Patents by Inventor Katsuyuki Sakurano
Katsuyuki Sakurano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11796650Abstract: A light receiver includes a plurality of photoelectric conversion portions each of which includes a photoelectric conversion element configured to receive light, and a pulse generator configured to generate a pulse signal corresponding to an amount of light received by the photoelectric conversion element. The light receiver includes a plurality of bit counters each of which is configured to count the pulse signal of the pulse generator, and the plurality of bit counters are dispersed in the plurality photoelectric conversion portions.Type: GrantFiled: December 28, 2020Date of Patent: October 24, 2023Assignee: RICOH COMPANY, LTD.Inventors: Katsuyuki Sakurano, Toshiki Yamanaka
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Publication number: 20210270939Abstract: A light receiver includes a plurality of photoelectric conversion portions each of which includes a photoelectric conversion element configured to receive light, and a pulse generator configured to generate a pulse signal corresponding to an amount of light received by the photoelectric conversion element. The light receiver includes a plurality of bit counters each of which is configured to count the pulse signal of the pulse generator, and the plurality of bit counters are dispersed in the plurality photoelectric conversion portions.Type: ApplicationFiled: December 28, 2020Publication date: September 2, 2021Applicant: Ricoh Company, Ltd.Inventors: Katsuyuki SAKURANO, Toshiki YAMANAKA
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Patent number: 10298869Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.Type: GrantFiled: June 21, 2016Date of Patent: May 21, 2019Assignee: RICOH COMPANY, LTD.Inventors: Katsuhiko Aisu, Yasukazu Nakatani, Kazuhiro Yoneda, Takaaki Negoro, Yoshinori Ueda, Katsuyuki Sakurano
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Patent number: 10078010Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.Type: GrantFiled: December 22, 2015Date of Patent: September 18, 2018Assignee: RICOH COMPANY, LTD.Inventors: Katsuhiko Aisu, Hirofumi Watanabe, Takaaki Negoro, Yoshinori Ueda, Yasukazu Nakatani, Kazuhiro Yoneda, Katsuyuki Sakurano
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Patent number: 9923019Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.Type: GrantFiled: November 9, 2015Date of Patent: March 20, 2018Assignee: RICOH COMPANY, LTD.Inventors: Takaaki Negoro, Yoshinori Ueda, Katsuyuki Sakurano, Yasukazu Nakatani, Kazuhiro Yoneda, Katsuhiko Aisu
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Patent number: 9871984Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.Type: GrantFiled: July 1, 2015Date of Patent: January 16, 2018Assignee: RICOH COMPANY, LTD.Inventors: Kazuhiro Yoneda, Hirofumi Watanabe, Takaaki Negoro, Katsuhiko Aisu, Yasukazu Nakatani, Katsuyuki Sakurano
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Patent number: 9762822Abstract: An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.Type: GrantFiled: August 20, 2014Date of Patent: September 12, 2017Assignee: RICOH COMPANY, LTD.Inventors: Takaaki Negoro, Hirofumi Watanabe, Katsuhiko Aisu, Kazuhiro Yoneda, Katsuyuki Sakurano
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Patent number: 9749566Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.Type: GrantFiled: March 9, 2015Date of Patent: August 29, 2017Assignee: RICOH COMPANY, LTD.Inventors: Kazuhiro Yoneda, Hirofumi Watanabe, Takaaki Negoro, Katsuhiko Aisu, Yasukazu Nakatani, Katsuyuki Sakurano
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Publication number: 20170006246Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.Type: ApplicationFiled: June 21, 2016Publication date: January 5, 2017Applicant: Ricoh Company, Ltd.Inventors: Katsuhiko AISU, Yasukazu NAKATANI, Kazuhiro YONEDA, Takaaki NEGORO, Yoshinori UEDA, Katsuyuki SAKURANO
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Patent number: 9508871Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.Type: GrantFiled: September 8, 2015Date of Patent: November 29, 2016Assignee: RICOH COMPANY, LTD.Inventors: Katsuyuki Sakurano, Takaaki Negoro, Yoshinori Ueda, Kazuhiro Yoneda, Katsuhiko Aisu, Yasukazu Nakatani, Hirofumi Watanabe
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Patent number: 9478568Abstract: A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.Type: GrantFiled: June 16, 2014Date of Patent: October 25, 2016Assignee: RICOH COMPANY, LTD.Inventors: Katsuhiko Aisu, Takaaki Negoro, Kazuhiro Yoneda, Katsuyuki Sakurano, Hirofumi Watanabe
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Patent number: 9472706Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.Type: GrantFiled: December 4, 2014Date of Patent: October 18, 2016Assignee: RICOH COMPANY, LTD.Inventors: Katsuyuki Sakurano, Takaaki Negoro, Katsuhiko Aisu, Kazuhiro Yoneda, Yasukazu Nakatani, Hirofumi Watanabe
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Patent number: 9472584Abstract: A phototransistor includes a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction. The first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region. The phototransistor further includes a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region.Type: GrantFiled: January 26, 2015Date of Patent: October 18, 2016Assignee: RICOH COMPANY, LTD.Inventors: Takaaki Negoro, Yoshihiko Miki, Katsuyuki Sakurano, Keiji Tsuda, Hirofumi Watanabe
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Publication number: 20160247847Abstract: A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.Type: ApplicationFiled: February 9, 2016Publication date: August 25, 2016Applicant: RICOH COMPANY, LTD.Inventors: Yoshinori Ueda, Kazuhiro Yoneda, Katsuhiko Aisu, Yasukazu Nakatani, Takaaki Negoro, Katsuyuki Sakurano, Hirofumi Watanabe
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Publication number: 20160195431Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.Type: ApplicationFiled: December 22, 2015Publication date: July 7, 2016Applicant: RICOH COMPANY, LTD.Inventors: Katsuhiko Aisu, Hirofumi Watanabe, Takaaki Negoro, Yoshinori Ueda, Yasukazu Nakatani, Kazuhiro Yoneda, Katsuyuki Sakurano
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Publication number: 20160133763Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.Type: ApplicationFiled: November 9, 2015Publication date: May 12, 2016Applicant: RICOH COMPANY, LTDInventors: Takaaki Negoro, Yoshinori Ueda, Katsuyuki Sakurano, Yasukazu Nakatani, Kazuhiro Yoneda, Katsuhiko Aisu
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Publication number: 20160126271Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.Type: ApplicationFiled: September 8, 2015Publication date: May 5, 2016Applicant: RICOH COMPANY, LTD.Inventors: Katsuyuki Sakurano, Takaaki Negoro, Yoshinori Ueda, Kazuhiro Yoneda, Katsuhiko Aisu, Yasukazu Nakatani, Hirofumi Watanabe
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Publication number: 20160027835Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.Type: ApplicationFiled: July 1, 2015Publication date: January 28, 2016Applicant: RICOH COMPANY, LTD.Inventors: Kazuhiro Yoneda, Hirofumi Watanabe, Takaaki Negoro, Katsuhiko Hyogo, Yasukazu Nakatani, Katsuyuki Sakurano
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Publication number: 20150264280Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.Type: ApplicationFiled: March 9, 2015Publication date: September 17, 2015Applicant: RICOH COMPANY, LTD.Inventors: Kazuhiro YONEDA, Hirofumi WATANABE, Takaaki NEGORO, Katsuhiko AISU, Yasukazu NAKATANI, Katsuyuki SAKURANO
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Publication number: 20150214413Abstract: A phototransistor includes a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction. The first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region. The phototransistor further includes a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region.Type: ApplicationFiled: January 26, 2015Publication date: July 30, 2015Applicant: RICOH COMPANY, LTD.Inventors: Takaaki NEGORO, Yoshihiko MIKI, Katsuyuki SAKURANO, Keiji TSUDA, Hirofumi WATANABE