Abstract: An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.

Abstract: A dual-band MMIC power amplifier and method of operation to amplify frequencies in different RF bands while only requiring input drive signals at frequencies f1 and f2 in a narrow RF input band. This allows for the use of a conventional narrowband RF IC to drive the MMIC and does not require additional circuitry (e.g., a LO) on the MMIC power amplifier. The matching network of the last amplification stage is modified to pass f1 (or a harmonic thereof), reflect f2, pass a Pth harmonic of f2 where P is 2 or 3 and to reflect any unused 1st, 2nd or 3rd order harmonics of f1 or f2 back into the MMIC. In response to an input signal at f1, the MMIC power amplifier amplifies and outputs a signal at f1 (or a harmonic thereof). In response to an input signal at f2 at sufficient RF power, the last amplification stage operates in compression such that the MMIC power amplifier generates the harmonics, selects the Pth harmonic and outputs an amplified RF signal at P*f2.

Abstract: A power sensor having a microstrip transmission line, comprising: a dielectric substrate; a strip conductor disposed on one surface of the substrate; and a ground plane conductor disposed on an opposite surface of the substrate. The power sensor includes a plurality of thermocouples extending from the strip conductor, proximal end portions of the thermocouples being thermally coupled to the strip conductor. A plurality of electrical conductors is provided, each one having a first end electrically connected to a distal end of a corresponding one of the thermocouples and a second end electrically connected to the proximate end of one of the plurality of thermocouples disposed adjacent to such corresponding one of the thermocouples. The proximal ends of the thermocouples are electrically insulated one from the other.

Abstract: A reflect antenna element having a receive antenna section and a transmit antenna section. Each section has a cavity, a conductive element in registration with the cavity, and a ground plane conductor having a slot. A strip conductor has portions thereof disposed over the slots and the ground planes conductor. The strip conductor and underlying ground plane conductor form a microstrip transmission line for coupling energy received by the receive antenna section to the transmit antenna section. The transmit antenna section and receive antenna section are configured to operate with orthogonal polarizations. An amplifier is disposed in circuit with the transmission line.

Abstract: A circuit for sensing radio frequency energy. The circuit includes a Wheatstone bridge having at least one element thereof thermally responsive to the radio frequency energy passing therethough differently from radio frequency energy passing though at least one other element of the bridge.

Abstract: An RF micro-electro-mechanical system including a first silicon wafer having a top surface and a bottom surface. The top surface being opposite the bottom surface. A bore extends through the first silicon wafer. A micro-electro-mechanical device is provided and coupled to the top surface of the first silicon wafer. An electrical feed line then extends along the bottom surface of the first silicon wafer and an electrical interconnect electrically couples the micro-electro-mechanical device and the electrical feed line through the bore.

Abstract: An RF micro-electro-mechanical system including a first silicon wafer having a top surface and a bottom surface. The top surface being opposite the bottom surface. A bore extends through the first silicon wafer. A micro-electro-mechanical device is provided and coupled to the top surface of the first silicon wafer. An electrical feed line then extends along the bottom surface of the first silicon wafer and an electrical interconnect electrically couples the micro-electro-mechanical device and the electrical feed line through the bore.