Patents by Inventor Katsumi Miyano

Katsumi Miyano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage MOS transistor
    Patent number: 4766474
    Abstract: A MOS transistor is featured by providing mult-layered covering elements for covering a channel region of the semiconductor device. Each of the covering elements is interposed by an insulating layer. Preferably, the covering layers comprise first and second covering layers neither of which are connected to either of the drain electrode, the source electrode, or the gate electrode. A field plate layer, as a third covering layer, is disposed over the first and second covering layers.
    Type: Grant
    Filed: May 27, 1981
    Date of Patent: August 23, 1988
    Assignee: Sharp Kabushiki Kiasha
    Inventors: Kiyotoshi Nakagawa, Katsumi Miyano, Takeo Fujimoto