Abstract: A branching device (10) includes a switch (SW1), a fixed filter circuit (11), and a tunable filter (TF1). The switch (SW1) includes a common terminal (Ps11) and individual terminals (Ps12, Ps13). The fixed filter circuit (11) is connected to the individual terminal (Ps12) and has a fixed pass band. The tunable filter (TF1) is connected to the individual terminal (Ps13) and has a tunable pass band. The fixed filter circuit (11) includes filters (FIL1, FIL2) having different pass bands. The pass bands of the filters (FIL1, FIL2) correspond to frequency bands to be used in carrier aggregation.

Abstract: A branching device (10) includes a switch (SW1), a fixed filter circuit (11), and a tunable filter (TF1). The switch (SW1) includes a common terminal (Ps11) and individual terminals (Ps12, Ps13). The fixed filter circuit (11) is connected to the individual terminal (Ps12) and has a fixed pass band. The tunable filter (TF1) is connected to the individual terminal (Ps13) and has a tunable pass band. The fixed filter circuit (11) includes filters (FIL1, FIL2) having different pass bands. The pass bands of the filters (FIL1, FIL2) correspond to frequency bands to be used in carrier aggregation.

Abstract: A circuit module includes a duplexer and a circuit substrate. A first signal path connects a first external electrode to a second external electrode. A second signal path connects a third external electrode to a fourth external electrode. A third signal path connects a fifth external electrode to a sixth external electrode. A first ground path connects a seventh external electrode to an eighth external electrode. A second ground path is connected to a ninth external electrode and is capacitively coupled to the second signal path.

Abstract: A piezoelectric device includes a piezoelectric substrate, a conductive pattern which is provided on one main surface of the piezoelectric substrate and which includes an IDT electrode, a supporting layer which is arranged on the one main surface of the piezoelectric substrate so as to surround the periphery of an IDT-forming region in which the IDT electrode is provided and which has a thickness greater than that of the IDT electrode, and a cover layer which is arranged on the supporting layer and which covers the IDT-forming region. The supporting layer includes removed sections provided at a plurality of positions at least in a region close to the IDT-forming region, the removed sections being obtained by partially removing a portion of the supporting layer to be bonded to the one main surface of the piezoelectric substrate.

Abstract: A piezoelectric device includes a piezoelectric substrate, a conductive pattern which is provided on one main surface of the piezoelectric substrate and which includes an IDT electrode, a supporting layer which is arranged on the one main surface of the piezoelectric substrate so as to surround the periphery of an IDT-forming region in which the IDT electrode is provided and which has a thickness greater than that of the IDT electrode, and a cover layer which is arranged on the supporting layer and which covers the IDT-forming region. The supporting layer includes removed sections provided at a plurality of positions at least in a region close to the IDT-forming region, the removed sections being obtained by partially removing a portion of the supporting layer to be bonded to the one main surface of the piezoelectric substrate.

Abstract: A surface acoustic wave device includes a sealing resin for sealing a gap between a surface acoustic wave element and a mounting board. The sealing resin is prevented from flowing so as to reach a vibrating portion of the surface acoustic wave element. In the surface acoustic wave device, a surface acoustic wave element is connected to a mounting board through bumps, the outer peripheral edge of the surface acoustic wave element is sealed by a sealing resin, and a vibration space is secured between the vibrating portion of the surface acoustic wave element and mounting board. In the surface acoustic wave element, an outer barrier enclosing the bumps and the vibrating portion and an inner barrier enclosing the vibrating portion are provided, the height of the outer barrier is lower than the total height of the height of the bumps and the height of electrode lands formed on the mounting board, and the height of the inner barrier is lower than the height of the bumps.

Abstract: A surface acoustic wave device includes a sealing resin for sealing a gap between a surface acoustic wave element and a mounting board. The sealing resin is prevented from flowing so as to reach a vibrating portion of the surface acoustic wave element. In the surface acoustic wave device, a surface acoustic wave element is connected to a mounting board through bumps, the outer peripheral edge of the surface acoustic wave element is sealed by a sealing resin, and a vibration space is secured between the vibrating portion of the surface acoustic wave element and mounting board. In the surface acoustic wave element, an outer barrier enclosing the bumps and the vibrating portion and an inner barrier enclosing the vibrating portion are provided, the height of the outer barrier is lower than the total height of the height of the bumps and the height of electrode lands formed on the mounting board, and the height of the inner barrier is lower than the height of the bumps.

Abstract: A surface acoustic wave duplexer includes a branching section having a plurality of surface acoustic wave filters provided on a first electrode pattern on the front surface of a multi-layer substrate. An antenna terminal, a transmission terminal, and a receiving terminal are provided on peripheral portions of a fourth electrode pattern on the rear surface of the multi-layer substrate, and are connected to the branching section. A matching stripline disposed on a third electrode pattern in an intermediate layer of the multi-layer substrate, and connected to the antenna terminal is arranged such that it is grounded to at least one side other than the side opposite the side where the antenna terminal is located.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Abstract: A method of making surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Abstract: A surface acoustic wave duplexer includes a branching section having a plurality of surface acoustic wave filters provided on a first electrode pattern on the front surface of a multi-layer substrate. An antenna terminal, a transmission terminal, and a receiving terminal are provided on peripheral portions of a fourth electrode pattern on the rear surface of the multi-layer substrate, and are connected to the branching section. A matching stripline disposed on a third electrode pattern in an intermediate layer of the multi-layer substrate, and connected to the antenna terminal is arranged such that it is grounded to at least one side other than the side opposite the side where the antenna terminal is located.

Abstract: A surface acoustic wave includes a surface acoustic wave element including a piezoelectric substrate having IDTs, input/output terminals, and reference potential terminals provided thereon and a package enclosing the surface acoustic element and having electrode lands and external terminals. The resonance frequency of the resonator defined by inductances generated by the reference potential terminals of the external terminals of the package, is positioned in the vicinity of an image frequency occurring at a time of performing frequency conversion in a super heterodyne system.

Abstract: A method of manufacturing a surface acoustic wave apparatus including the steps of forming a first conductive film, depositing a first resist on the first conductive film and patterning the first resist, dry-etching the first conductive film using the patterned first resist to form IDT electrodes, a short-circuit wiring electrode for establishing electrical connection between IDT electrodes, and a second conductive film provided where the second surface acoustic wave device is constructed, removing the second conductive film, depositing a second resist and heating the second resist, patterning the second resist on the electrodes, forming a second conductive film having a thickness which is different from the first conductive film, removing the second resist to form the electrodes of the second surface acoustic wave device and to expose the electrodes of the first surface acoustic wave device, and disconnecting the short-circuit wiring electrode.

Abstract: A method of manufacturing a surface acoustic wave apparatus including the steps of forming a first conductive film, depositing a first resist on the first conductive film and patterning the first resist, dry-etching the first conductive film using the patterned first resist to form IDT electrodes, a short-circuit wiring electrode for establishing electrical connection between IDT electrodes, and a second conductive film provided where the second surface acoustic wave device is constructed, removing the second conductive film, depositing a second resist and heating the second resist, patterning the second resist on the electrodes, forming a second conductive film having a thickness which is different from the first conductive film, removing the second resist to form the electrodes of the second surface acoustic wave device and to expose the electrodes of the first surface acoustic wave device, and disconnecting the short-circuit wiring electrode.

Abstract: A surface acoustic wave device includes first and second SAW filters and first, second and third SAW resonators. The first SAW filter has first and second ends and a first pass band in a first frequency region, and the second SAW filter has first and second ends and a second pass band in a second frequency region which is lower than the first frequency region. The second end of the second SAW filter is connected to the second end of the first SAW filter in parallel to form a connection point. The first and second one-port SAW resonators are connected in series between the second end of the first SAW filter and the connection point, and have an antiresonant frequency higher than the frequency of the pass band of the first SAW filter. The third one-port SAW resonator connected in series between the second end of the second SAW filter and the connection point and has an antiresonant frequency higher than the frequency of the pass band of the second SAW filter.

Abstract: A surface acoustic wave apparatus includes first and second longitudinally-coupled resonator filters disposed on a surface-wave board. In each longitudinally-coupled resonator filter, the ground electrodes of IDTs disposed at opposite sides of the center IDT and adjacent to reflectors are connected to different ground electrodes located on the same layer in the package, with at least two bonding wires.

Abstract: A surface acoustic wave device has a structure in which first and second filters are connected in parallel at a connection point connected to an input terminal or an output terminal. The surface acoustic wave device includes the first SAW filter having a capacitive impedance in a passband of the second SAW filter and having a higher passband than the second SAW filter and the second SAW filter having a capacitive impedance in the passband of the first SAW filter and having a lower passband than the first SAW filter. The second SAW filter is connected in parallel at the connection point on the input terminal or output terminal side of the first SAW filter. The impedance of the first SAW filter in the passband at the parallel-connected end has, before parallel connection, a resistance component of about 1.2 Z.sub.0 or higher with respect to the characteristic impedance Z.sub.0 of the device, and is higher than the impedance of the second SAW filter in the passband at the parallel-connected end thereof.

Abstract: A surface acoustic wave device which not only is low-loss in a pass band and has high attenuation in an attenuation region but also has superior power-resistance and has a large reflection coefficient in a blocking region comprises a first one-port SAW resonator filter connected in parallel with a three-electrode vertically connected double mode SAW resonator filter. The first one-port SAW resonator filter is so constructed that its resonance frequency is outside the pass band of the vertically connected double mode SAW resonator filter on the low-frequency side thereof and a connection point between the double mode SAW resonator filter and the first one-port SAW resonator filter is provided to an input terminal.

Abstract: A surface acoustic-wave resonator filter having improved group delay time characteristics. The filter comprises three energy-confined acoustic-wave resonator filter sections formed on a piezoelectric substrate. The second resonator filter section is positioned between the first and third resonator filter sections. One frequency in a vertical higher-order mode of the second filter section is placed on the lower-frequency side of one frequency in a vertical higher-order mode of the first and third filter sections. Or, one frequency in a vertical lower-order mode of the second filter section is placed on the higher-frequency side of one frequency in a vertical lower-order mode of the first and third filter sections.