Abstract: LGA connectors are fabricated with buttons or spring contacts preformed to different heights to accommodate the initial topography of a typical module or PCB of a particular product type. This is accomplished during fabrication by measuring topographies of mating surfaces of a first electronic device and of a second electronic device; fabricating interposer contacts to form opposing non-planar sides having respective inverse topographies for contacting the mating surfaces; and sandwiching the interposer between the first and second electronic devices with the opposing sides in contact with respective mating surfaces.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: LGA connectors are fabricated with buttons or spring contacts preformed to different heights to accommodate the initial topography of a typical module or PCB of a particular product type. This is accomplished during fabrication by measuring topographies of mating surfaces of a first electronic device and of a second electronic device; fabricating interposer contacts to form opposing non-planar sides having respective inverse topographies for contacting the mating surfaces; and sandwiching the interposer between the first and second electronic devices with the opposing sides in contact with respective mating surfaces. For those LGA types made by molding techniques such as the metal-in-polymer type (eg. Tyco Electronics MPI, or Shin Etsu RP) or the Metal-on-Elastomer type (IBM), using molds with the desired topography provides the desired LGA topography.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.