Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation.

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior volume and comprising an access port for inserting a substrate into the interior volume; a cathode assembly configured to generate a plasma within the interior volume; and a chamber liner comprising a smooth interior surface that is radially symmetric about a vertical axis of the chamber body. The chamber liner is configured to move between a loading position and an operation position.

Abstract: Methods for forming a high current inductor leverage solid core materials to form ribbon inductors. In some embodiments, the method may include forming a central opening lengthwise through a solid core conductive material, wherein the solid core conductive material has an outer diameter, the central opening forms an inner diameter of the solid core conductive material, and a difference between the outer diameter and the inner diameter is a thickness of a ribbon conductor of the high current inductor and removing a spiral portion of the solid core conductive material to form the ribbon conductor of the high current inductor, wherein a width of the spiral portion forms a gap spacing between windings of the ribbon conductor.

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

Abstract: Methods and apparatus for preventing or reducing arcing of an electrostatic chuck in a process chamber. In some embodiments, a method of preventing or reducing arcing of an electrostatic chuck includes forming a first recess in at least a portion of a sidewall of the electrostatic chuck and filling the first recess with a conformable dielectric material that remains conformable (elastic) over a temperature range of at least approximately zero degrees Celsius to approximately 80 degrees Celsius. In some embodiments, the first recess is filled with the conformable dielectric material such that the conformable dielectric material does not bond to at least one surface of the first recess. The conformable dielectric material may also be used to fill a second recess in a dielectric sleeve adjacent to the electrostatic chuck.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

Abstract: Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

Abstract: Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a third variable capacitor connected in parallel with each of the first variable capacitor and the second variable capacitor and in series with a transistor switch, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a MEMS array comprising a plurality of variable capacitors connected in series with the first variable capacitor, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.