Patents by Inventor Katsuhiko Takeuchi
Katsuhiko Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140335800Abstract: A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.Type: ApplicationFiled: May 2, 2014Publication date: November 13, 2014Applicant: Sony CorporationInventors: Katsuhiko Takeuchi, Satoshi Taniguchi
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SEMICONDUCTOR DEVICE PROVIDED WITH PHOTODIODE, MANUFACTURING METHOD THEREOF, AND OPTICAL DISC DEVICE
Publication number: 20140319643Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: ApplicationFiled: July 7, 2014Publication date: October 30, 2014Inventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi -
Publication number: 20140300168Abstract: A vehicle headrest, including two side wings at opposite ends of the headrest that rotate around respective axes; and a locking mechanism that locks each of the side wings, and backwards movement is restricted by the locking mechanism when each side member is rotated around the respective axis.Type: ApplicationFiled: April 2, 2014Publication date: October 9, 2014Applicant: AISIN TECHNICAL CENTER OF AMERICA, INC.Inventors: Lindsey SZCZYGIEL, Mike Howlett, Eric Archambeau, Katsuhiko Takeuchi
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Patent number: 8801070Abstract: Disclosed is a resin garnish attached to a door frame forming the window frame of a vehicle door. The door frame is provided with a frame unit including an attachment unit having an insertion hole, and a weatherstrip fastened to said frame unit using a clip. The clip is inserted through the weatherstrip and the insertion hole to fasten the weatherstrip to the frame unit by engaging with the frame unit. The garnish is provided with a garnish body forming a design surface facing out of the vehicle, and an engaging protrusion unit arranged so as to protrude from the garnish body. In order to attach the garnish to the frame unit, the engaging protrusion unit is configured such that said unit, in a state inserted in the insertion hole, engages with an engaging claw provided on the clip.Type: GrantFiled: May 26, 2011Date of Patent: August 12, 2014Assignee: Aisin Seiki Kabushiki KaishaInventors: Katsuhiko Takeuchi, Hiroaki Yamasaki, Yasumitsu Shimizu
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Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
Patent number: 8803272Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: GrantFiled: November 30, 2009Date of Patent: August 12, 2014Assignee: Sony CorporationInventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi -
Publication number: 20140159117Abstract: A semiconductor device includes a channel layer; and a high resistance layer that is provided on the channel layer, and is made of a semiconductor with high resistance which has a conduction band position higher than that of the semiconductor which forms the channel layer. The semiconductor device includes a first conduction-type low resistance region provided on a surface layer of the high resistance layer, and is made of a semiconductor including first conduction type impurities. The semiconductor device includes: a source electrode and a drain electrode that are connected to the high resistance layer, in a position crossing the low resistance region; a gate insulating film provided on the low resistance region; and a gate electrode provided on the low resistance region via the gate insulating film. The semiconductor device includes current block regions between the low resistance region, and between the source electrode and the drain electrode respectively.Type: ApplicationFiled: November 22, 2013Publication date: June 12, 2014Applicant: Sony CorporationInventors: Satoshi Taniguchi, Katsuhiko Takeuchi
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Patent number: 8655542Abstract: An electronic tag is attached to a filter cartridge, which includes a filter. The electronic tag stores individual product information of the filter and wirelessly transmits the individual product information. A wireless receiver device is installed to a predetermined location of a vehicle, which is other than the filter cartridge and receives the individual product information transmitted from the electronic tag. A diagnostic device diagnoses whether the individual product information is received by the wireless receiver device or whether the filter cartridge installed in the vehicle has a desired filtering performance based on contents of the individual product information received by the wireless receiver device.Type: GrantFiled: May 22, 2012Date of Patent: February 18, 2014Assignee: Denso CorporationInventors: Hideki Narisako, Takashi Kikutani, Katsuhiko Takeuchi
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Publication number: 20140028440Abstract: A method of proximity control for a vehicle comprises determining, by a proximity determination system, whether a user is located within a predetermined distance from the vehicle; and communicating, by a mobile device and/or internet-based device, with the vehicle to gain access to the vehicle based on the proximity determination result.Type: ApplicationFiled: January 4, 2013Publication date: January 30, 2014Applicant: AISIN TECHNICAL CENTER OF AMERICA, INC.Inventors: Katsuhiko TAKEUCHI, Lindsey SZCZYGIEL, Eric ARCHAMBEAU, Kevin GARNER
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Publication number: 20130219799Abstract: To prevent easy removal of a glass run integral molding from a door frame, provided is a glass run integral molding to be assembled to an upper part of a door frame surrounding a window opening of a vehicle door. The glass run integral molding includes an outer peripheral-side side wall portion and an inner peripheral-side side wall portion for sandwiching a flange portion of the upper part, a car outer-side side wall portion for connecting a car outer-side end portion of the outer peripheral-side side wail portion and that of the inner peripheral-side side wall portion to each other and extending along a door glass surface, glass run portions for sealing a peripheral edge of a door glass, and body seal lip portions for sealing a clearance between the vehicle door and a vehicle body.Type: ApplicationFiled: October 7, 2011Publication date: August 29, 2013Inventors: Katsuhiko Takeuchi, Hiroaki Yamasaki, Eisuke Sato
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Publication number: 20130127196Abstract: Disclosed is a resin garnish attached to a door frame forming the window frame of a vehicle door. The door frame is provided with a frame unit including an attachment unit having an insertion hole, and a weatherstrip fastened to said frame unit using a clip. The clip is inserted through the weatherstrip and the insertion hole to fasten the weatherstrip to the frame unit by engaging with the frame unit. The garnish is provided with a garnish body forming a design surface facing out of the vehicle, and an engaging protrusion unit arranged so as to protrude from the garnish body. In order to attach the garnish to the frame unit, the engaging protrusion unit is configured such that said unit, in a state inserted in the insertion hole, engages with an engaging claw provided on the clip.Type: ApplicationFiled: May 26, 2011Publication date: May 23, 2013Inventors: Katsuhiko Takeuchi, Hiroaki Yamasaki, Yasumitsu Shimizu
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Patent number: 8408622Abstract: A frame molding is provided. The frame molding includes a frame molding main body having first claws and a holder member assembled with the frame molding main body. A holder member includes a metal holder portion and a resin holder portion fixed to the metal holder portion. The resin holder has receiving portions that are crimped by the claws.Type: GrantFiled: September 9, 2009Date of Patent: April 2, 2013Assignee: Aisin Seiki Kabushiki KaishaInventors: Toshifumi Yanai, Katsuhiko Takeuchi, Kazunori Kondo
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Publication number: 20130062664Abstract: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; a gate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.Type: ApplicationFiled: July 23, 2012Publication date: March 14, 2013Applicant: Sony CorporationInventors: Katsuhiko Takeuchi, Satoshi Taniguchi
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Publication number: 20120303204Abstract: An electronic tag is attached to a filter cartridge, which includes a filter. The electronic tag stores individual product information of the filter and wirelessly transmits the individual product information. A wireless receiver device is installed to a predetermined location of a vehicle, which is other than the filter cartridge and receives the individual product information transmitted from the electronic tag. A diagnostic device diagnoses whether the individual product information is received by the wireless receiver device or whether the filter cartridge installed in the vehicle has a desired filtering performance based on contents of the individual product information received by the wireless receiver device.Type: ApplicationFiled: May 22, 2012Publication date: November 29, 2012Applicant: DENSO CORPORATIONInventors: Hideki NARISAKO, Takashi KIKUTANI, Katsuhiko TAKEUCHI
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Patent number: 8226143Abstract: A joint structure of a door edge member (such as a garnish or trim) includes a door upper edge member having a baglike cross section (such as a partially hollow open receptacle), constituted by inner surfaces, at the longitudinal end portion thereof, and a door rear edge member having the longitudinal end portion inserted into the end portion of the door upper edge member having the baglike cross section and connected to the door upper edge member. The baglike cross section of the door upper edge member has a first cross-sectional portion provided on one end portion of the door upper edge member in the short side direction thereof, and a second cross-sectional portion provided on the other end portion side in the short side direction.Type: GrantFiled: November 28, 2008Date of Patent: July 24, 2012Assignee: Aisin Seiki Kabushiki KaishaInventors: Katsuhiko Takeuchi, Toshifumi Yanai, Kazunori Kondo
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Publication number: 20110187141Abstract: A frame molding is provided. The frame molding includes a frame molding main body having first claws and a holder member assembled with the frame molding main body. A holder member includes a metal holder portion and a resin holder portion fixed to the metal holder portion. The resin holder has receiving portions that are crimped by the claws.Type: ApplicationFiled: September 9, 2009Publication date: August 4, 2011Inventors: Toshifumi Yanai, Katsuhiko Takeuchi, Kazunori Kondo
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Patent number: 7891337Abstract: A fuel injection system designed to learn the quantity of fuel sprayed actually from a fuel injector into an internal combustion engine. When the engine is placed in a given learning condition, the system works to spray different quantities of the fuel for different injection durations in sequence to the engine through the fuel injector to collect a plurality of data on the quantity of the fuel sprayed actually from the fuel injector. The system analyzes the corrected data to determine an injection characteristic of the fuel injector, which may have changed from a designer-defined basic injection characteristic of the fuel injector, and uses the injection characteristic in calculating an injection duration or on-duration for which the fuel injector is to be opened to spray a target quantity of fuel.Type: GrantFiled: August 29, 2008Date of Patent: February 22, 2011Assignee: Denso CorporationInventors: Katsuhiko Takeuchi, Kouji Ishizuka, Manabu Tsujimura
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Patent number: 7891137Abstract: A vehicle door frame includes a first frame and a second frame abutted against each other at abutting faces thereof at a predetermined angle. The abutting faces include first abutting faces provided in design portions and second abutting faces provided in hollow portions, respectively. The first abutting faces form a first angle with respect to the second abutting faces viewed from a first direction perpendicular to the design faces, respectively. The first abutting faces also form a second angle with respect to the second abutting faces when viewed from a direction perpendicular to the longitudinal direction of the frames and perpendicular to the first direction, respectively.Type: GrantFiled: October 4, 2006Date of Patent: February 22, 2011Assignee: Aisin Seiki Kabushiki KaishaInventors: Katsuhiko Takeuchi, Koji Yoshida
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Patent number: 7818479Abstract: A device interface circuit unit transfers a command and data in packet format between the unit and the host. A transport layer is provided with a receive FIFO, a command detection circuit and a send FIFO, and an application layer is provided with a receive task file register and a send task control file register. An available time is generated for each break point of a packet during data transfer in order to receive another command packet from the host. When the command packet is received from the host in the available time during data transfer, the data transfer is suspended and the received command is decoded to execute a process for continuing or canceling the data transfer, after which the data transfer is resumed.Type: GrantFiled: February 12, 2004Date of Patent: October 19, 2010Assignee: Toshiba Storage Device CorporationInventors: Katsuhiko Takeuchi, Shin-ichi Utsunomiya, Nobuyuki Myoga, Sumie Matsubayashi, Hirohide Sugahara
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Publication number: 20100181798Abstract: A joint structure of a door edge member includes a door upper edge member having a baglike cross section, constituted by inner surfaces, at the longitudinal end portion thereof, and a door rear edge member having the longitudinal end portion inserted into the end portion of the door upper edge member having the baglike cross section and connected to the door upper edge member. The baglike cross section of the door upper edge member has a first cross-sectional portion provided on one end portion of the door upper edge member in the short side direction thereof, and a second cross-sectional portion provided on the other end portion side in the short side direction.Type: ApplicationFiled: November 28, 2008Publication date: July 22, 2010Applicant: AISIN SEIKI KABUSHIKI KAISHAInventors: Katsuhiko Takeuchi, Toshifumi Yanai, Kazunori Kondo
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Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
Publication number: 20100155875Abstract: A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.Type: ApplicationFiled: November 30, 2009Publication date: June 24, 2010Applicant: Sony CorporationInventors: Hiroshi Yumoto, Shuji Yoneda, Tomokazu Mukai, Katsuhiko Takeuchi