Abstract: A surface inspection device (1) according to the present invention comprises: a plate-shaped sample holding member (3) which can hold a sample (2); a spindle motor (4) for rotating the sample holding member (3); a turntable (5) which is fixed to the spindle motor (4) and rotated by the spindle motor (4); a frame (6) to which the spindle motor (4) is fixed; a plurality of support members (12) each having one end fixed to the sample holding member (3) and the other end fixed to the turntable (5), the support members supporting the sample holding member (3) such that the sample holding member is displaceable in a focus direction which is the height direction with respect to the turntable (5); and a sample drive unit (11) which displaces the sample holding member (3) in the focus direction with respect to the turntable (5). This surface inspection device (1) can accurately drive the sample (2) in the focus direction.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier through which a cooling gas is supplied to the substrate by adjusting a direction of supplying the cooling gas.

Abstract: There is provided a technique that includes: loading a substrate in which a treatment target film and an action target film are formed into a process chamber; irradiating the action target film with an electromagnetic wave; and causing the action target film to generate heat by the irradiation with the electromagnetic wave and modifying the treatment target film with a directionality by heating the treatment target film with the heat generated by the action target film.

Abstract: According to the present disclosure, there is provided a technique capable of preventing a substrate from being warped or cracked due to a heat treatment process. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber in which a plurality of substrates accommodated in a substrate retainer are processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier configured to supply a cooling gas is supplied to between adjacent substrates among the plurality of substrates via a plurality of gas supply ports provided so as to correspond to an interval of the plurality of substrates accommodated in the substrate retainer.

Abstract: There is provided a technique, which includes: a process chamber where a substrate is processed; a microwave oscillator configured to supply microwaves to the process chamber; and a controller configured to be capable of controlling the microwave oscillator to perform: a heating process where the substrate is heated with a first microwave, among the supplied microwaves, supplied at a first microwave power so that a process of supplying the first microwave during a supply time and a process of stopping the supply of the first microwave during a stop time shorter than the supply time are performed a predetermined number of times or for a first predetermined time; and a modifying process in which the substrate is supplied with a second microwave, among the supplied microwaves, at a second microwave power higher than the first microwave power for a second predetermined time while maintaining the second microwave power.

Abstract: There is provided is a technique includes: at least one processing chamber in which a substrate is processed; a processing gas supplier that supplies a processing gas to the at least one processing chamber; a transfer chamber communicable with the at least one processing chamber; a first inert gas supplier that supplies an inert gas to the transfer chamber; a first exhauster that discharges an atmosphere from the transfer chamber; and a second inert gas supplier that supplies the inert gas discharged by the first exhauster to the at least one processing chamber or a downstream portion of the at least one processing chamber.

Abstract: There is provided a technique that include: a process chamber configured to process a substrate at which at least one target film and a heat assist film are formed; and an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber, wherein when the substrate is irradiated with the electromagnetic wave, the heat assist film generates heat and the at least one target film is modified by the heat.

Abstract: A voice signal control device includes a processor having hardware configured to process a voice signal generated by a voice signal generation device configured to generate the voice signal according to setting information of a voice output in a voice processing device configured to output the voice signal, and make the voice processing device output voice according to the voice signal after the processing.

Abstract: A speech intelligibility calculating method is a method executed by a speech intelligibility calculating apparatus, the speech intelligibility calculating method including: a speech intelligibility calculating step of calculating a speech intelligibility that is an objective assessment index of a speech quality, based on a difference component between features found through an analysis of an input clean speech and an input enhanced speech, using one or more filter banks; and a step of outputting the speech intelligibility calculated at the speech intelligibility calculating step. This speech intelligibility calculating method is capable of calculating a speech intelligibility without any dependency on a speech enhancement method.

Abstract: There is provided a technique capable of cleaning a film deposited on an outer peripheral portion of a substrate placing surface of a substrate support. According to one aspect thereof, a substrate processing apparatus includes: a process chamber where a product substrate is processed; a substrate support provided in the process chamber and provided with a substrate placing surface whereon the product substrate is placed; a process gas supplier wherethrough a process gas is supplied into the process chamber while the product substrate being placed on the substrate placing surface; and a cleaning gas supplier wherethrough a cleaning gas is supplied into the process chamber while a dummy substrate being placed on the substrate placing surface. An outer peripheral portion of the dummy substrate is out of contact with the substrate placing surface in a state where the dummy substrate is placed on the substrate placing surface.

Abstract: A speech intelligibility calculating method is a method executed by a speech intelligibility calculating apparatus, the speech intelligibility calculating method including: a speech intelligibility calculating step of calculating a speech intelligibility that is an objective assessment index of a speech quality, based on a difference component between features found through an analysis of an input clean speech and an input enhanced speech, using one or more filter banks; and a step of outputting the speech intelligibility calculated at the speech intelligibility calculating step. This speech intelligibility calculating method is capable of calculating a speech intelligibility without any dependency on a speech enhancement method.

Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.

Abstract: A voice signal control device includes a processor having hardware configured to process a voice signal generated by a voice signal generation device configured to generate the voice signal according to setting information of a voice output in a voice processing device configured to output the voice signal, and make the voice processing device output voice according to the voice signal after the processing.

Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

Abstract: There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.

Abstract: Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

Abstract: The present invention provides a method of producing a suspension containing a nano-cocrystal having an average particle size of not more than 300 nm, a polymer having a number average molecular weight of not less than 3,000, a surfactant having a number average molecular weight of less than 3,000 and water, which method including wet grinding a cocrystal, which is constituted of an organic compound and a cocrystal former and is not dissociated by wet grinding, in water containing the polymer and the surfactant.

Abstract: There is provided a technique for facilitating a patterning process by the DSA appropriately and efficiently. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including (a) accommodating in a process chamber a substrate having a guide pattern thereon; (b) supplying a plasma of a first process gas into the process chamber to subject the substrate to first one of a first process for hydrophilizing the substrate and a second process for hydrophobilizing the substrate; and (c) supplying a plasma of a second process gas into the process chamber to subject the substrate to second one of the first process and the second process other than the first one of the first process and the second process.

Abstract: Described herein is a technique capable of improving the uniformity of device characteristics. A method of manufacturing a semiconductor device may include: (a) accommodating in a process chamber a substrate having an organic film thereon; (b) supplying a metal-containing gas to the substrate; (c) supplying a first oxygen-containing gas and a dilute gas to the substrate, the dilute gas containing at least one of a second oxygen-containing gas and an inert gas; (d) performing a cycle a predetermined number of time, the cycle including (b) and (c), wherein a flow rate of the first oxygen-containing gas is equal to or greater than a flow rate of the dilute gas in one of the cycle performed the predetermined number of time.

Abstract: The present invention provides a method of producing a suspension containing a nano-cocrystal having an average particle size of not more than 300 nm, a polymer having a number average molecular weight of not less than 3,000, a surfactant having a number average molecular weight of less than 3,000 and water, which method including wet grinding a cocrystal, which is constituted of an organic compound and a cocrystal former and is not dissociated by wet grinding, in water containing the polymer and the surfactant.