Abstract: An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. A central shaft extends between the actuator and pedestal, the central shaft configured to move the pedestal along the central axis. A lift pad is configured to rest upon the pedestal and having a pad top surface configured to support a wafer placed thereon. A pad shaft extends between the actuator and the lift pad and controls movement of the lift pad. The pad shaft is positioned within the central shaft and is configured to separate the lift pad from the pedestal top surface by a process rotation displacement when the pedestal is in an upwards position. The pad shaft is configured to rotate relative to the pedestal top surface between first and second angular orientations.

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.

Abstract: Each of multiple plasma processing chambers has an RF power input line connected to receive RF power from a common RF power source. An RF control module is connected to distribute RF power from the common RF power source to the RF power input lines of the multiple chambers. A voltage sensor and a current sensor are connected to a corresponding RF power input line. Each voltage sensor measures an instantaneous electrical voltage present on its RF power input line. Each current sensor measures an instantaneous electrical current present on its RF power input line. An analog multiplier module is connected to receive as inputs the instantaneous electrical voltage from its corresponding voltage sensor and the instantaneous electrical current from its corresponding current sensor. Each analog multiplier module generates an output signal that indicates an instantaneous RF power present on the corresponding RF power input line of the corresponding chamber.

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: A radio frequency (RF) power supply is provided. The RF power supply includes a first frequency oscillator for generating a first frequency signal and a second frequency oscillator for generating a second frequency signal. Also provided is an amplifier and a first switch connected to an output of the first frequency oscillator and a second switch connected to an output of the second frequency oscillator. An output of the first switch and the second switch are connected to an input of the amplifier. Also provided is a switch control coupled to the first switch and the second switch. The switch control is configured to enable a connection via the first and second switches from only one of the first frequency oscillator or the second frequency oscillator to the amplifier at one time. The amplifier is configured to power amplify both of the first and second frequency signals from the first and second frequency oscillators.

Abstract: A spatial atomic layer deposition (ALD) system is disclosed. The system includes a chamber that includes a plurality of zones oriented along a track. Also included is a shuttle that is configured to support the substrate and transport the substrate to each of the plurality of zones to enable deposition of a thin film. The shuttle includes an RF power electrode and an RF ground electrode coupled to an RF power source. The RF electrode and the RF ground electrode are each embedded in the shuttle, such that power provided by the RF power source to the shuttle moves with the shuttle to each of the zones. The RF power source is configured to be activated in synchronization with moving the shuttle to one of the zones.

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

Abstract: Each of multiple plasma processing chambers has an RF power input line connected to receive RF power from a common RF power source. An RF control module is connected to distribute RF power from the common RF power source to the RF power input lines of the multiple chambers. A voltage sensor and a current sensor are connected to a corresponding RF power input line. Each voltage sensor measures an instantaneous electrical voltage present on its RF power input line. Each current sensor measures an instantaneous electrical current present on its RF power input line. An analog multiplier module is connected to receive as inputs the instantaneous electrical voltage from its corresponding voltage sensor and the instantaneous electrical current from its corresponding current sensor. Each analog multiplier module generates an output signal that indicates an instantaneous RF power present on the corresponding RF power input line of the corresponding chamber.

Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.

Abstract: Tubing structures are connected to each other to form a tubing assembly having one or more fluid pathways from a fluid entrance to a fluid exit. A heating device is bonded to the tubing structures along a length of the tubing assembly. The heating device has a flexibility to follow along one or more bends present along the length of the tubing assembly. The heating device includes one or more heater traces embedded within an encasing material. The encasing material is thermally conductive and electrically insulative. The one or more heater traces are formed of a material that generates heat in the presence of an electrical current. The heating device has a continuous and unbroken structure along the length of the tubing assembly. An encapsulation layer of thermal insulating material is disposed over the tubing assembly and covers the heating device.

Abstract: A tubing assembly includes a plurality of tubing structures connected to each other in a configuration providing one or more fluid pathways through the plurality of tubing structures from a fluid entrance to a fluid exit of the plurality of tubing structures. An electrical resistance heating filament wire is wound around the plurality of tubing structures in an unbroken manner from the fluid entrance to the fluid exit. The electrical resistance heating filament wire has a first electrical lead located proximate to the fluid entrance of the plurality of tubing structures and a second electrical lead located proximate to the fluid exit of the plurality of tubing structures. An encapsulation layer of thermal insulating material is disposed over an entirety of the plurality of tubing structures and covers the electrical resistance heating filament wire wound around the plurality of tubing structures with the first and second electrical leads exposed.

Abstract: A method for processing a substrate using a plasma chamber. The method includes providing the substrate on a pedestal of the plasma chamber, the substrate having a material layer that has a porous structure and a least one feature formed in the material layer that exposes one or more open pores of the porous structure.

Abstract: A radio frequency (RF) power supply is provided. The RF power supply includes a first frequency oscillator for generating a first frequency signal and a second frequency oscillator for generating a second frequency signal. Also provided is an amplifier and a first switch connected to an output of the first frequency oscillator and a second switch connected to an output of the second frequency oscillator. An output of the first switch and the second switch are connected to an input of the amplifier. Also provided is a switch control coupled to the first switch and the second switch. The switch control is configured to enable a connection via the first and second switches from only one of the first frequency oscillator or the second frequency oscillator to the amplifier at one time. The amplifier is configured to power amplify both of the first and second frequency signals from the first and second frequency oscillators.

Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.

Abstract: A method for processing a substrate using a plasma chamber. The method includes providing the substrate on a pedestal of the plasma chamber, the substrate having a material layer that has a porous structure and a least one feature formed in the material layer that exposes one or more open pores of the porous structure.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and apparatus, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.