Abstract: In a service providing system, a live-distribution service for live-distributing contents supplied according to a reservation, and a chat service for providing the use of a chat space corresponding to the reservation for the live distribution are provided. When a personal computer and another personal computer use the live-distribution service and the chat service, they need to be authenticated by a streaming server and a communication server. For authentication, both the streaming server and the communication server use a shared password registered in a reservation data base when the live distribution is reserved.

Abstract: The present invention is intended to provide a data providing system including a data providing apparatus having provision image data generating means for generating provision image data of a provision image which is reusable by inlaying a predetermined advertisement image into a predetermined template image into which a predetermined user image can be inlaid as superimposed upon the predetermined advertisement image and providing-side transmitting means for transmitting the provision image data via a network.

Abstract: In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

Abstract: A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

Abstract: The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.