Abstract: Coating compositions that include a halopigment dispersed within a silicon-containing polymeric matrix (e.g., a polysiloxane polymer) are provided. The halopigment comprises a halogenated phthalocyanine (e.g., a fluorinated phthalocyanine) attached to a support particle (e.g., a metal oxide, a non-metal oxide, and/or an inert material). The halogenated phthalocyanine can have the formula: (16R-Pc)nMLo, where each R is, independently, a halogen or a perhaloalkyl group, with each R group being independent from the other groups; Pc is a phthalocyanine compound; 1?n?2; L is a ligand or ligands and M is a cation; and 0?o?8. Methods are also provided for forming such a coating composition and for coating a substrate with the coating composition.

Abstract: Coating compositions that include a halopigment dispersed within a silicon-containing polymeric matrix (e.g., a polysiloxane polymer) are provided. The halopigment comprises a halogenated phthalocyanine (e.g., a fluorinated phthalocyanine) attached to a support particle (e.g., a metal oxide, a non-metal oxide, and/or an inert material). The halogenated phthalocyanine can have the formula: (16R-Pc)nMLo, where each R is, independently, a halogen or a perhaloalkyl group, with each R group being independent from the other groups; Pc is a phthalocyanine compound; 1?n?2; L is a ligand or ligands and M is a cation; and 0?o?8. Methods are also provided for forming such a coating composition and for coating a substrate with the coating composition.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.