Abstract: A light source unit includes a plurality of light sources emitting light for irradiating an object, and a holding portion holding the plurality of light sources having an insertion hole for an optical fiber inserted therethrough to propagate the light from the object formed therein. The holding portion holds each of the plurality of light sources such that an irradiation region of the light of each of the plurality of light sources is formed on one side of the holding portion. The insertion hole has a first opening that is an opening facing the irradiation region and a second opening that is an opening different from the first opening, and is formed in the holding portion such that one end surface of the optical fiber is exposed from the first opening and faces the irradiation region when the optical fiber is inserted therethrough.

Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.

Abstract: Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p? layer 11, a collector p layer 23, a drift layer 10, an emitter electrode 18, a collector electrode 28, an emitter-side gate electrode 17, an emitter n layer 12, a collector p? layer 23a, a collector-side gate electrode 27, and a collector n layer 22 configure a semiconductor device 1, and a total length of a first facing region of the emitter-side gate electrode 17 in a gate width direction facing an emitter layer p? 11 via a gate insulating film 15 is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode 27 facing an impurity layer 23a via a collector-side gate insulating film 25.

Abstract: A piezoelectric bulk wave device includes a support including a support substrate, a piezoelectric layer on the support and including first and second principal surfaces, an IDT electrode on the first principal surface and including a pair of comb-shaped electrodes each including electrode fingers and a busbar connecting the electrode fingers, and a frequency adjustment film on the second principal surface and overlapping at least a portion of the IDT electrode. The support includes a hollow portion overlapping at least a portion of the IDT electrode. d/p is less than or equal to about 0.5. Via holes are provided to the piezoelectric layer and the frequency adjustment film. Wiring electrodes are provided in the via holes and on the frequency adjustment film and electrically connected to the busbars of the comb-shaped electrodes.

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.

Abstract: An acoustic wave device includes a first layer including a support substrate, a second layer on the first layer and including a piezoelectric film, and a first excitation electrode on the second layer. A cavity is between the first and second layers, and the first excitation electrode at least partially overlaps the cavity in a stacking direction of the first and second layers. A surface roughness of a major surface of the first layer facing the cavity is different from a surface roughness of a major surface of the second layer facing the cavity.

Abstract: An acoustic wave device includes a support, a piezoelectric layer, a first resonator including a first portion of the piezoelectric layer and a first functional electrode in the first portion of the piezoelectric layer, and a second resonator including a second portion of the piezoelectric layer and a second functional electrode in the second portion of the piezoelectric layer. A first hollow portion in the support overlaps the first resonator, and a second hollow portion in the support overlaps the second resonator. At least one first through-hole penetrates the piezoelectric layer and communicates with the first hollow portion, and at least one second through-hole penetrates the piezoelectric layer and communicates with the second hollow portion. A volume and a total opening area of the first hollow portion are larger than those of the second hollow portion.

Abstract: An acoustic wave device includes a piezoelectric layer including a first major surface and a second major surface facing each other, a functional electrode on at least one of the first major surface and the second major surface of the piezoelectric layer, and a support substrate laminated on the second major surface side of the piezoelectric layer. An air gap is provided between the support substrate and the piezoelectric layer. At least a portion of the functional electrode overlaps the air gap as seen in a lamination direction of the support substrate and the piezoelectric layer. A through-hole penetrates the piezoelectric layer and reaches the air gap. A protrusion is provided in a region of an outer edge of the through-hole in the first major surface of the piezoelectric layer and is more protruded than a region where the through-hole is not provided.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness direction in a first direction, a piezoelectric layer on the support, and resonators each including a functional electrode provided to the piezoelectric layer. The support is provided with a hollow portion at a position overlapping at least a portion of each of the resonators in plan view in the first direction. The resonators include a first resonator and a second resonator adjacent to each other. A through hole reaching the hollow portion is provided to the piezoelectric layer between the first resonator and the second resonator.

Abstract: An acoustic wave device includes a support including a support substrate and an intermediate layer, a piezoelectric layer on or over the intermediate layer and including a through-hole, a functional electrode on the piezoelectric layer, and a hollow portion in the support substrate and the intermediate layer. At least a portion of the functional electrode overlaps the hollow portion. The hollow portion includes first and second hollow regions, the first hollow region being located in the intermediate layer and communicating with the through-hole, the second hollow region being located between the first hollow region and a bottom surface of a recess in the support substrate, the recess opening toward the first hollow region. The intermediate layer includes a portion protruding inward from a peripheral portion of the recess in the support substrate as viewed from a cross section in a thickness direction of the support.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

Abstract: An acoustic wave device includes a piezoelectric layer including first and second main surfaces opposed to each other, a functional electrode on at least one of the first and second main surfaces, and a support substrate on a second main surface side of the piezoelectric layer. A hollow portion is between the support substrate and the piezoelectric layer. The functional electrode at least partially overlaps the hollow portion when viewed in a laminating direction in which the support substrate and the piezoelectric layer are laminated. A through-hole extends through the piezoelectric layer to the hollow portion. A raised portion extending along a depth direction of the through-hole is on an inner wall of the through-hole.

Abstract: The present invention relates to a transparent substrate with a multilayer film including: a transparent substrate having two main surfaces; and a multilayer film obtained by laminating at least two or more layers having refractive indices different from each other, and disposed on or above at least one main surface of the transparent substrate, in which the multilayer film includes one or more silicon oxide layers, and at least one layer of the one or more silicon oxide layers has a refractive index of 1.460?n<1.478 at a wavelength of 550 nm.

Abstract: The present invention relates to an antiglare film-provided transparent substrate including: a transparent substrate having two major surfaces opposed to each other; and an antiglare film laminated to one of the two major surfaces, in which the major surfaces have a flat shape, and a longitudinal-direction diffusion value measured in a longitudinal direction of the major surface is larger than a short-direction diffusion value measured in a short direction of the major surface.

Abstract: The present invention relates to an antiglare film-provided transparent substrate including: a transparent substrate having two major surfaces opposed to each other; and an antiglare film laminated to one of the two major surfaces, in which the major surfaces have a flat shape, and a longitudinal-direction clarity value measured in a longitudinal direction of the major surface is larger than a short-direction clarity value measured in a short direction of the major surface.

Abstract: Provided is a socket for inspection that can correct inclination of a terminal in contact with a device under inspection to stabilize the terminal-to-electrode contact. The socket includes: a contact terminal having a barrel with a flange, a device side terminal, a test board side terminal, and a spring; a housing having a stepped hole through which the contact terminal is inserted and in which a step that abuts against the flange is axially formed; and a movable pedestal provided so as to move closer to and away from the housing and having a receiving hole through which a distal end side of the device side terminal projecting from the barrel is inserted and which receives an electrode of the device. A guide part whose inner diameter is substantially the same as the outer diameter of a projecting portion of the device side terminal is formed in the receiving hole.

Abstract: An acoustic wave device includes a support including support substrate and an intermediate layer on the support substrate, a piezoelectric layer on the intermediate layer, and an IDT electrode on the piezoelectric layer. A cavity portion is provided in the support. The piezoelectric layer includes a membrane portion overlapping the cavity portion in a plan view. At least a portion of the IDT electrode is in the membrane portion. A spacer layer is in the support and made of a material different from materials of the piezoelectric layer and the intermediate layer. The spacer layer is located in a portion other than the cavity portion.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers, the first electrode fingers extending in a second direction crossing the first direction, the second electrode fingers extending in the second direction and facing the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction, and a reinforcing film on the piezoelectric layer. The support substrate and the piezoelectric layer include a hollow therebetween at a position overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. The reinforcing film overlaps the hollow in the first direction.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, and an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers extending in a second direction crossing the first direction. The second electrode fingers face the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction. The support substrate and the piezoelectric layer include a hollow therebetween at a position at least partially overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. A reinforcing support extends inside the hollow in a region overlapping the hollow and not overlapping the first and second electrode fingers.

Abstract: An anti-reflective film-attached transparent substrate includes a transparent substrate having two main surfaces and, on at least one of the main surfaces, a multilayer film in which at least two layers having different refractive indices are laminated. At least one silicon oxide layer among the layers in the multilayer film has a moisture permeability of 300 g/m2/day or less.