Patents by Inventor Kartik Bhupendra SHAH
Kartik Bhupendra SHAH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112931Abstract: The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured for disposition in a substrate processing chamber includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cassette includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes a plurality of levels that include a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls.Type: ApplicationFiled: October 3, 2022Publication date: April 4, 2024Inventors: Vishwas Kumar PANDEY, Kartik Bhupendra SHAH, Ala MORADIAN
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Publication number: 20240026522Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Inventors: Zhepeng CONG, Schubert CHU, Nyi Oo MYO, Kartik Bhupendra SHAH, Zhiyuan YE, Richard O. COLLINS
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Patent number: 11781212Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.Type: GrantFiled: April 7, 2021Date of Patent: October 10, 2023Assignee: Applied Material, Inc.Inventors: Zhepeng Cong, Schubert Chu, Nyi Oo Myo, Kartik Bhupendra Shah, Zhiyuan Ye, Richard O. Collins
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Publication number: 20230230859Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.Type: ApplicationFiled: July 12, 2021Publication date: July 20, 2023Inventors: Adel George TANNOUS, Schubert S. CHU, Shu-Kwan LAU, Kartik Bhupendra SHAH, Zuoming ZHU, Ala MORADIAN, Surajit KUMAR, Srinivasa RANGAPPA, Chia Cheng CHIN, Vishwas Kumar PANDEY
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Publication number: 20230167581Abstract: A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.Type: ApplicationFiled: July 16, 2021Publication date: June 1, 2023Inventors: Kartik Bhupendra SHAH, Schubert S. CHU, Adel George TANNOUS, Ala MORADIAN, Nyi Oo MYO, Surajit KUMAR, Zuoming ZHU, Brian Hayes BURROWS, Vishwas Kumar PANDEY, Shu-Kwan LAU, Srinivasa RANGAPPA
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Publication number: 20230133402Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.Type: ApplicationFiled: October 18, 2022Publication date: May 4, 2023Inventors: Christopher S. OLSEN, Kartik Bhupendra SHAH, Chaitanya Anjaneyalu PRASAD, Vishwas Kumar PANDEY, AnilKumar BODEPUDI, Erika HANSEN
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Publication number: 20230128611Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.Type: ApplicationFiled: October 22, 2021Publication date: April 27, 2023Inventors: Vishwas Kumar PANDEY, Colin John DICKINSON, Dinkesh HUDERI SOMANNA, Ala MORADIAN, Kartik Bhupendra SHAH
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Publication number: 20220364231Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.Type: ApplicationFiled: May 11, 2021Publication date: November 17, 2022Inventors: Tetsuya ISHIKAWA, Swaminathan T. SRINIVASAN, Matthias BAUER, Ala MORADIAN, Manjunath SUBBANNA, Kartik Bhupendra SHAH, Errol Antonio C. SANCHEZ, Sohrab ZOKAEI, Michael R. RICE, Peter REIMER
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Publication number: 20220364229Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.Type: ApplicationFiled: May 11, 2021Publication date: November 17, 2022Inventors: Tetsuya ISHIKAWA, Swaminathan T. SRINIVASAN, Matthias BAUER, Manjunath SUBBANNA, Ala MORADIAN, Kartik Bhupendra SHAH, Errol Antonio C SANCHEZ, Michael R. RICE, Peter REIMER, Marc SHULL
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Publication number: 20220364261Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.Type: ApplicationFiled: May 11, 2021Publication date: November 17, 2022Inventors: Tetsuya ISHIKAWA, Swaminathan T. SRINIVASAN, Kartik Bhupendra SHAH, Ala MORADIAN, Manjunath SUBBANNA, Matthias BAUER, Peter REIMER, Michael R. RICE
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Publication number: 20220367216Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.Type: ApplicationFiled: May 11, 2021Publication date: November 17, 2022Inventors: Tetsuya ISHIKAWA, Swaminathan T. SRINIVASAN, Matthias BAUER, Ala MORADIAN, Manjunath SUBBANNA, Kartik Bhupendra SHAH, Kostiantyn ACHKASOV, Errol Antonio C. SANCHEZ, Michael R. RICE, Marc SHULL, Ji-Dih HU
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Publication number: 20220322492Abstract: A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.Type: ApplicationFiled: April 6, 2021Publication date: October 6, 2022Inventors: Shu-Kwan LAU, Brian Hayes BURROWS, Zhiyuan YE, Richard O. COLLINS, Enle CHOO, Danny D. WANG, Shainish NELLIKKA, Toshiyuki NAKAGAWA, Abhishek DUBE, Ala MORADIAN, Kartik Bhupendra SHAH
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Publication number: 20220165547Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Erika HANSEN, Rene GEORGE, Lara HAWRYLCHAK, Hansel LO, Kartik Bhupendra SHAH
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Publication number: 20210272776Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Inventors: Vishwas Kumar PANDEY, Kartik Bhupendra SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Hansel LO, Eric Kihara SHONO, Hemantha RAJU
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Patent number: D959490Type: GrantFiled: October 7, 2020Date of Patent: August 2, 2022Assignee: Applied Materials, Inc.Inventors: Kartik Bhupendra Shah, Kartik Santhanam, Bindusagar Marath Sankarathodi, Abhilash J. Mayur, Dayal Ramachandran, Amritha Rammohan, Stephen Moffatt, Eugene Lobanov