Abstract: A solid-state imaging device (200) includes a photoelectric conversion device (211), a current-voltage conversion circuit (310), and an output circuit. The photoelectric conversion device (211) performs photoelectric conversion of incident light. The current-voltage conversion circuit (310) includes a first transistor (311) that converts an amount of electric charge generated by photoelectric conversion into a voltage signal. The output circuit includes a second transistor having an S value smaller than an S value of the first transistor (311) and generates an output signal based on the voltage signal.

Abstract: An imaging device according to an embodiment of the present disclosure includes a first substrate on which a pixel array unit that outputs a pixel signal obtained by photoelectrically converting incident light in a first direction is arranged, and a second substrate on which a memory array unit that outputs a convolution signal indicating a result of a product-sum operation of an input signal based on the pixel signal in a second direction is arranged. The first substrate and the second substrate at least partially overlap each other.

Abstract: A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

Abstract: A signal processing device includes a multiply-accumulate operation unit arranged in a one-dimensional or two-dimensional array and capable of performing a multiply-accumulate operation in a neural network, a threshold determination processing unit that determines whether or not the input data used for operation by the multiply-accumulate operation unit is less than a predetermined threshold, and an avoidance processing unit that avoids multiply-accumulate operation processing for the input data in a case where the input data is less than the predetermined threshold.

Abstract: The present disclosure provides an imaging device that can be further downsized and an imaging method. According to the present disclosure, an imaging device includes a pixel array section including a plurality of dynamic vision sensor (DVS) pixels that outputs a luminance signal according to a light amount, and a detection circuit section that is disposed outside the pixel array section and outputs a detection signal indicating occurrence of an address event in a case where the luminance signal of each of the plurality of DVS pixels exceeds a predetermined threshold value, in which the DVS pixel includes a photoelectric conversion element that outputs a signal corresponding to a light amount, a logarithmic conversion circuit that logarithmically converts the signal, a signal holding circuit that holds the luminance signal converted by the logarithmic conversion circuit, and a readout circuit that reads the luminance signal held in the signal holding circuit.

Abstract: Imaging elements are disclosed. In one example, first and second photoelectric conversion units perform photoelectric conversion of incident light from an object. A first electric charge transfer unit transfers the electric charges generated by the first photoelectric conversion unit to a first electric charge holding unit. A second electric charge transfer unit transfers the electric charges generated by the first photoelectric conversion unit to a second electric charge holding unit. A third electric charge transfer unit transfers the electric charges generated by the second photoelectric conversion unit to the first electric charge holding unit. A fourth electric charge transfer unit transfers the electric charges generated by the second photoelectric conversion unit to the second electric charge holding unit. Image signals are generated based on the electric charges held in the first and second electric charge holding units.

Abstract: A solid-state imaging device includes a plurality of pixel regions. Each of the plurality of pixel regions includes a first photoelectric conversion unit and a second photoelectric conversion unit. The second photoelectric conversion unit overlaps the first photoelectric conversion unit when viewed in a light incident direction. At least one of the first photoelectric conversion unit and the second photoelectric conversion unit is an embedded unit. The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to mutually different types of readout circuits.

Abstract: In a solid-state imaging element that measures a distance, a circuit scale is reduced. The solid-state imaging element includes a pulse signal generation section and an up-down counter. The pulse signal generation section is provided with an avalanche photodiode that converts incident light including reflected light of irradiation light radiated during a predetermined light-on period into a photocurrent and multiplies the photocurrent and a quench circuit that generates a pulse signal on the basis of the multiplied photocurrent. The up-down counter performs one of up counting and down counting each time the pulse signal is generated during the light-on period, and performs another of the up counting and the down counting each time the pulse signal is generated during a light-off period that does not correspond to the light-on period.

Abstract: In a sensing device that retains a code indicating access destinations, a data amount of the code is reduced. In a pixel array unit, a plurality of areas each include a predetermined number of pixels are arrayed. A reference access code retention unit retains a reference access code for designating, as access destinations, some of the pixels in a specific area among the plurality of areas. A non-reference access code generation unit generates a non-reference access code for designating, as access destinations, the pixels in an area which does not correspond to the specific areas among the plurality of areas from the reference access code. A signal processing unit generates pixel data of pixels designated with the reference access code and the non-reference access code.

Abstract: A sensing device that detects whether an edge is present or absent achieves improved accuracy in detection of an edge. The sensing device includes a level control circuit, a comparison circuit, and an edge determination circuit. In this sensing device, the level control circuit amplifies or attenuates the signal level of one of a pair of pixel signals by a predetermined gain. The comparison circuit compares the pair of pixel signals with the signal level of the one pixel signal amplified or attenuated with each other, and outputs a result of the comparison. The edge determination circuit determines whether an edge is present or absent in reference to the comparison result.

Abstract: An imaging apparatus according to the present technology includes a mode control unit. The mode control unit shifts, when a motion is detected on a motion detection mode to detect the motion on the basis of image information, the mode to a feature detection mode to detect features on the basis of image information having a higher resolution than a resolution of the image information that is used for the motion detection, and shifts, when a specific feature is detected on the feature detection mode, the mode to an imaging mode to acquire image information having a higher resolution than the resolution of the image information that is used for the feature detection.

Abstract: An object recognition system according to an embodiment of the present disclosure includes an event detection sensor that detects, as an event, that a change in luminance of a pixel has exceeded a predetermined threshold, and a spiking neural network. The spiking neural network executes recognition processing on an object to be recognized on a basis of a result of the detection by the event detection sensor.

Abstract: A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

Abstract: To provide an imaging circuit and an imaging device capable of achieving switching of output types while a circuit scale is reduced. An imaging circuit according to the present disclosure includes: a photoelectric conversion element that converts incident light into a photocurrent; a first transistor that converts the photocurrent into a voltage signal; a second transistor that amplifies the voltage signal; a third transistor that controls a current to be supplied to the first transistor; and a fourth transistor that is connected to the second transistor.

Abstract: A system for capturing image data measures a distance to an object without adding a distance measuring sensor. The sensing system includes a light emitting section, a predetermined number of pixels, and a counting section. In this solid-state imaging element, the light emitting section emits irradiation light in synchronization with a light emission control signal having a higher frequency than a predetermined vertical synchronization signal. Furthermore, each of the predetermined number of pixels generates a pulse signal by photoelectric conversion. Furthermore, the counting section counts the number of the pulse signals in synchronization with each of the light emission control signal and the vertical synchronization signal.

Abstract: The present disclosure relates to an imaging circuit and an imaging device capable of performing reading at high speed while reducing a circuit scale. An imaging circuit according to the present disclosure includes a plurality of circuit blocks each including a photoelectric conversion element configured to photoelectrically convert incident light to generate a photocurrent and a current-voltage conversion circuit configured to convert the photocurrent into a voltage signal, a quantizer configured to generate a detection signal of an address event in accordance with a result of comparing the voltage signal supplied from at least one of the plurality of circuit blocks with a threshold, a demultiplexer connected to a subsequent stage of the quantizer, and a plurality of latch circuits connected to different output terminals of the demultiplexer.

Abstract: A sensing device that detects whether an edge is present or absent achieves improved accuracy in detection of an edge. The sensing device includes a level control circuit, a comparison circuit, and an edge determination circuit. In this sensing device, the level control circuit amplifies or attenuates the signal level of one of a pair of pixel signals by a predetermined gain. The comparison circuit compares the pair of pixel signals with the signal level of the one pixel signal amplified or attenuated with each other, and outputs a result of the comparison. The edge determination circuit determines whether an edge is present or absent in reference to the comparison result.

Abstract: A pixel circuit, a method for performing a pixel-level background light subtraction, and an imaging device are disclosed. In one example of the present disclosure, the pixel circuit includes an overflow gate transistor, a photodiode, and two taps. Each tap of the two taps is configured to store a background signal that is integrated by the photodiode, subtract the background signal from a floating diffusion, store a combined signal that is integrated by the photodiode at the floating diffusion, and generate a demodulated signal based on a subtraction of the background signal from the floating diffusion and a storage of the combined signal that is integrated at the floating diffusion.

Abstract: [Object] To execute online calibration without using a light source. [Solution] An image sensor includes: a pixel array portion in which a plurality of pixels are disposed and which generates a pixel signal; a reference signal generation unit configured to generate a reference signal for calibration; an analog digital (AD) conversion unit configured to execute AD conversion on the pixel signal and the reference signal to generate pixel data and reference data; and a correction processing unit configured to correct the pixel data on a basis of the reference data. The present technology can be applied to, for example, an image sensor performing online calibration.

Abstract: A pixel circuit, a method for performing a pixel-level background light subtraction, and an imaging device are disclosed. In one example of the present disclosure, the pixel circuit includes an overflow gate transistor, a photodiode, and two taps. Each tap of the two taps is configured to store a background signal that is integrated by the photodiode, subtract the background signal from a floating diffusion, store a combined signal that is integrated by the photodiode at the floating diffusion, and generate a demodulated signal based on a subtraction of the background signal from the floating diffusion and a storage of the combined signal that is integrated at the floating diffusion.