Abstract: A reactor for epitaxial growth wherein a susceptor on which semiconductor wafers are placed is heated by a heater, while rotating around a vertically provided gas feed pipe in a bell jar and a gas introduced through the gas feed pipe into the bell jar is decomposed to deposite a crystalline semiconductor material on the wafers, the susceptor having a plurality of pockets for positioning the wafers in which the pockets are arranged on the uniform temperature region of the susceptor other than the temperature-unstable peripheral portion thereof, thereby preventing production of defective products due to dislocation in crystal growth.