Abstract: To provide an antifouling processing agent composition capable of imparting oil repellency and antifouling properties (stain release properties), while suppressing a reduction in the water absorbency of a textile product. This antifouling processing agent composition comprises: a fluorinated polymer comprising from 30 to 70 mass % of units based on F(CF2)nY—OCOCR?CH2 (wherein Y is an alkylene group, and R is a hydrogen atom, an alkyl group, or a halogen atom) and from 20 to 60 mass % of units based on CH2?CR1—COO—(R2O)q—R3 (wherein R1 is a hydrogen atom or a methyl group, R2 is an alkylene group, and R3 is a hydrogen atom, an alkyl group, a (meth)acryloyl group, or a glycidyl group), and having a number average molecular weight of 3,000-500,000; and a fluorinated amphoteric surfactant having a C1-6 perfluoroalkyl group or a C3-9 perfluoroalkenyl group, and having a number average molecular weight of less than 3,000.

Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.

Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M??(1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.

Abstract: A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step.

Abstract: To provide a polishing compound which can satisfy both high removal rate of an object to be polished and excellent property to eliminate the difference in level, and to provide a polishing method which can polish a wiring metal fast while suppressing increase of a wiring metal resistance and is excellent in the property to eliminate the difference in level. A polishing compound which comprises abrasive particles, an oxidizing agent, ammonium ions, polyvalent carboxylate ions, at least one chelating agent selected from the group consisting of pentaethylenehexamine, triethylenetetramine and tetraethylenepentamine, and an aqueous medium. Further, a polishing method of polishing a wiring metal 3 by using the polishing compound, after providing a wiring trench 2 on a resin substrate 1 and embedding the wiring metal 3 in the wiring trench 2.

Abstract: To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput. The polishing compound T comprises an oxidizing agent, an electrolyte and an aqueous medium, wherein ions formed from the electrolyte comprise ammonium ions, at least one type of organic carboxylate ions selected from the group consisting of polycarboxylate ions and hydroxycarboxylate ions, and at least one type of ions selected from the group consisting of carbonate ions, hydrogencarbonate ions, sulfate ions and acetate ions.

Abstract: An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.

Abstract: To provide a technique for realizing high-precision surface planarization when copper is used as a wiring metal. A polishing compound is used which comprises water; a peroxide oxidizer; a surface protective agent for copper; at least one first chelating agent selected from the group consisting of tartaric acid, malonic acid, malic acid, citric acid, maleic acid, oxalic acid and fumaric acid; and at least one second chelating agent selected from the group consisting of triethylenetetramine, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, tetraethylenepentamine, glycol-ether-diaminetetraacetic acid, trans-1,2-cyclohexanediaminetetraacetic acid, o-phenanthroline, and derivatives thereof.

Abstract: An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.

Abstract: A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step.

Abstract: A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application. A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.

Abstract: A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..