Abstract: This invention relates to a process for producing an oxime comprising reacting a ketone and hydroxylamine in the presence of a carboxylic acid and/or its salt in a system consisting of an aqueous phase and a hydrophobic solvent phase.

Abstract: This invention relates to a process for producing an oxime comprising reacting a ketone and hydroxylamine in the presence of a carboxylic acid and/or its salt in a system consisting of an aqueous phase and a hydrophobic solvent phase.

Abstract: A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matter and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber.

Abstract: The present invention relates to a microwave plasma processing apparatus, suited for generating a plasma by using microwaves, and a processing method. Microwaves propagated through a circular waveguide are tuned in the space thereof by a microwave tuner that is installed to match the impedance, and are introduced in a uniform and most efficient state into a discharge block having a plasma-resistant inner surface that is enlarged in a tapered form through a microwave introduction window. Then, a processing gas controlled to a predetermined pressure by a gas supplying structure and gas evacuating structure is turned into a plasma which is more uniform and is more dense by interaction of a microwave electric field that is efficiently introduced and a magnetic field produced by a solenoid coil.

Abstract: The present invention improves ashing speed for a treated object and ashing speed uniformity over the treated object by improving microwave transmission efficiency and by generating uniform and strong plasma in a plasma generating chamber. According to the present invention, the microwave treatment apparatus comprises expanding wave guide tubes having an expanded room of a given size on the microwave inlet side of a microwave inlet window 9 which forms a plasma generating chamber, and a partition board with a hole having an aspect ratio other than one in the room. Therewith, a microwave resonant space is formed with interposing the partition board inside the space of the expanded wave guide tube to generate a uniform and strong electric field inside the space of the expanded wave guide tube, and then the microwave is injected into the plasma generating chamber through the microwave inlet window to generate uniform and strong plasma in the plasma generating chamber.

Abstract: The present invention relates to a plasma treating method and apparatus therefor, the plasma treating method comprising the steps of supplying a liquid refrigerant whose temperature is not higher than 0.degree. C. into a specimen table having a specimen place surface, cooling a specimen placed on the specimen place surface, treating the cooled specimen utilizing a gas plasma, and recovering the liquid refrigerant, in its liquid state, retained in the specimen table from the specimen table. The plasma treating apparatus comprised means for producing a gas plasma, a specimen table on which is placed a specimen to be treated utilizing the gas plasma and interiorly formed with a space for retaining a liquid refrigerant whose temperature is not higher than 0.degree. C.

Abstract: The present invention relates to a method of and apparatus for detecting an end point of plasma treatment of a specimen.

Abstract: The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C.

Abstract: This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

Abstract: Herein disclosed are a plasma treating method and an apparatus therefor. The plasma treating method comprises: the step of monitoring the energies of plasmas corresponding to the faces of a plurality of samples to be treated; the step of adjusting to equalize the energies of said plasmas on the basis of the monitored values; and the step simultaneously treating said samples with the plasmas having said equalized energies. The plasma treating apparatus comprises: a plurality of sample electrodes disposed independently of one another in positions opposed to an opposed electrode in a treating chamber evacuated to be supplied with a treating gas; power supply means for applying and adjusting electric power to said sample electrodes; and monitor means for monitoring the energies of plasmas to be generated between said opposed electrode and said sample electrodes.