Patents by Inventor Katsuyuki Machida
Katsuyuki Machida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030056725Abstract: Prior to the start of transfer of an insulation film to a substrate, the degree of opening of a butterfly valve is set small so that evaporation of a solvent component contained in the insulation film is suppressed and the fluidity of the insulation film is ensured at the start of the transfer. On the other hand, the butterfly valve is totally opened at the start of the transfer, so that the pressure inside a thin film forming chamber rapidly decreases and transfer of the insulation film to the substrate is performed always in a low-pressure state (high-degree of vacuum).Type: ApplicationFiled: September 18, 2002Publication date: March 27, 2003Applicant: Dainippon Screen Mfg. Co., Ltd.Inventors: Tsutomu Ueyama, Izuru Iseki, Norio Sato, Katsuyuki Machida, Hakaru Kyuragi
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Patent number: 6518083Abstract: A surface shape recognition sensor includes a plurality of capacitive detection elements, a support electrode, and a protective film. The capacitive detection elements are formed from lower electrodes and a deformable plate-like upper electrode made of a metal. The lower electrodes are insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate. The upper electrode is laid out above the lower electrodes at a predetermined interval and has a plurality of opening portions. The support electrode is laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode. The protective film is formed on the upper electrode to close the opening portions. The opening portions of the upper electrode are laid out in a region other than regions on a main part of the lower electrode and on the support electrode.Type: GrantFiled: January 30, 2002Date of Patent: February 11, 2003Assignee: Nippon Telegraph and Telephone CorporationInventors: Norio Sato, Katsuyuki Machida, Satoshi Shigematsu, Hiroki Morimura, Hakaru Kyuragi
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Publication number: 20020181748Abstract: A calibration mode signal line to which sensor cells are commonly connected is arranged. In a calibration mode, a calibration mode signal is supplied to the sensor cells through the calibration mode signal line to designate calibration. In each sensor cell, when the calibration mode signal is being supplied from the calibration mode signal line, and the sensor cell is selected by the decoder, calibration operation of adjusting the detection sensitivity of a sensor circuit is executed using a calibration circuit.Type: ApplicationFiled: May 7, 2002Publication date: December 5, 2002Inventors: Hiroki Morimura, Toshishige Shimamura, Satoshi Shigematsu, Katsuyuki Machida, Hakaru Kyuragi
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Patent number: 6468895Abstract: In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.Type: GrantFiled: April 3, 2001Date of Patent: October 22, 2002Assignee: Nippon Telegraph and Telephone CorporationInventors: Hiromu Ishii, Shouji Yagi, Katsuyuki Machida, Kunio Saito, Tadao Nagatsuma, Hakaru Kyuragi
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Publication number: 20020121909Abstract: A surface shape recognition sensor includes a plurality of capacitive detection elements, a support electrode, a protective film, and a plurality of projections. The capacitive detection elements are formed from lower electrodes and a deformable plate-like upper electrode made of a metal. The lower electrodes are insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate. The upper electrode is laid out above the lower electrodes at a predetermined interval and has a plurality of opening portions. The support electrode is laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode. The protective film is formed on the upper electrode to close the opening portions. The projections are laid out in a region of the protective film above the capacitive detection element.Type: ApplicationFiled: January 18, 2002Publication date: September 5, 2002Inventors: Norio Sato, Katsuyuki Machida, Hakaru Kyuragi, Satoshi Shigematsu, Hiroki Morimura, Hiromu Ishii, Toshishige Shimamura
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Patent number: 6438257Abstract: A small capacitance change detection device includes a capacitance detection element, signal generation circuit, signal amplification circuit, and output circuit. The signal amplification circuit includes a first transistor and first to third voltage sources. The second or third voltage source is connected to the other output terminal of the first transistor via a first switch. A voltage to be applied from the second voltage source to the other output terminal is set to have a value equal to or larger than a value obtained by subtracting a threshold voltage of the first transistor from a voltage of the first voltage source while a voltage to be applied from the third voltage source to the other output terminal is set to have a value equal to or smaller than a value obtained by subtracting the threshold voltage from the voltage of the first voltage source.Type: GrantFiled: July 2, 1999Date of Patent: August 20, 2002Assignee: Nippon Telegraph and Telephone CorporationInventors: Hiroki Morimura, Satoshi Shigematsu, Katsuyuki Machida, Akihiko Hirata
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Publication number: 20020109137Abstract: A surface shape recognition sensor includes a plurality of capacitive detection elements, a support electrode, and a protective film. The capacitive detection elements are formed from lower electrodes and a deformable plate-like upper electrode made of a metal. The lower electrodes are insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate. The upper electrode is laid out above the lower electrodes at a predetermined interval and has a plurality of opening portions. The support electrode is laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode. The protective film is formed on the upper electrode to close the opening portions. The opening portions of the upper electrode are laid out in a region other than regions on a main part of the lower electrode and on the support electrode.Type: ApplicationFiled: January 30, 2002Publication date: August 15, 2002Inventors: Norio Sato, Katsuyuki Machida, Satoshi Shigematsu, Hiroki Morimura, Hakaru Kyuragi
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Publication number: 20020095588Abstract: An authentication token includes a personal collation unit and communication unit. The personal collation unit includes a sensor, storage unit, and collation unit. The sensor detects biometrical information of a user and outputs the detection result as sensing data. The storage unit stores in advance registered data to be collated with the biometrical information of the user. The collation unit collates the registered data with the sensing data and outputs the collation result as authentication data. The communication unit transmits the authentication data from the personal collation unit to the use device as communication data. The personal collation unit and communication unit are integrated.Type: ApplicationFiled: May 11, 2001Publication date: July 18, 2002Inventors: Satoshi Shigematsu, Kenichi Saito, Katsuyuki Machida, Takahiro Hatano, Hakaru Kyuragi, Hideyuki Unno, Hiroki Suto, Mamoru Nakanishi, Koji Fujii, Hiroki Morimura, Toshishige Shimamura, Takuya Adachi, Namiko Ikeda
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Publication number: 20020017136Abstract: A small shape recognizing capacitive sensor device includes detection elements, sensor circuits, and a correction circuit. The detection elements are arranged adjacent to each other. The sensor circuits are connected to the detection elements, respectively. The correction circuit corrects the output signal level of the sensor circuit. The output signal level correction circuit includes a calibration circuit, calibration reference signal generation circuit, and comparison circuit. The calibration circuit is connected to the output side of the sensor circuit. The calibration reference signal generation circuit generates a calibration reference signal. The comparison circuit compares the output from the sensor circuit with the calibration reference signal and supplies the difference output to the calibration circuit as a control signal.Type: ApplicationFiled: June 8, 2001Publication date: February 14, 2002Inventors: Hiroki Morimura, Satoshi Shigematsu, Katsuyuki Machida, Hakaru Kyuragi, Toshishige Shimamura
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Patent number: 6340641Abstract: The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.Type: GrantFiled: April 29, 1999Date of Patent: January 22, 2002Assignees: Catalysts & Chemicals Industries Co., Ltd., Nippon Telegraph and Telephone CorporationInventors: Ryo Muraguchi, Akira Nakashima, Atsushi Tonai, Michio Kimatsu, Katsuyuki Machida, Hakaru Kyuragi, Kazuo Imai
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Publication number: 20020006233Abstract: An image collation apparatus includes a collation unit, minimum coincidence ratio extraction unit, and determination unit. The collation unit obtains a coincidence ratio between first and second images within a printing element range for each collation unit by collating the first and second images with each other. The minimum coincidence ratio extraction unit obtains a minimum coincidence ratio from coincidence ratios obtained from the collation unit. The determination unit determines that the first and second images are identical, if the extracted minimum coincidence ratio is smaller than a predetermined threshold. An image collation method is also disclosed.Type: ApplicationFiled: June 6, 2001Publication date: January 17, 2002Inventors: Takuya Adachi, Satoshi Shigematsu, Takahiro Hatano, Mamoru Nakanishi, Katsuyuki Machida
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Publication number: 20010027019Abstract: In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.Type: ApplicationFiled: April 3, 2001Publication date: October 4, 2001Inventors: Hiromu Ishii, Shouji Yagi, Katsuyuki Machida, Kunio Saito, Tadao Nagatsuma, Hakaru Kyuragi
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Patent number: 6248655Abstract: A surface shape recognition sensor of this invention includes at least a plurality of capacitance detection elements having sensor electrodes arranged in the same plane on an interlevel dielectric film formed on a semiconductor substrate to be insulated/isolated from each other, capacitance detection means for detecting the capacitances of the capacitance detection elements, and a stationary electrode disposed on the interlevel dielectric film to be insulated/isolated from the sensor electrodes. When an object to be recognized touches the upper surface of the stationary electrode, the capacitances detected by the capacitance detection elements change in accordance with the recesses/projections on the upper surface.Type: GrantFiled: February 29, 2000Date of Patent: June 19, 2001Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Satoshi Shigematsu, Hiroki Morimura, Akihiko Hirata
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Patent number: 6232216Abstract: In this thin film forming method, a first thin film is formed on a semiconductor substrate having the step height by chemical vapor deposition using a high density plasma. A base member on which a second thin film is formed is placed on the semiconductor substrate such that the first and second thin films oppose each other. The semiconductor substrate is heated to a first temperature to form the second thin film on the first thin film. The base member is peeled off from the second thin film. The second thin film formed on the first thin film is heated to a second temperature higher than the first temperature.Type: GrantFiled: April 11, 1997Date of Patent: May 15, 2001Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Hakaru Kyuragi, Hideo Akiya
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Patent number: 6092578Abstract: A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.Type: GrantFiled: February 19, 1998Date of Patent: July 25, 2000Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Hakaru Kyuragi, Hideo Akiya, Kazuo Imai
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Patent number: 6086699Abstract: Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus.Type: GrantFiled: May 14, 1998Date of Patent: July 11, 2000Assignees: Catalysts & Chemicals Industries Co., Ltd., Nippon Telegraph and Telephone CorporationInventors: Akira Nakashima, Atsushi Tonai, Ryo Muraguchi, Michio Komatsu, Katsuyuki Machida, Hakaru Kyuragi, Kazuo Imai
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Patent number: 6060756Abstract: A surface shape recognition sensor of this invention includes at least a plurality of capacitance detection elements having sensor electrodes arranged in the same plane on an interlevel dielectric film formed on a semiconductor substrate to be insulated/isolated from each other, capacitance detection means for detecting the capacitances of the capacitance detection elements, and a stationary electrode disposed on the interlevel dielectric film to be insulated/isolated from the sensor electrodes. When an object to be recognized touches the upper surface of the stationary electrode, the capacitances detected by the capacitance detection elements change in accordance with the recesses/projections on the upper surface.Type: GrantFiled: March 5, 1999Date of Patent: May 9, 2000Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Satoshi Shigematsu, Hiroki Morimura, Akihiko Hirata
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Patent number: 5972780Abstract: A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.Type: GrantFiled: August 15, 1997Date of Patent: October 26, 1999Assignee: Nippon Telegraph Telephone CorporationInventors: Katsuyuki Machida, Hakaru Kyuragi, Hideo Akiya, Kazuo Imai
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Patent number: 5811872Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.Type: GrantFiled: January 31, 1996Date of Patent: September 22, 1998Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Katsumi Murase, Nobuhiro Shimoyama, Toshiaki Tsuchiya, Junichi Takahashi, Kazushige Minegishi, Yasuo Takahashi, Hideo Namatsu, Kazuo Imai
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Patent number: 5674771Abstract: A structure of a capacitor includes a first metal interconnection layer, a dielectric film, and a second metal interconnection layer. The dielectric film is formed on the first metal interconnection layer. The second metal interconnection layer is formed on the dielectric film. The dielectric film is a dielectric film formed by bias-ECR plasma CVD.Type: GrantFiled: March 22, 1993Date of Patent: October 7, 1997Assignee: Nippon Telegraph and Telephone CorporationInventors: Katsuyuki Machida, Kazuo Imai, Hideo Yoshino, Yoshiharu Ozaki, Kenji Miura