Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Abstract: A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Abstract: A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

Abstract: A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas.

Abstract: A disclosed substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Abstract: An electrostatic chuck is provided for a substrate stage that can be used in plasma treatment of various substrates such as a large-sized glass substrate for a flat panel display (FPD), a semiconductor wafer or the like. The electrostatic chuck is divided into a plurality of electrodes formed into nearly bar-like shapes. In accordance with an exemplary embodiment, each of the divided bar-like electrodes includes an inner electrode and a single layer thermally sprayed film formed on the surface of the inner electrode, with the bar-like electrodes disposed in parallel so as to form a plane electrode.

Abstract: Processing chambers (3A-3F) for applying a process to a substrate W housed therein are provided at a periphery of a conveying chamber 2. A conveying case (4) houses the substrate (W) in a state isolated from an outside atmosphere. The conveyance case (4) has a gate valve (30) and a transfer mechanism (22). A conveying mechanism (5) supports the conveyance case 4, and carries the conveyance case (4) to a position for conveying in/conveying out a substrate. The number of processing chambers connectable to a conveying chamber is not limited, and conveyance to the processing chamber can be executed while maintaining a predetermined ambience for an atmosphere of a substrate that is to be processed.

Abstract: A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

Abstract: A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

Abstract: A substrate processing system including a processing section for processing a substrate; a carry-in/out section for carrying in/out the substrate; and a load lock section provided between the processing section and the carry-in/out section, is characterized in that the load lock section includes a first load lock apparatus including a carry-in port provided on a side of the carry-in/out section for carrying in/out the substrate, a carry-out port provided on a side of the processing section for processing the substrate, and supporting members for supporting the substrate; and a second load lock apparatus including a carry-out port provided on the carry-in/out section side, a carry-in port provided on the processing section side, and supporting members for supporting the substrate, that the second load lock apparatus includes a first cooling plate and a second cooling plate each for cooling the substrate supported on the supporting members, and that one of the first cooling plate and the second cooling plate is

Abstract: A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

Abstract: An electrostatic chuck is provided for a substrate stage that can be used in plasma treatment of various substrates such as a large-sized glass substrate for a flat panel display (FPD), a semiconductor wafer or the like. The electrostatic chuck is divided into a plurality of electrodes formed into nearly bar-like shapes. In accordance with an exemplary embodiment, each of the divided bar-like electrodes includes an inner electrode and a single layer thermally sprayed film formed on the surface of the inner electrode, with the bar-like electrodes disposed in parallel so as to form a plane electrode.

Abstract: A treating apparatus for spreading treatment gas uniformly all over a to-be-treated substrate mounted on a substrate mount while controlling the heat transfer rate between the substrate and the substrate mount to thereby uniformize the temperature of the to-be-treated substrate over the whole surface thereof. A porous substrate having a large number of communicating pores serves as the mount for treating the to-be-treated substrate mounted on the substrate mount disposed in a vacuum vessel while controlling the temperature of the to-be-treated substrate into a predetermined temperature. In the porous substrate, a large number of communicating pores are formed in a substrate to communicate with one another in all directions. The treatment gas diffuses uniformly from below through the communicating pores and spouts upward. An electrostatically chucking electrode is buried in a gas-permeable insulating film. The porous substrate is peripherally coated with a heat resistant insulating film of ceramics etc.

Abstract: Processing chambers (3A-3F) for applying a process to a substrate W housed therein are provided at a periphery of a conveying chamber 2. A conveying case (4) houses the substrate (W) in a state isolated from an outside atmosphere. The conveyance case (4) has a gate valve (30) and a transfer mechanism (22). A conveying mechanism (5) supports the conveyance case 4, and carries the conveyance case (4) to a position for conveying in/conveying out a substrate. The number of processing chambers connectable to a conveying chamber is not limited, and conveyance to the processing chamber can be executed while maintaining a predetermined ambience for an atmosphere of a substrate that is to be processed.

Abstract: A plasma processing apparatus, comprising: at least, a processing chamber for plasma-processing an object to be processed; gas supply means for supplying a gas into the processing chamber; and high-frequency supplying means for forming the gas into a plasma state. The gas supply means has at least one gas introduction pipe, and the tip of the gas introduction pipe is placed in a position in the processing chamber, which is capable of preferred control of the gas dissociation. There are provided a plasma processing apparatus and a plasma processing method which can improve the uniformity in the gas which has been supplied into the processing chamber.

Abstract: In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

Abstract: In a vacuum processing apparatus for a semiconductor wafer, a first dielectric plate 4 is provided over an O-ring 32 on an upper surface of a main mounting stand unit 31, in which is embedded a coolant passageway 34, the upper surface thereof is configured as an electrostatic chuck, and a second dielectric plate 5 in which is embedded a heater 53 is provided thereon. Recesses and projections are machined into the surface of the first dielectric plate 4 so that crevices are formed between the resultant indentations 41 and the second dielectric plate 5. During the formation of an SiOF film, the heat from the heater 53 is not conducted through these crevices in a vacuum environment, so that the thermal conductivity between the second dielectric plate 5 and the first dielectric plate 4 is reduced and thus the temperature gradient therebetween is increased. Since the rear surface side of the first dielectric plate 4 is at no more than 200.degree. C., the O-ring is not subjected to a high temperature.

Abstract: The present invention refers to a wafer transfer robot for a wafer boat of a wafer processing apparatus wherein a turntable within a chamber of a turntable apparatus is provided with a prescribed number of stations formed thereon. Each of the stations is provided with protrusions that hold a wafer cassette that is transferred thereto and orientated thereon in such a manner that a base surface thereof is inclined at an angle to the outward direction. Although, while the wafer cassette is being transferred and orientated, it is transferred and orientated reliably with the base surface thereof held horizontal by an elevator apparatus. By providing a loadlock chamber of a rotational configuration, the apparatus of the present invention ensures good sealing, and also ensures that when regions within the apparatus are being evacuated or being filled with an inert gas, they are kept reliably airtight.

Abstract: The processing apparatus of the present invention comprises a processing chamber for providing a predetermined processing to a processing object, a transfer chamber having transfer arm for transferring a holding member holding the processing object to/from the processing chamber, inactive gas supply and exhaust pipe for maintaining the inside of the transfer chamber to be in a predetermined inactive gas atmosphere, a holding member containing chamber, provided adjacent to the transfer chamber, having a capacity being capable of containing at least the holding member, and being capable of transferring the holding member to/from the transfer chamber in a state that an atmosphere of the transfer chamber is isolated from outside air, inside atmosphere substituting control for providing substitution so as to set the inside of the holding member containing chamber to be in a vacuum atmosphere or a predetermined inactive gas atmosphere, and an processing object transfer chamber, provided to be adjacent to the holdin