Patents by Inventor Katsuji Arakawa

Katsuji Arakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060118512
    Abstract: A method for manufacturing a droplet ejection head includes a step of forming recessed sections for forming nozzles by etching a first face of a silicon substrate, a step of bonding a support substrate to the first face of the silicon substrate, a step of reducing the thickness of the silicon substrate by processing a second face of the silicon substrate that is opposite to the first face thereof, and a step of removing the support substrate from the silicon substrate after the reduction of the thickness of the silicon substrate. A droplet ejection head manufactured by the method is provided. A droplet ejection apparatus includes the droplet ejection head.
    Type: Application
    Filed: December 7, 2005
    Publication date: June 8, 2006
    Inventors: Katsuji Arakawa, Yasutaka Matsumoto
  • Patent number: 6989513
    Abstract: A stable and durable heat-generating element and substrate, a method of efficient and highly precise manufacture of same, and equipment utilizing same are obtained. Employing as material a silicon substrate into at least a portion of which boron or another impurity is diffused to impart conductivity, a heater portion, in which are provided one or a plurality of slits the corner portions of which are removed or are rounded, is fabricated integrally on the silicon substrate by etching processes. Simultaneously with this, a depression portion provided below to control the heating state of the heater portion is formed integrally.
    Type: Grant
    Filed: June 20, 2003
    Date of Patent: January 24, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Katsuji Arakawa, Masahiro Fujii, Hiroshi Koeda
  • Publication number: 20050269289
    Abstract: A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silicon substrate 10) constituted from silicon as a main material, the processing substrate having two major surfaces; providing a supporting substrate 50 for supporting the processing substrate onto one major surface of the processing substrate 50; and forming the plurality of nozzle openings 22 on the other major surface of the processing substrate by subjecting the other major surface of the processing substrate to an etching process while the processing substrate is supported by the supporting substrate 50.
    Type: Application
    Filed: April 27, 2005
    Publication date: December 8, 2005
    Inventors: Yoshihide Matsuo, Katsuji Arakawa
  • Publication number: 20050115679
    Abstract: A surface treatment apparatus 1 is constructed to hold a substrate 10 when surface treatment is carried out to a back surface 101 of the substrate 10. The surface treatment apparatus 1 includes at least one enclosed space each defined by a concave portion 32 and a front surface 102 of the substrate 10; and an O-ring 2 (contact portion) adapted to hermetically contact with the front surface 102 of the substrate 10 to produce negative pressure in cooperation with the O-ring 2 and the front surface 102 of the substrate 10. The surface treatment apparatus 1 is constructed so that the substrate 10 is attracted onto the surface treatment apparatus 1 using a difference between the negative pressure and atmospheric pressure by decompressing the enclosed space in a decompression chamber and then bringing out the substrate 10 from the inside of the decompression chamber to environment under atmospheric pressure.
    Type: Application
    Filed: September 29, 2004
    Publication date: June 2, 2005
    Inventors: Ryuichi Kurosawa, Fumio Takagi, Hiroshi Koeda, Kazufumi Oya, Katsuji Arakawa
  • Publication number: 20050095811
    Abstract: A method for surface treatment includes: a first step in which a surface treatment apparatus 1 and a substrate 10 in a state where a front surface 102 of the substrate 10 faces the surface treatment apparatus 1 are conveyed to the inside of a decompression chamber to decompress a plurality of concave portions 32 (enclosed spaces); a second step in which the surface treatment apparatus 1 and the substrate 10 are brought out from the inside of the decompression chamber to environment under atmospheric pressure in a state where the substrate 10 is being attracted to the surface treatment apparatus 1 with the use of a difference between negative pressure inside the concave portions 32 and atmospheric pressure; and a third step in which the surface treatment is carried out to a back surface 101 of the substrate 10 with the substrate 10 being attracted by the surface treatment apparatus 1.
    Type: Application
    Filed: September 29, 2004
    Publication date: May 5, 2005
    Inventors: Hiroshi Koeda, Katsuji Arakawa, Kazufumi Oya
  • Publication number: 20040256376
    Abstract: A stable and durable heat-generating element and substrate, a method of efficient and highly precise manufacture of same, and equipment utilizing same are obtained. Employing as material a silicon substrate into at least a portion of which boron or another impurity is diffused to impart conductivity, a heater portion, in which are provided one or a plurality of slits the corner portions of which are removed or are rounded, is fabricated integrally on the silicon substrate by etching processes. Simultaneously with this, a depression portion provided below to control the heating state of the heater portion is formed integrally.
    Type: Application
    Filed: June 20, 2003
    Publication date: December 23, 2004
    Inventors: Katsuji Arakawa, Masahiro Fuji, Hiroshi Koeda
  • Patent number: 6677237
    Abstract: A semiconductor chip having a vertical current conduction structure of a high reliability: a semiconductor device, a circuit substrate, and an electronic apparatus each containing such semiconductor chips; and a method for producing them. A prehole (3) is formed in a silicon substrate (10) surface-oriented to a (100) face by laser beam irradiation. The prehole (3) is enlarged by anisotropic etching to thereby form a through-hole (4). An electrically insulating film is formed on an inner wall of the through-hole (4). An electrically conducting material is provided inside the insulating film to thereby form a metal bump (30).
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: January 13, 2004
    Assignee: Seiko Epson Corporation
    Inventors: Kazushige Umetsu, Jun Amako, Shinichi Yotsuya, Katsuji Arakawa
  • Patent number: 6563079
    Abstract: A method for processing a work in which a processed hole with a high aspect ratio is formed by laser machining. Silicon oxide films (2) are formed as protective films on front and rear surfaces, respectively, of a silicon substrate (1). The silicon substrate (1) is irradiated with a laser light through the protective films (2) to thereby perform a perforating process. Alternatively, the silicon substrate (1) is irradiated with a circularly or randomly polarized laser light. Hence, a processed hole with a high aspect ratio can be obtained. Moreover, the processed hole can be shaped straightly, so that processing accuracy is improved.
    Type: Grant
    Filed: October 23, 2000
    Date of Patent: May 13, 2003
    Assignee: Seiko Epson Corporation
    Inventors: Kazushige Umetsu, Jun Amako, Shinichi Yotsuya, Katsuji Arakawa
  • Publication number: 20020151169
    Abstract: A semiconductor chip having a vertical current conduction structure of a high reliability: a semiconductor device, a circuit substrate, and an electronic apparatus each containing such semiconductor chips; and a method for producing them. A prehole (3) is formed in a silicon substrate (10) surface-oriented to a (100) face by laser beam irradiation. The prehole (3) is enlarged by anisotropic etching to thereby form a through-hole (4). An electrically insulating film is formed on an inner wall of the through-hole (4).
    Type: Application
    Filed: June 12, 2002
    Publication date: October 17, 2002
    Applicant: Seiko Epson Corporation
    Inventors: Kazushige Umetsu, Jun Amako, Shinichi Yotsuya, Katsuji Arakawa
  • Patent number: 6447107
    Abstract: An ink jet head which is -prevented from corrosion by ink, and an ink jet recording apparatus using the same. An ink-resistant thin film (25) made of Ti, a Ti compound, or Al2O3 is formed on the surface of recess portions (21 to 23) of a substrate in which a reservoir (8) for reserving ink, orifices (7) and pressure chambers (6) are formed. Since this ink-resistant thin film (25) is formed, corrosion can be restrained without reducing printing quality, without necessity to change the component/composition of the ink and the material of the head, and with little change of its manufacturing process, even if there is a fear that the head material may be corroded by the ink.
    Type: Grant
    Filed: November 23, 1998
    Date of Patent: September 10, 2002
    Assignee: Seiko Epson Corporation
    Inventors: Yuji Chino, Katsuji Arakawa
  • Patent number: 6424048
    Abstract: A semiconductor chip having a vertical current conduction structure of a high aspect ratio and high reliability: a semiconductor device, a circuit substrate, and an electronic apparatus each containing such semiconductor chips; and a method for producing them. A prehole (3) is formed in a silicon substrate (10) surface-oriented to a (100) face by laser beam irradiation. The prehole (3) is enlarged by anisotropic etching to thereby form a through-hole (4). An electrically insulating film is formed on an inner wall of the through-hole (4). An electrically conducting material is provided inside the insulating film to thereby form a metal bump (30).
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: July 23, 2002
    Assignee: Seiko Epson Corporation
    Inventors: Kazushige Umetsu, Jun Amako, Shinichi Yotsuya, Katsuji Arakawa
  • Patent number: 6375310
    Abstract: An ink jet head in which a multi-nozzle structure is attained, and highly accurate alignment of ink jet head chips is realized, a method for manufacturing the ink jet head, and a recording apparatus on which the ink jet head is mounted. Guide protrusions (141) for alignment of ink jet head chips (41) are formed in an ink jet head chip bonded surface (134) of a nozzle plate (133), the ink jet head chips (41) are aligned by inserting the guide protrusions (141) of the nozzle plate (133) into guide grooves (51) of nozzle surfaces (42) of the ink jet head chips (41), and the nozzle plate (133) and the respective ink jet head chips (41) are bonded with each other by a bonding agent.
    Type: Grant
    Filed: November 12, 1998
    Date of Patent: April 23, 2002
    Assignee: Seiko Epson Corporation
    Inventors: Katsuji Arakawa, Hiroshi Koeda