Patents by Inventor Katsumi Murase

Katsumi Murase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Injection molding machine
    Patent number: 6186764
    Abstract: The injection molding machine comprises the closing mechanism 5 having the nozzle touch member 3 to close the tip opening 1a of the nozzle 1 and the electric heater 6 to regulate the temperature of the nozzle touch member 3. The closing member 5 is constituted in such a manner as the arm 13 is pivotally supported on the jacket cover 11 mounted on the nozzle 1, the cylinder 7 is mounted on mounting member 14 provided at the tip of the arm 13, and the nozzle touch member 3 is supported at the tip of the piston rod 7a. The electric heater 6 is arranged around the nozzle touch member 3. When the arm 13 is rotated from the retreated position R to the closed position C by the actuation of the rotor 8, the nozzle touch member 3 is faced to the tip opening 1a of the nozzle 1, and by extending the cylinder 7, the nozzle touch member 3 regulated to the temperature suitable for the resin material by the electric heater 6 closes the tip opening 1a from its front surface.
    Type: Grant
    Filed: December 11, 1998
    Date of Patent: February 13, 2001
    Assignees: Kabushiki Kaisha Meiki Seisakusho, Sanko Gosei Ltd.
    Inventors: Katsumi Murase, Taiki Watanabe, Shozo Honda
  • Semiconductor device and method of farbricating the same
    Patent number: 5811872
    Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: September 22, 1998
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Katsuyuki Machida, Katsumi Murase, Nobuhiro Shimoyama, Toshiaki Tsuchiya, Junichi Takahashi, Kazushige Minegishi, Yasuo Takahashi, Hideo Namatsu, Kazuo Imai
  • Method of fabricating semiconductor device with water protective film
    Patent number: 5512513
    Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
    Type: Grant
    Filed: August 25, 1994
    Date of Patent: April 30, 1996
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Katsuyuki Machida, Katsumi Murase, Nobuhiro Shimoyama, Toshiaki Tsuchiya, Junichi Takahashi, Kazushige Minegishi, Yasuo Takahashi, Hideo Namatsu, Kazuo Imai
  • Semiconductor device and method of fabricating the same
    Patent number: 5376590
    Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
    Type: Grant
    Filed: January 19, 1993
    Date of Patent: December 27, 1994
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Katsuyuki Machida, Katsumi Murase, Nobuhiro Shimoyama, Toshiaki Tsuchiya, Junichi Takahashi, Kazushige Minegishi, Yasuo Takahashi, Hideo Namatsu, Kazuo Imai
  • Electrode and semiconductor device provided with the electrode
    Patent number: 4521794
    Abstract: A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.
    Type: Grant
    Filed: July 3, 1984
    Date of Patent: June 4, 1985
    Assignee: Nippon Telegraph & Telephone Public Corporation
    Inventors: Katsumi Murase, Yoshihiko Mizushima
  • Method of manufacturing insulating film and electric device utilizing the same
    Patent number: 4460417
    Abstract: An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.
    Type: Grant
    Filed: October 22, 1982
    Date of Patent: July 17, 1984
    Assignee: Nippon Telegraph & Telephone Public Corporation
    Inventors: Katsumi Murase, Teruo Tamama, Yoshihito Amemiya, Yoshihiko Mizushima