Patents by Inventor Karim Huet

Karim Huet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of laser irradiation of a patterned semiconductor device
    Patent number: 11322358
    Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: May 3, 2022
    Assignee: LASER SYSTEMS & SOLUTIONS OF EUROPE
    Inventors: Karim Huet, Fulvio Mazzamuto, Cyril Dutems
  • METHOD OF LASER IRRADIATION OF A PATTERNED SEMICONDUCTOR DEVICE
    Publication number: 20210125831
    Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.
    Type: Application
    Filed: January 14, 2019
    Publication date: April 29, 2021
    Inventors: Karim HUET, Fulvio MAZZAMUTO, Cyril DUTEMS
  • Low resistance contacts for semiconductor devices
    Patent number: 9607858
    Abstract: The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: March 28, 2017
    Assignees: Laser Systems & Solutions of Europe (LASSE) Screen Semiconductor Solutions Co. Ltd., University College Cork—National University of Ireland, Cork
    Inventors: Ray Duffy, Maryam Shayesteh, Karim Huet
  • IMPROVED LOW RESISTANCE CONTACTS FOR SEMICONDUCTOR DEVICES
    Publication number: 20150364561
    Abstract: The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 17, 2015
    Inventors: Ray Duffy, Maryam Shayesteh, Karim Huet