Abstract: A semiconductor device includes, for example: an internal power supply that generates VREG from VIN; a circuit block that operates from VREG; a circuit block that operates from a node voltage Vn appearing at an internal node n1; and a switcher that switches the connection destination of the internal node n1. The switcher includes: a switch SW1 connected between an application terminal for VREG and the internal node n1; and a switch SW2 connected between an external terminal PAD and the internal node n1. The circuit block includes a switch controller configured to control the switches SW1 and SW2. The switch controller controls the switcher such that switching between a first state (SW1 on, SW2 off) and a second state (SW1 off, SW2 on) proceeds via a third state (SW1 on, SW2 on).

Abstract: To prevent the occurrence of short circuit or abnormality of wiring resistance values, a semiconductor wafer is subjected to nitrogen plasma treatment after one of the following steps is over; a step of providing a resist pattern on an inter-layer insulation film and then dry-etching the inter-layer insulation film, and a step of dry-etching a stressor SiN film after the resist pattern is removed.

Abstract: The objective of the present invention is to prevent the variation in an ashing rate according to a temporal change within an ashing chamber. Then, in order to maintain the ashing rate, the decrease in the number of oxygen atoms in ashing gas within a process chamber 101 is indirectly monitored, and ashing gas, which is equivalent to the decreased number of oxygen atoms, is supplied. As a means to indirectly monitor this decrease amount, the valve travel of an APC valve 130 is monitored, and the decreased ashing gas is estimated, and the ashing gas is supplied.

Abstract: The objective of the present invention is to prevent the variation in an ashing rate according to a temporal change within an ashing chamber. Then, in order to maintain the ashing rate, the decrease in the number of oxygen atoms in ashing gas within a process chamber 101 is indirectly monitored, and ashing gas, which is equivalent to the decreased number of oxygen atoms, is supplied. As a means to indirectly monitor this decrease amount, the valve travel of an APC valve 130 is monitored, and the decreased ashing gas is estimated, and the ashing gas is supplied.

Abstract: The plasma processing apparatus relating to the present invention is provided with a process chamber, a pressure measuring unit for measuring the pressure inside of the process chamber and a pump for exhausting a gas in the process chamber. A pressure control valve for maintaining the pressure inside of the process chamber to a predetermined pressure by regulating an opening based on a measured value of the pressure measuring unit is provided between the pump and the process chamber. An exhaust capacity controller sets up the exhaust capacity in a state that the variation of the opening of the pressure control valve in response to the pressure fluctuation inside of the process chamber is large. A computing unit detects very small pressure fluctuation based on the variation of the opening of the pressure control valve. In results, enabling reliable detection of a very small gas flow fluctuation and pressure fluctuation by a less expensive method independent of process conditions.

Abstract: When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposit gas supply system. By this, the deposit component is actively deposited on the inner surface of a wafer processing chamber so as to protect the inner face of the wafer processing chamber from plasma. As a result, damage of the wafer processing chamber during ashing and particle generation due to the damage are prevented.

Abstract: When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposit gas supply system. By this, the deposit component is actively deposited on the inner surface of a wafer processing chamber so as to protect the inner face of the wafer processing chamber from plasma. As a result, damage of the wafer processing chamber during ashing and particle generation due to the damage are prevented.