Patents by Inventor Karim Mynbaev

Karim Mynbaev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of crystal growth and resulted structures
    Patent number: 6579359
    Abstract: A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: June 17, 2003
    Assignee: Technologies and Devices International, Inc.
    Inventors: Marina Mynbaeva, Denis Tsvetkov, Vladimir Dmitriev, Alexander Lebedev, Nataliya Savkina, Alexander Syrkin, Stephen Saddow, Karim Mynbaev