Abstract: Processing parameters of at least one plate-shaped object, e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool are adjusted depending on which processing device out of at least one set of processing devices has been used for the semiconductor device in a preceding step. A virtual or physical tag is generated, which connects the semiconductor device identification with the processing device identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-units. The amount of compensation is detected and evaluated by metrology tools, which—depending on the sequence of the metrology step relative to the processing step to be adjusted—either feed-forward or feed-backward their results to the processing tool. The yield of semiconductor device production is advantageously increased.

Abstract: A process tool, preferably a spin coater, includes a set of at least three arms and an adjustable rinse nozzle. The arms lift a substrate, e.g. a semiconductor wafer, from a chuck inside the process chamber after having performed the corresponding manufacturing step, e.g. coating. The contact area between the arms and the substrate is as small as possible. The rinse nozzle dispenses a solvent liquid onto the backside of the substrate, thereby removing contaminating particles located at the area of contact between the vacuum channels of the chuck and the substrate. The set of arms rotates for a homogeneous cleaning. A gas flowing out of vacuum ports of the chuck prevents the vacuum ports from being obstructed with particles. While the substrate is being lifted, the chuck can also be cleaned by dispensing the solvent liquid onto the chuck.

Abstract: An electronic device (205) is attached to a container (200) that carries a lithography mask (201) through a semiconductor factory (100) form a first station (110) to a second station (120). In the device, a receiver unit (210) receives first data (111) indicating how the first station has used the mask in a first process; a memory unit (220) temporarily stores the first data; a processor unit (230) processes the first data and provides second data (122) indicating how the second station uses the mask in a second future process; and a transmitter unit (240) transmits the second data to the second station or to a factory host.

Abstract: The invention relates to a method for measuring a required feature of a thin layer (4) used in a polishing process that is carried out by a polish head by producing a localized temperature rise on the surface of the layer (4) by focusing a short pump laser pulse (11) on the surface of the layer, as to generate a sound wave (13) that propagates into the layer; repeated measuring the surface reflection properties of the layer, by passing a probe laser pulse (21) and focusing it on the surface of the layer and by monitoring the portion of the probe laser pulse that is reflected (22) by the surface, as to detect a change in surface reflection properties caused by a boundary echo (32) that is a reflected part of the sound wave (13); measuring the elapsed time between the generation of the sound wave and the change in surface reflection properties; and calculating the required layer feature. Furthermore the invention relates to a measuring apparatus, which is able to perform the above-mentioned method.

Abstract: A process tool, preferably a spin coater, includes a set of at least three arms and an adjustable rinse nozzle. The arms lift a substrate, e.g. a semiconductor wafer, from a chuck inside the process chamber after having performed the corresponding manufacturing step, e.g. coating. The contact area between the arms and the substrate is as small as possible. The rinse nozzle dispenses a solvent liquid onto the backside of the substrate, thereby removing contaminating particles located at the area of contact between the vacuum channels of the chuck and the substrate. The set of arms rotates for a homogeneous cleaning. A gas flowing out of vacuum ports of the chuck prevents the vacuum ports from being obstructed with particles. While the substrate is being lifted, the chuck can also be cleaned by dispensing the solvent liquid onto the chuck.

Abstract: A semiconductor wafer (10), a method of providing information on a semiconductor wafer (10), a system of semiconductor wafer (10) and reading means, and a method of reading information from a semiconductor wafer (10) are provided. The invention is characterized by magnetic means (14) as information carrier and the respective magnetic sensors (26) to read such information.

Abstract: Processing parameters of at least one plate-shaped object, e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool are adjusted depending on which processing device out of at least one set of processing devices has been used for the semiconductor device in a preceding step. A virtual or physical tag is generated, which connects the semiconductor device identification with the processing device identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-units. The amount of compensation is detected and evaluated by metrology tools, which—depending on the sequence of the metrology step relative to the processing step to be adjusted—either feed-forward or feed-backward their results to the processing tool. The yield of semiconductor device production is advantageously increased.

Abstract: An apparatus for compensating light exposure on different, subsequently irradiated target areas (11, 12) in a photosensitive medium (2) on a semiconductor wafer (1). In order to improve exposure dose uniformity the apparatus comprises a mask filter (9) with a plurality of oblong transparent (31) and oblong opaque elements (32; 41) inserted between a light source (3) and said photosensitive medium (2) so that light (4) traverses through said plurality of transparent elements (31) to expose the photosensitive medium. Each of said plurality of oblong opaque elements (32; 41) is rotatable around a longitudinal axis (42) so as to define the area masked by the projection of the opaque element on the photosensitive medium and to continuously adjust a ratio between irradiated and non-irradiated areas on the photosensitive medium.

Abstract: A semiconductor method for reducing charge damage during plasma etch processing is disclosed. Structures (22, 26, 28) for accumulating charge during plasma etch processing are provided on a semiconductor wafer (10), the structures (22, 26, 28) being electrically connected to device structures (30, 32).

Abstract: The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer (12), comprising the steps of: projecting a first laser pulse (14) on a surface (16) of the at least one layer (10), thereby generating an acoustical wave due to heating of the surface of the at least one layer (10); after a propagation time of the acoustical wave, projecting a series of second laser pulses (18) on the surface (16) of the at least one layer (10); measuring reflected laser pulses (20) of the second laser pulses (18), thereby sensing the times of reflection property changes of the surface (16) of the at least one layer (10); and determining the thickness of the at least one layer (10) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer (10) on a semiconductor wafer (12).

Abstract: A metrology and probe chuck (100) holds a flat object (150), such as a semiconductor wafer (150) at the backside (152). The chuck has, supported on a base plate (105), a plurality of pins (110-n) to receive partial forces (Fn) from the backside (152) and a plurality of piezoelectric elements (120-n) attached to the pins to sense the partial forces (Fn) applied from the object (150) to the pins (110-n). The piezoelectric elements (120-n) apply partial displacements (Bn) of the pins (110-n) to act on selected areas of the object (150) and thereby compensate for irregularities in the backside contour.

Abstract: There is disclosed a method for clamping a semiconductor wafer, preferably suitable for a wafer with a diameter of 300 mm or larger. After depositing at least one encapsulating material layer over the front side and backside of the wafer, the material layer over the front side of the wafer is etched selectively to form a predetermined structure in following process steps. Wafer warpage is caused as a result of unequal wafer bowing stress of the material layer. By removing the material layer over the backside of the wafer partially or completely in accordance with the desired reduction of the bowing stress wafer warpage is reduced. In a further course of the manufacturing process, the semiconductor device is clamped electrostatically, physically or by use of vacuum.

Abstract: The invention relates to a method for measuring a required feature of a thin layer (4) used in a polishing process that is carnied out by a polish head by producing a localized temperature rise on the surface of the layer (4) by focusing a short pump laser pulse (11) on the surface of the layer, as to generate a sound wave (13) that propagates into the layer; repeated measuring the surface reflection properties of the layer, by passing a probe laser pulse (21) and focusing it on the surface of the layer and by monitoring the portion of the probe laser pulse that is reflected (22) by the surface, as to detect a change in surface reflection properties caused by a boundary echo (32) that is a reflected part of the sound wave (13); measuring the elapsed time between the generation of the sound wave and the change in surface reflection properties; and calculating the required layer feature.

Abstract: An apparatus for compensating light exposure on different, subsequently irradiated target areas (11, 12) in a photosensitive medium (2) on a semiconductor wafer (1). In order to improve exposure dose uniformity the apparatus comprises a mask filter (9) with a plurality of oblong transparent (31) and oblong opaque elements (32; 41) inserted between a light source (3) and said photosensitive medium (2) so that light (4) traverses through said plurality of transparent elements (31) to expose the photosensitive medium. Each of said plurality of oblong opaque elements (32; 41) is rotatable around a longitudinal axis (42) so as to define the area masked by the projection of the opaque element on the photosensitive medium and to continuously adjust a ratio between irradiated and non-irradiated areas on the photosensitive medium.

Abstract: The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer (12), comprising the steps of: projecting a first laser pulse (14) on a surface (16) of the at least one layer (10), thereby generating an acoustical wave due to heating of the surface of the at least one layer (10); after a propagation time of the acoustical wave, projecting a series of second laser pulses (18) on the surface (16) of the at least one layer (10); measuring reflected laser pulses (20) of the second laser pulses (18), thereby sensing the times of reflection property changes of the surface (16) of the at least one layer (10); and determining the thickness of the at least one layer (10) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer (10) on a semiconductor wafer (12).

Abstract: The present invention is related to a method of monitoring a semiconductor wafer (10) plasma etch process, comprising the steps of projecting light (12) on a wafer surface (14) during plasma etching, so that the light (12) is scattered by the wafer surface (14), detecting the scattered light (16), determining intensities of the detected light with dependence on at least one varying parameter, thereby creating a spectrum, and comparing the spectrum with stored data. The present invention further relates to a system for monitoring a semiconductor wafer plasma etch process.

Abstract: A method of processing a semiconductor wafer (10) is provided. The method comprises the steps of: providing a semiconductor wafer (10) as a semiconductor substrate (12), preprocessing the semiconductor wafer (10) by depositing on the semiconductor wafer (10) at least one additional layer (14, 16), and further processing the preprocessed semiconductor wafer (10). The preprocessing is accomplished in a first factory (18) and the further processing is accomplished in a second factory (20). The present invention is further related to a preprocessed semiconductor wafer (10) an to a system for processing a semiconductor wafer (10).

Abstract: A semiconductor wafer (10), a method of providing information on a semiconductor wafer (10), a system of semiconductor wafer (10) and reading means, and a method of reading information from a semiconductor wafer (10) are provided. The invention is characterized by magnetic means (14) as information carrier and the respective magnetic sensors (26) to read such information.

Abstract: A semiconductor structure and a method for reducing charge damage during plasma etch processing are disclosed. Structures (22, 26, 28) for accumulating charge during plasma etch processing are provided on a semiconductor wafer (10), the structures (22, 26, 28) being electrically connected to device structures (30, 32).

Abstract: The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer (12), comprising the steps of: projecting a first laser pulse (14) on a surface (16) of the at least one layer (10), thereby generating an acoustical wave due to heating of the surface of the at least one layer (10); after a propagation time of the acoustical wave, projecting a series of second laser pulses (18) on the surface (16) of the at least one layer (10); measuring reflected laser pulses (20) of the second laser pulses (18), thereby sensing the times of reflection property changes of the surface (16) of the at least one layer (10); and determining the thickness of the at least one layer (10) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer (10) on a semiconductor wafer (12).