Patents by Inventor Karl E. Boggs
Karl E. Boggs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160032221Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: July 6, 2015Publication date: February 4, 2016Inventors: Jeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
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Patent number: 9074170Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: October 20, 2009Date of Patent: July 7, 2015Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
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Patent number: 9074169Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.Type: GrantFiled: January 26, 2010Date of Patent: July 7, 2015Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Steven Bilodeau, Karl E. Boggs, Ping Jiang, Michael B. Korzenski, George Mirth, Kim Y. Van Berkel
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Publication number: 20150162213Abstract: Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.Type: ApplicationFiled: May 10, 2013Publication date: June 11, 2015Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Steven M. Bilodeau, Emanuel I. Cooper, Li-Min Chen, Jeffrey A. Barnes, Mark Biscotto, Karl E. Boggs, Rekha Rajaram
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Publication number: 20150114429Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.Type: ApplicationFiled: May 17, 2013Publication date: April 30, 2015Applicants: ATMI Taiwan Co., Ltd., Advanced Technology Materials, Inc.Inventors: Shrane Ning Jenq, Karl E. Boggs, Jun Liu, Nicole Thomas
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Patent number: 8618036Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: GrantFiled: November 14, 2011Date of Patent: December 31, 2013Assignees: International Business Machines Corporation, Advanced Technology Materials, Inc.Inventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C. M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Publication number: 20130123159Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: ApplicationFiled: November 14, 2011Publication date: May 16, 2013Applicants: ADVANCED TECHNOLOGY MATERIALS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C.M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Publication number: 20120283163Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: October 20, 2009Publication date: November 8, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
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Patent number: 8304344Abstract: A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.Type: GrantFiled: February 5, 2008Date of Patent: November 6, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Karl E. Boggs, Michael S. Darsillo, Peter Wrschka, James Welch
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Patent number: 8236695Abstract: A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.Type: GrantFiled: September 19, 2008Date of Patent: August 7, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Jun Liu, Mackenzie King, Michael S. Darsillo, Karl E. Boggs, Jeffrey F. Roeder, Peter Wrschka, Thomas H. Baum
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Publication number: 20120015857Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.Type: ApplicationFiled: January 26, 2010Publication date: January 19, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Steven Bilodeau, Karl E. Boggs, Ping Jiang, Michael B. Korzenski, George Mirth, Kim Y. Van Berkel
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Publication number: 20100087065Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a copper removal CMP composition, which is used to selectively remove and planarize copper, into a barrier removal CMP composition, which is used to selectively remove barrier layer material, on a single CMP platen pad.Type: ApplicationFiled: January 31, 2008Publication date: April 8, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Karl E. Boggs, Jeffrey Giles, Michael S. Darsillo, Melissa A. Petruska, Peter Wrschka
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Publication number: 20090253072Abstract: The invention is to a reversible photobleachable material comprised of nanoparticles of indium gallium oxide or gallium oxide, and a method of exposing a substrate, such as in semiconductor manufacture, using same.Type: ApplicationFiled: April 1, 2009Publication date: October 8, 2009Inventors: Melissa A. Petruska, Guiquan Pan, Thomas H. Baum, Karl E. Boggs
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Publication number: 20090215269Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.Type: ApplicationFiled: June 6, 2006Publication date: August 27, 2009Applicant: Advanced Technology Materials Inc.Inventors: Karl E. Boggs, Michael S. Darsillo, Peter Wrschka, James Welch, Jeffrey Giles, Michele Stawasz
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Publication number: 20090137122Abstract: A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.Type: ApplicationFiled: September 19, 2008Publication date: May 28, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jun Liu, Mackenzie King, Michael S. Darsillo, Karl E. Boggs, Jeffrey F. Roeder, Peter Wrschka, Thomas H. Baum
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Publication number: 20080254628Abstract: A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.Type: ApplicationFiled: February 5, 2008Publication date: October 16, 2008Applicant: Advanced Technology Materials, Inc.Inventors: Karl E. Boggs, Michael S. Darsillo, Peter Wrschka, James Welch
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Patent number: 7361603Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.Type: GrantFiled: April 28, 2005Date of Patent: April 22, 2008Assignee: Advanced Technology Materials, Inc.Inventors: Jun Liu, Mackenzie King, Michael Darsillo, Karl E. Boggs, Jeffrey F. Roeder, Thomas H. Baum
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Patent number: 6857434Abstract: A method and structure polishes and cleans silicon wafers by mixing a marker with a slurry to form a slurry mixture, performs chemical mechanical polishing on a silicon wafer using the slurry mixture, rinses the slurry mixture from the silicon wafer, checks the silicon wafer for marker residue, and repeats the rinsing process if the checking process detects the marker residue on the wafer.Type: GrantFiled: January 24, 2002Date of Patent: February 22, 2005Assignee: International Business Machines CorporationInventors: Kwong Hon Wong, Karl E. Boggs, Raphael Mitchell, Uldis A. Ziemins
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Publication number: 20030139048Abstract: A method and structure polishes and cleans silicon wafers by mixing a marker with a slurry to form a slurry mixture, performs chemical mechanical polishing on a silicon wafer using the slurry mixture, rinses the slurry mixture from the silicon wafer, checks the silicon wafer for marker residue, and repeats the rinsing process if the checking process detects the marker residue on the wafer.Type: ApplicationFiled: January 24, 2002Publication date: July 24, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kwong Hon Wong, Karl E. Boggs, Raphael Mitchell, Uldis A. Ziemins
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Patent number: 6325696Abstract: A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.Type: GrantFiled: September 13, 1999Date of Patent: December 4, 2001Assignee: International Business Machines CorporationInventors: Karl E. Boggs, Kenneth M. Davis, William F. Landers, Michael F. Lofaro, Adam D. Ticknor, Ronald D. Fiege