Abstract: A pressure sensor includes a pressure detecting element; a base material on which the pressure detecting element is mounted; a pad electrode provided on the base material and electrically connected to the pressure detecting element; a ground electrode provided on the base material and spaced from the pad electrode; and a cap having a tubular shape, the cap surrounding a periphery of the pressure detecting element on the base material and being attached to the ground electrode with a conductive adhesive. An inner receiving section is provided between an inner peripheral surface of the cap and a ground-electrode-side end surface of the cap, the inner receiving section thereby preventing excessive spreading of the conductive adhesive. The cap can be attached to the base material with the conductive adhesive without causing excessive spreading of the conductive adhesive.

Abstract: A pressure sensor includes a pressure detecting element; a base material on which the pressure detecting element is mounted; a pad electrode provided on the base material and electrically connected to the pressure detecting element; a ground electrode provided on the base material and spaced from the pad electrode; and a cap having a tubular shape, the cap surrounding a periphery of the pressure detecting element on the base material and being attached to the ground electrode with a conductive adhesive. An inner receiving section is provided between an inner peripheral surface of the cap and a ground-electrode-side end surface of the cap, the inner receiving section thereby preventing excessive spreading of the conductive adhesive. The cap can be attached to the base material with the conductive adhesive without causing excessive spreading of the conductive adhesive.

Abstract: A physical quantity sensor detects a physical quantity using a piezoresistive effect and includes a first-conductivity-type well layer disposed on a first insulating layer, a plurality of second-conductivity-type piezoresistive layers disposed on a surface side of the first-conductivity-type well layer, and a second-conductivity-type isolation layer disposed between the plurality of second-conductivity-type piezoresistive layers so as to pass through the first-conductivity-type well layer from a surface of the first-conductivity-type well layer to a surface of the first insulating layer.

Abstract: A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.

Abstract: A physical quantity sensor includes an anchor portion, a movable portion displaceable in a height direction, a supporting portion rotatably connected to the anchor portion and the movable portion, and a detection portion. The supporting portion includes a first connection arm connecting the anchor portion and the movable portion to each other and a leg portion extending from the anchor portion in a direction opposite to the first connection arm, the leg portion being displaced in a direction opposite to a displacement direction of the movable portion when the supporting portion rotates. A stopper surface is disposed at a position to which a distal end portion of the leg portion is contactable when the leg portion is displaced in the direction opposite to the displacement direction of the movable portion. Displacement of the movable portion is restricted when the distal end portion of the leg portion contacts the stopper surface.

Abstract: A physical quantity sensor includes a support substrate, anchor portions fixed to a top surface of the support substrate, a movable portion positioned above the support substrate and supported by the anchor portions with support portions provided therebetween such that the movable portion is movable in a height direction, and detection portions for detecting a displacement of the movable portion. The support portions include beam portions provided between the movable portion and the anchor portions such that spring portions are provided between the beam portions and each of the movable portion and the anchor portions, the beam portions having a rigidity higher than a rigidity of the spring portions. The movable portion translates in the height direction owing to twisting of the spring portions and displacements in the height direction of distal ends of the beam portions, the movable portion being supported at the distal end.

Abstract: A MEMS sensor includes a first substrate; a second substrate; a movable electrode portion and a fixed electrode portion which are arranged between the first substrate and the second substrate, wherein: conductive supporting portions of the movable electrode portion and the fixed electrode portion are, respectively, fixedly secured to a surface of the first substrate via a first insulating layer; a second insulating layer, a lead layer buried into the second insulating layer, and connection electrode portions that are electrically connected to the lead layer to be individually connected to the conductive supporting portions are provided on a surface of the second substrate; a metallic connection layer is formed on the surface of one of the respective conductive supporting portions; one of the respective connection electrode portions and the metallic connection layer are bonded together by eutectic bonding or diffusion bonding; and, at least each of the connection electrode portions has a thickness of about 4 ?

Abstract: An MEMS sensor includes: a functional layer having a sensor section; a wiring substrate disposed facing the functional layer and having a conduction pathway for the sensor section; a first metal layer provided on the surface of the sensor section which faces the wiring substrate; and a second metal layer provided on the surface of the wiring substrate which faces the sensor section, wherein the first and second metal layers are joined to each other, a space is formed between a movable portion of the sensor section and the wiring substrate, and a stopper which is composed of a third metal layer being the same film as the first metal layer formed on the functional layer side and a contact portion formed on the wiring substrate side which come into contact with each other is formed between the functional layer and the wiring substrate.

Abstract: A physical quantity sensor includes an anchor portion, a movable portion displaceable in a height direction, a supporting portion rotatably connected to the anchor portion and the movable portion, and a detection portion. The supporting portion includes a first connection arm connecting the anchor portion and the movable portion to each other and a leg portion extending from the anchor portion in a direction opposite to the first connection arm, the leg portion being displaced in a direction opposite to a displacement direction of the movable portion when the supporting portion rotates. A stopper surface is disposed at a position to which a distal end portion of the leg portion is contactable when the leg portion is displaced in the direction opposite to the displacement direction of the movable portion. Displacement of the movable portion is restricted when the distal end portion of the leg portion contacts the stopper surface.

Abstract: A physical quantity sensor includes a support substrate, anchor portions fixed to a top surface of the support substrate, a movable portion positioned above the support substrate and supported by the anchor portions with support portions provided therebetween such that the movable portion is movable in a height direction, and detection portions for detecting a displacement of the movable portion. The support portions include beam portions provided between the movable portion and the anchor portions such that spring portions are provided between the beam portions and each of the movable portion and the anchor portions, the beam portions having a rigidity higher than a rigidity of the spring portions. The movable portion translates in the height direction owing to twisting of the spring portions and displacements in the height direction of distal ends of the beam portions, the movable portion being supported at the distal end.

Abstract: A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same diameter as the diameter of the cavity in the one silicon substrate and reducing the cavity diameter from the boundary portion toward the diaphragm center.

Abstract: A MEMS sensor includes a first substrate; a second substrate; a movable electrode portion and a fixed electrode portion which are arranged between the first substrate and the second substrate, wherein: conductive supporting portions of the movable electrode portion and the fixed electrode portion are, respectively, fixedly secured to a surface of the first substrate via a first insulating layer; a second insulating layer, a lead layer buried into the second insulating layer, and connection electrode portions that are electrically connected to the lead layer to be individually connected to the conductive supporting portions are provided on a surface of the second substrate; a metallic connection layer is formed on the surface of one of the respective conductive supporting portions; one of the respective connection electrode portions and the metallic connection layer are bonded together by eutectic bonding or diffusion bonding; and, at least each of the connection electrode portions has a thickness of about 4 ?

Abstract: Embodiments of the present disclosure are directed to a package having pressure sensor including a first substrate having a fixed electrode bonded to a second substrate having a movable electrode disposed at a predetermined interval from the fixed electrode, a support substrate with an opening for storing the second substrate, and a resin layer for fixing the pressure sensor and the support substrate. The pressure sensor may be packaged on the support substrate via the first substrate and a bonding member in a state where the second substrate is fit within the opening. The package for the pressure sensor may be sufficiently thin to be employed for the use on a minimum area.

Abstract: A package is mainly formed of a package body having a storage area for storing a pressure sensor, a capacity type pressure sensor stored in the storage area of the package body, a lid seals the package body in which the pressure sensor is stored, an adhesive agent for fixing the pressure sensor to the package body, and a bonding wire for electrically coupling a bonding pad of the pressure sensor and a conductive portion of the package body. An adhesive area of the package body and the pressure sensor is set to the area other than a projection area of the diaphragm of the pressure sensor on a mount bottom surface. This makes it possible to provide the package for the pressure sensor capable of detecting the pressure with high sensitivity although the gap between the substrate and the diaphragm has the value with the magnitude of several ?ms.

Abstract: A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.

Abstract: A magnetic detection device of a NS detection type is provided. A magnetic detection device comprising a first series circuit, a second series circuit, and a third series circuit. At least one of a plurality of resistance elements forming the first series circuit includes a first magneto-resistance element using a magneto-resistance effect, of which an electric resistance varies with an external magnetic field of any one direction. At least one of a plurality of resistance elements forming the second series circuit includes a second magneto-resistance element using a magneto-resistance effect, of which an electric resistance varies with an external magnetic field of a direction apposite to the one direction.

Abstract: A magnetic detection device includes a mode switching section capable of switching over a 1-output mode in which a (+) magnetic-field detected signal and a (?) magnetic-field detected signal are both outputted from a first external output terminal, and a 2-output mode in which the (+) magnetic-field detected signal and the (?) magnetic-field detected signal are outputted respectively from the first external output terminal and a second external output terminal. The provision of the mode switching section in an integrated circuit makes it possible to perform mode selection, in particular to realize the mode selection with a simple circuit configuration resulting in a reduction of the production cost.

Abstract: A capacitive pressure sensor is provided. The capacitive pressure sensor includes a glass substrate that has a pair of surfaces facing each other. A first silicon substrate has a fixed electrode passing through the glass substrate to be exposed at one surface and a projection passing through the glass substrate to be exposed at the one surface. A second silicon substrate is bonded to the one surface of the glass substrate and is disposed to face the fixed electrode so as to form a cavity between the second silicon substrate and the fixed electrode.

Abstract: A package is mainly formed of a package body having a storage area for storing a pressure sensor, a capacity type pressure sensor stored in the storage area of the package body, a lid seals the package body in which the pressure sensor is stored, an adhesive agent for fixing the pressure sensor to the package body, and a bonding wire for electrically coupling a bonding pad of the pressure sensor and a conductive portion of the package body. An adhesive area of the package body and the pressure sensor is set to the area other than a projection area of the diaphragm of the pressure sensor on a mount bottom surface. This makes it possible to provide the package for the pressure sensor capable of detecting the pressure with high sensitivity although the gap between the substrate and the diaphragm has the value with the magnitude of several ?ms.

Abstract: A capacitive pressure sensor and method of manufacturing the same is provided. The capactive pressure sensor includes a glass substrate that has a pair of surfaces opposite to each other. A recessed portion is provided to form a cavity on one of the pair of principal surfaces. A first protruding portion provided in the recessed portion. A first silicon substrate has a fixed electrode formed on the first protruding portion, and a movable electrode disposed with a predetermined interval between the fixed electrode and the movable electrode.