Abstract: The present invention describes a system for calibrating a plurality of cameras in an area. The system functions by using moving objects to calibrate, in particular using people. In addition, the system implements automatic re-calibration in a specific way to reduce human intervention, cost and time.

Abstract: The present invention describes a system for calibrating a plurality of cameras in an area. The system method and device functions by using moving objects to calibrate, in particular using people. In addition, the system implements automatic re-calibration in a specific way to reduce human intervention, cost and time.

Abstract: Embodiments of the present invention provide apparatuses and methods for identifying computer systems that pose a threat for potential dissemination of confidential information, and thereafter, scanning the computer systems for unauthorized activity related to potential dissemination of confidential information. Embodiments of the invention comprise compiling a list of user computer systems that are at risk of accessing, using, or disseminating confidential information; determining whether the computer systems on the list are available for scanning; and scanning the computer systems on the list to identify an incident related to potential or actual threats or breaches of confidential information.

Abstract: Embodiments of the present invention provide apparatuses and methods for identifying computer systems that pose a threat for potential dissemination of confidential information, and thereafter, scanning the computer systems for unauthorized activity related to potential dissemination of confidential information. Embodiments of the invention comprise compiling a list of user computer systems that are at risk of accessing, using, or disseminating confidential information; determining whether the computer systems on the list are available for scanning; and scanning the computer systems on the list to identify an incident related to potential or actual threats or breaches of confidential information.

Abstract: A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.

Abstract: A method of forming a dual-damascene wire. The method includes forming a via opening in a dielectric layer, filling the via opening with a polymeric formation including at least about 6% by weight of solids of thermal acid generator; heating the polymeric underlayer to a temperature greater than room temperature but less than about 180° C.; lithographically forming a trench in the dielectric layer and filling the via opening and the trench with an electrical conductor, a top surface of the electrical conductor substantially co-planer with the top surface of the second dielectric capping layer.

Abstract: A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a photoresist composition. The antireflective coating composition of the present invention comprises a polymer, which includes at least one monomer unit containing a lactone moiety and at least one monomer unit containing an absorbing moiety. The inventive antireflective coating composition is preferably organic solvent-strippable, insoluble in an aqueous alkaline developer for the photoresist composition after exposure to an imaging radiation, and inert to contact reactions with the photoresist composition. The present invention also discloses a method of forming patterned material features on a substrate using the compositions of the invention.

Abstract: A method and structure for an integrated via and line lithography followed by integrated via and line etch. A two-layered, negative resist based lithography is used to generate a dual damascene structure in the photoresist which is subsequently transferred into the underlying ILD using an lithography with an integrated RIE. A method is also provided to correct any misalignment between the via and trench during photolithography steps which would reduce the size of the via opening and impact the via resistance.

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

Abstract: A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl