Abstract: The present invention is a method for producing an epitaxial wafer forming a single crystal silicon layer on a single crystal silicon wafer, comprising, a step of removing native oxide film on surface of the single crystal silicon wafer with hydrofluoric acid, a step of forming an oxygen atomic layer on the surface of the single crystal silicon wafer from which the native oxide film has been removed, a step of epitaxially growing the single crystal silicon layer on the surface of the single crystal silicon wafer on which the oxygen atomic layer is formed, wherein the plane concentration of oxygen in the oxygen atomic layer is 1×1015 atoms/cm2 or less. As a result, a method for producing an epitaxial wafer, that an oxygen atomic layer can be stably and simply introduced into an epitaxial layer, and having a good-quality single crystal silicon epitaxial layer is provided.

Abstract: An internal device (1) is implanted in a living body (300). A control section (6) causes a communication section (5) to wirelessly transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through a group of N (N is 2 or more) electrodes, to an external device (200). When the communication section (5) receives a designation signal designating a group of M electrode(s) (2a), M being smaller than N, the communication section (5) is caused to transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through the group of M electrode(s) (2a), to the external device (200) in real time.

Abstract: According to an embodiment, an information processing apparatus includes one or more hardware processors configured to calculate a prediction value of an amount of electric power consumed for a movement to be predicted, based on a prediction model in which the amount of electric power consumed by a moving object is an objective variable, one or more factor values that affect the amount of electric power consumed for the movement of the moving object to be predicted, and an error between the prediction value obtained by the prediction model and an actual measured value.

Abstract: A fluid balance management system includes: a detection device configured to output a detection signal corresponding to a load applied to a bed in which a subject is present; a prediction device configured to acquire load variation information indicating a variation over time of the load based on the detection signal, and predict an event that causes variation in fluid balance of the subject from the load variation information; and an output device configured to output prediction information corresponding to a prediction result of the event.

Abstract: A method for manufacturing an epitaxial wafer by forming a single crystal silicon layer on a wafer containing a group IV element including silicon, the method including the steps of: removing a natural oxide film on a surface of the wafer containing the group IV element including silicon in an atmosphere containing hydrogen; forming an oxygen atomic layer by oxidizing the wafer after removing the natural oxide film; and forming a single crystal silicon by epitaxial growth on the surface of the wafer after forming the oxygen atomic layer, where a planar density of oxygen in the oxygen atomic layer is set to 4×1014 atoms/cm2 or less. A method for manufacturing an epitaxial wafer having an epitaxial layer of good-quality single crystal silicon while also allowing the introduction of an oxygen atomic layer in an epitaxial layer stably and simply.

Abstract: A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

Abstract: The present invention provides a thermal radiation light source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal radiation light source 10 includes a thermo-optical converter made of an optical structure in which a refractive index distribution is formed in a member 11 made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength ?r in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal radiation light.

Abstract: A device forming method including: forming a diffusion layer by ion-implanting a dopant into a silicon single crystal substrate; and activating the diffusion layer by laser annealing. When the silicon single crystal substrate to be used has an oxygen concentration of less than 5 ppma in a region for forming the diffusion layer, the device forming method includes a step of controlling the region for forming the diffusion layer to have an oxygen concentration of 5 ppma or more before the diffusion layer is activated by the laser annealing. A device forming method capable of easily enhancing dopant activation level by laser annealing even when a region for forming a diffusion layer has a low oxygen concentration.

Abstract: A device forming method including: forming a diffusion layer by ion-implanting a dopant into a silicon single crystal substrate; and activating the diffusion layer by laser annealing. When the silicon single crystal substrate to be used has an oxygen concentration of less than 5 ppma in a region for forming the diffusion layer, the device forming method includes a step of controlling the region for forming the diffusion layer to have an oxygen concentration of 5 ppma or more before the diffusion layer is activated by the laser annealing. A device forming method capable of easily enhancing dopant activation level by laser annealing even when a region for forming a diffusion layer has a low oxygen concentration.

Abstract: An internal device of a brain-machine interface system includes: an electrode group including N electrodes, N being 2 or more; an amplification element group including N amplification elements; a communicator communicating with an external device; and a controller selectively executing one of: a normal operation mode in which electroencephalogram signals acquired through the N electrodes are supplied to the amplification element group in a manner that each of the N electrodes corresponds to a respective one of the N amplification elements, and N amplified electroencephalogram signals are transmitted; and a noise-reduction operation mode in which an electroencephalogram signal acquired through an M electrode of the electrode group is supplied to the amplification element group in a manner that each M electrode corresponds to respective plural ones of the amplification elements, and an M amplified electroencephalogram signal is transmitted, M being smaller than N.

Abstract: An internal device (1) is implanted in a living body (300). A control section (6) causes a communication section (5) to wirelessly transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through a group of N (N is 2 or more) electrodes, to an external device (200). When the communication section (5) receives a designation signal designating a group of M electrode(s) (2a), M being smaller than N, the communication section (5) is caused to transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through the group of M electrode(s) (2a), to the external device (200) in real time.

Abstract: A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

Abstract: Provided is a railway vehicle bearing abnormality sensing system that can accurately perform abnormality determination for railway vehicle bearings. The system (100) senses an abnormality in a plurality of rolling bearings (17) housed in an axle box (3) provided to a bogie (2). The system (100) includes: vibration detection devices (15) each detecting vibration of a rolling bearing; an analysis device (6) determining an abnormality in the bearings (17) on the basis of detection data detected by the device (15); and reception response detection start module (13) receiving a detection start signal and cause the device (15) to detect vibration of the rolling bearing. The system (100) further includes a measurement start command transmitting device (4), installed apart from a railway vehicle, transmitting the detection start signal to the module (13).

Abstract: A blood pressure measuring apparatus, which measures a blood pressure of a living body, includes: a cuff-pressure control unit which controls a cuff pressure of a cuff that presses a part of the living body; an oscillation signal detection unit which detects an oscillation signal from the cuff pressure; a blood pressure specification unit which specifies systolic and diastolic blood pressures as the blood pressure of the living body from the oscillation signal; and a blood pressure determination unit which determines whether systolic and diastolic blood pressures are appropriate or not.

Abstract: A method for manufacturing a silicon wafer having a denuded zone in a surface layer by performing a heat treatment to a silicon wafer, including: a step A, performing a first rapid heat treatment of 0.01 msec or more and 100 msec or less to an upper surface layer alone of the silicon wafer to be treated at 1300° C. or more and a silicon melting point or less by using a first heat source which heats the silicon wafer to be treated from above; and a step B, holding the silicon wafer to be treated at 1100° C. or more and less than 1300° C. for one second or more and 100 seconds or less by a second rapid heat treatment using a second heat source which heats the silicon wafer to be heated, and decreasing the temperature at a falling rate of 30° C./sec or more and 150° C./sec or less.

Abstract: A machining system capable of preventing mist from leaking out from an enclosure to the outside. The machining system includes a first enclosure including an opening and configured to define a first space in which a workpiece is processed, a second enclosure arranged adjacent to the first enclosure and configured to define a second space communicating with the first space through the opening, wherein a robot which can advance to and retreat from the first space through the opening is installed in the second space, and a pressure adjustment device configured to increase a pressure in the second space higher than a pressure in the first space.

Abstract: A method for manufacturing a silicon wafer having a denuded zone in a surface layer by performing a heat treatment to a silicon wafer, including: a step A, performing a first rapid heat treatment of 0.01 msec or more and 100 msec or less to an upper surface layer alone of the silicon wafer to be treated at 1300° C. or more and a silicon melting point or less by using a first heat source which heats the silicon wafer to be treated from above; and a step B, holding the silicon wafer to be treated at 1100° C. or more and less than 1300° C. for one second or more and 100 seconds or less by a second rapid heat treatment using a second heat source which heats the silicon wafer to be heated, and decreasing the temperature at a falling rate of 30° C./sec or more and 150° C./sec or less.

Abstract: An internal device of a brain-machine interface system includes: an electrode group including N electrodes, N being 2 or more; an amplification element group including N amplification elements; a communicator communicating with an external device; and a controller selectively executing one of: a normal operation mode in which electroencephalogram signals acquired through the N electrodes are supplied to the amplification element group in a manner that each of the N electrodes corresponds to a respective one of the N amplification elements, and N amplified electroencephalogram signals are transmitted; and a noise-reduction operation mode in which an electroencephalogram signal acquired through an M electrode of the electrode group is supplied to the amplification element group in a manner that each M electrode corresponds to respective plural ones of the amplification elements, and an M amplified electroencephalogram signal is transmitted, M being smaller than N.

Abstract: A measuring unit which is to be attached to a cell culture container configured to accommodate cells to be cultured and a culture solution, includes: a measurer which is configured to measure information related to the cells and the culture solution, in a non-contact manner; and a sensor which is configured to detect at least one of a position, a posture, an impact, an orientation, and vibration.

Abstract: Provided is a railway vehicle bearing abnormality sensing system that can accurately perform abnormality determination for railway vehicle bearings. The system (100) senses an abnormality in a plurality of rolling bearings (17) housed in an axle box (3) provided to a bogie (2). The system (100) includes: vibration detection devices (15) each detecting vibration of a rolling bearing; an analysis device (6) determining an abnormality in the bearings (17) on the basis of detection data detected by the device (15); and reception response detection start module (13) receiving a detection start signal and cause the device (15) to detect vibration of the rolling bearing. The system (100) further includes a measurement start command transmitting device (4), installed apart from a railway vehicle, transmitting the detection start signal to the module (13).