Abstract: A micro-LED ultraviolet radiation source of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This ?LED ultraviolet radiation source includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. The substrate, the frontplane, the middle layer and the backplane are divided into a plurality of light-emitting device units, and the plurality of light-emitting device units are supported by a flexible film.

Abstract: This organic-EL display apparatus comprises: a substrate with a drive circuit comprising a thin-film transistor (TFT), a planarizing layer to cover the drive circuit, and an organic light-emitting element formed upon the surface of the planarizing layer facing the opposite direction from the drive circuit. The surface of the planarizing layer has an arithmetic average roughness of 50 nm or less. The TFT comprises a drain electrode, a source electrode, and a semiconductor layer that includes regions to be a channel of TFT and partially overlaps with the source and drain electrodes. Respective parts of a first conductor layer forming the drain electrode and a second conductor layer forming the source electrode are arranged in an alternating manner along a prescribed direction, and the region to be the channel is sandwiched between the part of the first conductor layer and the part of the second conductor layer.

Abstract: A method for producing an organic electroluminescent device, includes the steps of forming the thin film encapsulation structure including: step A of forming a first inorganic barrier layer, step B of, after step A, detecting particles located below or above the first inorganic barrier layer and each having an area-equivalent diameter of 0.

Abstract: A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over an upper surface of the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.

Abstract: A vapor deposition mask (100) includes a resin layer (10) including a plurality of openings (11); a magnetic metal layer (20) located so as to overlap the resin layer, the magnetic metal layer including a mask portion (20a) having such a shape as to expose the plurality of openings and a peripheral portion (20b) located so as to enclose the mask portion; and a frame (30) secured to the peripheral portion of the magnetic metal layer. The resin layer is not joined to the mask portion of the magnetic metal layer but is joined to at least a part of the peripheral portion of the magnetic metal layer.

Abstract: A method for manufacturing a vapor deposition mask including a resin layer, and a magnetic metal body formed on the resin layer, the method including the steps of: (A) providing a magnetic metal body having at least one first opening; (B) providing a substrate; (C) forming a resin layer by applying a solution including a resin material or a varnish of a resin material on a surface of a substrate, and then performing a heat treatment thereon; (D) securing the resin layer formed on the substrate on the magnetic metal body so as to cover the at least one first opening; (E) forming a plurality of second openings in a region of the resin layer that is located in the at least one first opening of the magnetic metal body; and (F) after the step (E), removing the substrate from the resin layer.

Abstract: A method for manufacturing a deposition mask having a plurality of openings arranged in a matrix pattern in an active region formation portion of a mask base, which is fixed to a frame while being tensioned, the method including: a step A of preparing a mask base of an initial state fixed to a frame while being tensioned in a predetermined condition so as to define an xy plane; a step B of preparing target coordinate data that identifies a position of each of the plurality of openings in the xy plane; a step C of predicting, for each of the plurality of openings, an amount of displacement from the target coordinate data caused by the formation of the openings to generate such correction data that reduces the amount of displacement; and a step D of forming each of the plurality of openings at a position that is identified based on the target coordinate data and the correction data, wherein: in the step C, the correction data for each of the plurality of openings is associated with an order in which the plurali

Abstract: A micro-LED device of the present disclosure includes a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. This device further includes a supporting substrate (500) secured to at least one of the backplane and the frontplane.

Abstract: A correction image generating system comprises: an electronic apparatus main body comprising a display portion, a storage portion having stored therein reference image data, a correction data generating portion to generate correction data based on an image displayed in the display portion and reference image data, and an image data correcting portion to correct image data using the correction data; and an imaging portion to obtain imaged image data by imaging a reference image displayed using the reference image data. The correction data generating portion generates the correction data based on a comparison result between the imaged image data or data based on the imaged image data, and the reference image data or data based on the reference image data.

Abstract: In the present embodiment, a sealing agent (50) sealing two substates contains a low melting-point glass material and is adhered to each of a first substrate (10) and a second substrate (20), a barrier rib (60), which is formed in such a manner as to surround the outer periphery of an electronic element (30), is disposed between the sealing agent (50) and the electronic element (30), and between the first substrate (10) and the second substrate (20), and the sealing agent (50) is spaced apart from the barrier rib (60). As a result, a deterioration of the electronic element, caused by the heat produced when sealing, may be prevented while the electronic element formed between the two substrates is protected from moisture and oxygen.

Abstract: According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: A correction image generating system comprises a main body of an electronic apparatus, which main body comprises a display portion, a storage portion having stored therein reference image data, a correction data generating portion to generate correction data using a reference image displayed in the display portion, and an image data correcting portion to correct image data using the correction data; and an imaging portion to obtain imaged image data by imaging the reference image. The display portion displays the reference image based on modified reference image data in which the reference image data is corrected by initial correction data generated in a manufacturing phase of the electronic apparatus; and the correction data generating portion generates the correction data based on a comparison result between the imaged image data or data based on the imaged image data, and the reference image data or data based on the reference image data.

Abstract: A flexible emitting light device production apparatus of the present disclosure includes: a stage (520) for supporting a flexible emitting light supporting substrate (10), the flexible display supporting substrate including a glass base (11) and a synthetic resin film (12) provided on the glass base; a polisher head (535) configured to approach a selected region of a surface (12s) of the synthetic resin film (12) and polish the region so that a polish recess (12e) is formed in the surface (12s); and a repair head (536) for supplying a liquid material (20a) to the polish recess (12c) formed in the surface (12s) of the synthetic resin film (12) and heating the liquid material (20a), thereby forming a sintered layer (20) from the liquid material (20a).

Abstract: A micro-LED device of the present disclosure includes a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. This device further includes a supporting substrate (500) secured to at least one of the backplane and the frontplane.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. The device isolation region includes a reflector (260) capable of reflecting light radiated from each of the plurality of micro-LEDs such that the reflected light travels toward one or both of the crystal growth substrate and the backplane.

Abstract: A method for manufacturing a vapor deposition mask including a resin layer, and a magnetic metal body formed on the resin layer, the method including the steps of: (A) providing a magnetic metal body having at least one first opening; (B) providing a substrate; (C) forming a resin layer by applying a solution including a resin material or a varnish of a resin material on a surface of a substrate, and then performing a heat treatment thereon; (D) securing the resin layer formed on the substrate on the magnetic metal body so as to cover the at least one first opening; (E) forming a plurality of second openings in a region of the resin layer that is located in the at least one first opening of the magnetic metal body; and (F) after the step (E), removing the substrate from the resin layer.

Abstract: A correction image generating system comprises: a main body of an electronic apparatus, which main body comprises a display portion, a storage portion, a correction data generating portion, and an image data correcting portion; and an imaging portion. The predetermined image data is modified reference image data in which a reference image data is corrected by initial correction data generated in a manufacturing phase of the electronic apparatus; the display portion displays the reference image based on the modified reference image data; and the correction data generating portion generates the correction data based on a comparison result between the imaged image data or data based on the imaged image data, and the modified reference image data or data based on the modified reference image data.

Abstract: A method for manufacturing a vapor deposition mask including a resin layer, and a magnetic metal layer formed on the resin layer, the method including the steps of: providing a substrate; forming a resin layer by applying a solution including a resin material or a precursor solution of a resin material on a surface of the substrate, and then performing a heat treatment thereon; forming a magnetic metal layer on the resin layer, mask portion including a solid portion where a metal film is present and a hollow portion where the metal film is absent; forming a plurality of openings in a region of the resin layer that is located in the hollow portion of the mask portion; and removing the resin layer from the substrate after forming a plurality of openings in a region of the resin layer.

Abstract: A line beam irradiation apparatus (1000) includes a work stage (200), a line beam source (100) for irradiating a work (300) placed on the work stage (200) with a line beam; and a transporting device (250) for moving at least one of the work stage (200) and the line beam source (100) such that an irradiation position of the line beam on the work moves in a direction transverse to the line beam. The line beam source includes a plurality of semiconductor laser devices and a support for supporting the plurality of semiconductor laser devices. The plurality of semiconductor laser devices are arranged along a same line extending in a fast axis direction, and the laser light emitted from emission regions of respective ones of the semiconductor laser devices diverge parallel to the same line to form the line beam.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer.