Abstract: A measuring arrangement includes an electrostatic concentrator, a surface and an imaging sensor which are configured to detect particles.

Abstract: What is shown is a cyclic accelerator for accelerating charge carriers. The cyclic accelerator includes a charge carrier source configured to generate free charge carriers, a vacuum chamber configured to receive the free charge carriers, wherein the vacuum chamber is produced by means of MEMS technology, and wherein at least a main surface region of the vacuum chamber has a semiconductor material. In addition, the cyclic accelerator has electrodes configured to accelerate the free charge carriers in the vacuum chamber by means of an alternating current field, and a magnetic field generator configured to generate a magnetic field perpendicularly to the direction of movement of the charge carriers.

Abstract: A method for detecting resistant germs in a sample includes contacting the sample by a sample carrier which has an agent for killing different germs. In addition, the method includes introducing the sample carrier into an analyzer and detecting light emissions from the sample carrier by the analyzer. An indication is output by the analyzer indicating that the sample contains at least one germ resistant to the agent for killing different germs, if the light emission exceeds a threshold value, or indicating that the sample does not contain germs resistant to the agent for killing different germs, if the light emission does not exceed the threshold value.

Abstract: A measuring arrangement includes an electrostatic concentrator, a surface and an imaging sensor which are configured to detect particles.

Abstract: A method for detecting resistant germs in a sample includes contacting the sample by a sample carrier which has an agent for killing different germs. In addition, the method includes introducing the sample carrier into an analyzer and detecting light emissions from the sample carrier by the analyzer. An indication is output by the analyzer indicating that the sample contains at least one germ resistant to the agent for killing different germs, if the light emission exceeds a threshold value, or indicating that the sample does not contain germs resistant to the agent for killing different germs, if the light emission does not exceed the threshold value.

Abstract: What is shown is a cyclic accelerator for accelerating charge carriers. The cyclic accelerator includes a charge carrier source configured to generate free charge carriers, a vacuum chamber configured to receive the free charge carriers, wherein the vacuum chamber is produced by means of MEMS technology, and wherein at least a main surface region of the vacuum chamber has a semiconductor material. In addition, the cyclic accelerator has electrodes configured to accelerate the free charge carriers in the vacuum chamber by means of an alternating current field, and a magnetic field generator configured to generate a magnetic field perpendicularly to the direction of movement of the charge carriers.

Abstract: A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Abstract: In a method for handling in parallel a plurality of circuit chips, which are arranged in a first arrangement, which corresponds to their arrangement in the original wafer, on the surface of an auxiliary carrier, the plurality of circuit chips is picked up by a plurality of pick up devices. The plurality of pick up devices with the picked up circuit chips is moved simultaneously to one or several carriers, in such a way that, simultaneously with the motion, the first arrangement of the circuit chips is changed into a second arrangement, which is different from the first arrangement. Then the circuit chips are simultaneously placed in the second arrangement on the one or several carriers.

Abstract: The present invention relates to a method of producing very thin substrate layers, particularly thin semiconductor areas, which may comprise integrated circuits. In the method two substrates (1, 2) are bonded by their faces via one or several intermediate connecting layers (3, 4). At least one of the bonding layers or the face of one of the substrates is structured before in such a way that channel-shaped recesses (5) are formed which permit a lateral penetration of an etching agent. The resulting wafer stack is thinned from one side down to the desired thickness of the layer. Finally, this thin layer is detached from the remaining substrate by introduction of the etching agent into the channel-shaped recesses. This detaching process is a low-price wet chemical process that does not expose the chip and the added value integrated thereon to any risk.

Abstract: A data recorder has at least one sensor unit to compile at least one measurement value to be recorded during a monitoring interval, a control unit to control the compiling and recording of measurement data, a clock unit to provide a reference time on the basis of which the actual measurement times can be defined, a memory unit to store the measurement values compiled and the corresponding reference time provided for each measurement value, a battery unit for power supply, a fixation unit to fix the data recorder to an item to be monitored, and an interruption unit which interrupts the recording and/or compiling of measurement data upon any manipulation of the fixation unit.

Abstract: A process is disclosed for producing a semiconductor structure with a highly conductive buried layer with the following steps: an insulating layer is applied to a first surface of a first semiconductor substrate, an insulating layer is applied on a surface of a layer of highly conductive material which is physically separate from the first semiconductor substrate and then the insulation layers are bonded together.

Abstract: In a process for the thin etching of substrates which are adapted to be etched by chemical etching agents, a predeterminable substrate layer thickness is obtained with an unaffected single-crystal grid structure of the substrate in that the substrate is irradiated during the etching process by means of a radiation source whose radiation impinges substantially perpendicularly to the substrate surface, the substrate consists of a radiation-absorbent material and the wavelength of the main component of the radiation is chosen such that the absorption length of the radiation of this wavelength in this substrate material is greater than the desired substrate layer thickness.