Abstract: Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.

Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

Abstract: Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.

Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

Abstract: An inline processing system for patterning magnetic recording layers on hard discs for use in a hard disc drive. Discs are processed on both sides simultaneously in a vertical orientation, in round plate-like holders called MDCs. A plurality (as many as 10) discs are held in a dial carrier of the MDC, and transferred from one process station to another. The dial carrier of the MDC may be rotated and/or angled at up to 70° from normal in each process station, so that one or a plurality of process sources may treat the discs simultaneously. This configuration provides time savings and a reduction in the number and size of process sources needed. A mask enhancement process for patterning of magnetic media, and a filling and planarizing process used therewith, are also disclosed.

Abstract: A first layer of magnetic material is deposited onto a substrate to form a bottom pole of an inductive transducer. A second layer of magnetic material is plated on the first layer of magnetic material within the pole tip region to form a bottom pole extension. A layer of non-magnetic metal is then plated on the bottom pole extension to form the gap. A third layer of magnetic material is then plated on the gap layer to form the top pole extension. In one form of the invention, a mask is employed to define a good zero throat level surface to the pole tip region.