Abstract: A selection method includes: obtaining or providing multilayer ceramic capacitors each having a multilayer structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked; measuring a ratio of (a current value at 10 V/?m when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/?m when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to each multilayer ceramic capacitor; determining whether the ratio is in a predetermined range; and selecting a multilayer ceramic capacitor or multilayer ceramic capacitors each having a ratio in the predetermined range as a desired multilayer ceramic capacitor.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which dielectric layers and internal electrode layers are alternately stacked; wherein a main component of the dielectric layers is a ceramic material having a main phase having a perovskite structure (ABO3) wherein a B site includes an element solid-solved in the B site and acting as a donor; wherein an A site and the B site of the ceramic material includes a rare earth element, wherein (an amount of the rare earth element substitutionally solid-solved in the A site)/(an amount of the rare earth element substitutionally solid-solved in the B site) is 0.75 or more and 1.25 or less. The amount of the element acting as the donor in the B site is 0.05 to 0.3 atm % relative to a main component element of the B site.

Abstract: A selective film deposition method includes exposing a substrate having a structure on which a first surface region containing a metal element and a second surface region containing a nonmetal inorganic material are both exposed, to a solution containing an organic substance represented by formula (1) shown below and a solvent to deposit a film of the organic substance on the first surface region selectively over the second surface region: R1(X)m (1) wherein R1 is a C4-C100 hydrocarbon group optionally containing a heteroatom or a halogen atom, and m hydrogen atoms of the hydrocarbon group are replaced with X; X is —PO3(R2)2, —O—PO3(R2)2, —CO2R2, —SR2, or —SSR1; each R2 is a hydrogen atom or a C1-C6 alkyl group; and m is a positive integer, and m/r is 0.01 to 0.25 where r is the number of carbons of the hydrocarbon group.

Abstract: In an acoustic wave device, an IDT electrode is located on a piezoelectric layer. A high-acoustic-velocity member is positioned on an opposite side of the piezoelectric layer from the IDT electrode. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity member is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. A low-acoustic-velocity film is provided between the high-acoustic-velocity member and the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer. A dielectric film is located on the piezoelectric layer so as to cover the IDT electrode. In the acoustic wave device, a Young's modulus of the dielectric film is larger than a Young's modulus of the low-acoustic-velocity film.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which dielectric layers and internal electrode layers are alternately stacked; wherein a main component of the dielectric layers is a ceramic material having a main phase having a perovskite structure (ABO3) wherein a B site includes an element solid-solved in the B site and acting as a donor; wherein an A site and the B site of the ceramic material includes a rare earth element, wherein (an amount of the rare earth element substitutionally solid-solved in the A site)/(an amount of the rare earth element substitutionally solid-solved in the B site) is 0.75 or more and 1.25 or less. The amount of the element acting as the donor in the B site is 0.05 to 0.3 atm % relative to a main component element of the B site.

Abstract: Ceramic raw material powder includes: a main phase having a perovskite structure, wherein elements acting as a donor and an acceptor are solid-solved in B sites of the perovskite structure, wherein a first relationship of value A<value B is satisfied in a center region of each grain of the ceramic raw material powder; a second relationship of value A>value B is satisfied in a circumference region of each grain of the ceramic raw material powder, and value A in the second relationship gradually decreases from the circumference region to the center, wherein value A is a value of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4), and value B is a value of (concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor).

Abstract: A multilayer ceramic electronic device includes a multilayer chip. The multilayer chip has a capacity section and a side margin. The side margin includes boron and silicon, and includes a first section and a second section in order from the capacity section side toward outside. A boron concentration of the first section is larger than a boron concentration of the second section. A segregation degree of silicon in the second section is larger than a segregation degree of silicon in the first section.

Abstract: An airtightness evaluation device includes a differential pressure gauge to output a pressure difference between two spaces connected to two joints. A system joint for connecting a refrigeration cycle system is connected to one joint of the differential pressure gauge. A pressure vessel is connected to the other joint of the differential pressure gauge. The airtightness evaluation device includes a bypass circuit to connect the system joint and the pressure vessel to each other with bypassing the differential pressure gauge, and a bypass valve to open/close the bypass circuit. The airtightness evaluation device also includes a supply source joint for supplying a pressurization gas to the pressure vessel.

Abstract: A refrigeration cycle apparatus comprises a refrigerant circuit, a water circuit, and a control device. The refrigerant circuit includes a compressor, a four-way valve, a heat exchanger, a fan, a diaphragm mechanism, a water heat exchanger, and an accumulator. Based on a value of a low-pressure sensor or a high-pressure sensor and a water temperature on an outlet side of the water heat exchanger, the refrigeration cycle apparatus determines whether or not there is an abnormality due to dirtiness adhered to a plate inside the water heat exchanger.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, wherein a concentration of a rare earth element in an active region with respect to a main component ceramic of the active region is equal to or more than a concentration of a rare earth element in at least a part of a protective region with respect to a main component ceramic of the protective region, wherein an average ionic radius of the rare earth element of the at least a part of the protective region is equal to or less than an average ionic radius of the rare earth element in the active region.

Abstract: A selection method includes: obtaining or providing multilayer ceramic capacitors each having a multilayer structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked; measuring a ratio of (a current value at 10 V/?m when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/?m when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to each multilayer ceramic capacitor; determining whether the ratio is in a predetermined range; and selecting a multilayer ceramic capacitor or multilayer ceramic capacitors each having a ratio in the predetermined range as a desired multilayer ceramic capacitor.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, wherein a concentration of a rare earth element in an active region with respect to a main component ceramic of the active region is equal to or more than a concentration of a rare earth element in at least a part of a protective region with respect to a main component ceramic of the protective region, wherein an average ionic radius of the rare earth element of the at least a part of the protective region is equal to or less than an average ionic radius of the rare earth element in the active region.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, wherein a concentration of a rare earth element in an active region with respect to a main component ceramic of the active region is equal to or more than a concentration of a rare earth element in at least a part of a protective region with respect to a main component ceramic of the protective region, wherein an average ionic radius of the rare earth element of the at least a part of the protective region is equal to or less than an average ionic radius of the rare earth element in the active region.

Abstract: Ceramic raw material powder includes: a main phase having a perovskite structure, wherein elements acting as a donor and an acceptor are solid-solved in B sites of the perovskite structure, wherein a first relationship of value A<value B is satisfied in a center region of each grain of the ceramic raw material powder; a second relationship of value A>value B is satisfied in a circumference region of each grain of the ceramic raw material powder, and value A in the second relationship gradually decreases from the circumference region to the center, wherein value A is a value of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4), and value B is a value of (concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor).

Abstract: Ceramic raw material powder includes: a main phase having a perovskite structure, wherein elements acting as a donor and an acceptor are solid-solved in B sites of the perovskite structure, wherein a relationship of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4)<(concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor) is satisfied, in a center region of each grain of the ceramic raw material powder, wherein a relationship of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4)>(concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor) is satisfied, in a circumference region of each grain of the ceramic raw material powder.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which dielectric layers and internal electrode layers are alternately stacked; wherein a main component of the dielectric layers is a ceramic material having a main phase having a perovskite structure (ABO3) wherein a B site includes an element solid-solved in the B site and acting as a donor; wherein an A site and the B site of the ceramic material includes a rare earth element, wherein (an amount of the rare earth element substitutionally solid-solved in the A site)/(an amount of the rare earth element substitutionally solid-solved in the B site) is 0.75 or more and 1.25 or less. The amount of the element acting as the donor in the B site is 0.05 to 0.3 atm % relative to a main component element of the B site.

Abstract: A ceramic raw material powder includes: ceramic particles having a perovskite structure containing barium, a mean particle diameter of the ceramic particles being 80 nm or greater and 150 nm or less; and chlorine, wherein a concentration of the chlorine to a B site element of the ceramic particles is 0.2 atm % or greater and 1.1 atm % or less.

Abstract: A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of internal electrode layers are alternately stacked; wherein a main component of the dielectric layers is a ceramic material, wherein a main phase of the ceramic material has a perovskite structure expressed by a general formula ABO3, wherein a B site of the ceramic material includes an element acting as a donor; wherein an A site and the B site of the ceramic material includes a rare earth element, wherein (an amount of the rare earth element substitutionally solid-solved in the A site)/(an amount of the rare earth element substitutionally solid-solved in the B site) is 0.75 or more and 1.25 or less.

Abstract: A ceramic electronic device includes: a multilayer structure; and a cover layer, wherein a concentration of Mn of the cover layer with respect to a main component ceramic is larger than a concentration of Mn of the dielectric layers with respect to a main component ceramic in a capacity section, wherein an average crystal grain diameter of a first dielectric layer is smaller than that of a second dielectric layer, and a concentration of Mn of the first dielectric layer with respect to the main component ceramic is larger than a concentration of Mn of the second dielectric layer with respect to the main component ceramic, in the capacity section.

Abstract: Ceramic raw material powder includes: a main phase having a perovskite structure, wherein elements acting as a donor and an acceptor are solid-solved in B sites of the perovskite structure, wherein a relationship of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4)<(concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor) is satisfied, in a center region of each grain of the ceramic raw material powder, wherein a relationship of (concentration of the element acting as a donor)×(valence of the element acting as a donor?4)>(concentration of the element acting as an acceptor)×(4?valence of the element acting as an acceptor) is satisfied, in a circumference region of each grain of the ceramic raw material powder.