n - ? n = 1 N 1 ? L 1 , n ? neff 1 , n = k f ? ? Si where: kf is a preset integer number higher than or equal to 1, N1 and N2 are the numbers of sections in the first and second arms, respectively, L1,n and L2,n are the lengths of the nth sections of the first and second arms, respectively, neff1,n and neff2,n are the effective indices of the nth sections of the first and second arms, respectively.

Abstract: The invention relates to a wavelength-tunable laser emission device (1), comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (MA) and a tunable spectral filter using the Vernier effect (F). This filter comprises at least three resonant rings (R1, R2, RN-1, RN) arranged in cascade, each resonant ring integrating a loop mirror with wavelength tunable reflectivity.

Abstract: The invention is concerned with a structured optical fibre sensor, comprising a light source (1), a detection system (2) and a Bragg grating optical fibre (3) connected to said source and said system. The light source is a wavelength-tunable laser emission device (1) comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R1, R2, RN?1, RN) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

Abstract: A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: ? n = 1 N 2 ? L 2 , n ? neff 2 , n - ? n = 1 N 1 ? L 1 , n ? neff 1 , n = k f ? ? Si where: kf is a preset integer number higher than or equal to 1, N1 and N2 are the numbers of sections in the first and second arms, respectively, L1,n and L2,n are the lengths of the nth sections of the first and second arms, respectively, neff1,n and neff2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.

Abstract: A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Abstract: A photodiode which includes a core of a first waveguide that terminates in a tapered termination that extends above a core, made of germanium or of SiGe, of a second waveguide, a matching strip that extends opposite the tapered termination on one side and opposite the core of the second waveguide on the opposite side, this matching strip being coupled optically to the core of the second waveguide by an evanescent coupling and including a first zone inside which its effective propagation index is equal to the effective propagation index of a second zone of the tapered termination, these first and second zones optically coupling the tapered termination to the matching strip through a modal coupling, and a low-index layer that extends between the matching strip and the tapered termination.

Abstract: The invention relates to a laser source comprising a semiconductor pad 10 containing an active waveguide 12 arranged on a functionalized substrate 20 comprising an integrated waveguide 22. The integrated waveguide 22 is formed from a stack of a first portion 23 and of a second portion 24. A Bragg grating 2 is arranged in the first portion 23 and is covered by the second portion 24.