Abstract: The invention provides a vacuum processing apparatus comprising: a plurality of vacuum vessels, each having a processing chamber capable of processing a subject substrate sample placed therein under reduced pressure; a cassette stage for mounting a cassette capable of containing a plurality of the samples; at least one transfer apparatus for transferring the sample from the cassette to the processing chamber in one of the vacuum vessels along a predetermined path and returning the sample processed in the processing chamber to the cassette; and an aligner placed on the path between the cassette stage and the plurality of vacuum vessels for aligning the sample to a predetermined position. The aligner aligns the sample to different positions depending on processings applied to the sample.

Abstract: A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 ?m or less to have heat resistance.

Abstract: A vacuum processing apparatus for plasma processing a sample, by controlling the temperature distribution, the RF bias and the electrostatic adsorption bias of the sample table, wherein the sample table comprises a plurality of sample table blocks (first, second, third, and nth sample table blocks) divided from the sample table circumferentially, that is, coaxially or radially into a plurality of portions each in a structure independent electrically and heat conductively, and each of the sample table blocks has a unit for conducting independent control for each of the temperature, the RF bias, or the pressure at the wafer rear face of the wafer.

Abstract: A maintenance method including performing a maintenance operation for a plasma processing apparatus having a vacuum vessel having a formed processing chamber inside, a plasma generation device for generating plasma in the processing chamber, and an electrode for holding a sample to be processed in the processing chamber. The plasma processing chamber is structured so that an upper wall of the vacuum vessel is an open-close part, and at least one of parts constituting the plasma generation device including a non-metallic brittle member is arranged in the open-close part, and at least one part of an upper wall constituting an upper side surface of the processing chamber is rotated around an almost horizontal axis and the open-close part can be held stably in a state that the open-close part on an inner side of the processing chamber is directed upward.