Abstract: A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.

Abstract: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/?Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

Abstract: Passive components adapted for integration with at least one active semiconductor device, in an embodiment, comprise at least one metallic structure dimensioned and arranged to absorb and/or reflect a major fraction of incident electromagnetic radiation received at one or more wavelengths of a first group of wavelengths. This prevents radiation within the first group of wavelengths from being received and/or processed by the at least one active device. In an embodiment, one or more metallic structures are dimensioned and arranged to direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation within the second group of wavelengths by the at least one active semiconductor device. In some embodiments, the passive component comprises a passive optical filter for use in spectroscopic applications, and the active semiconductor device is a detector or sensor.

Abstract: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/?Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

Abstract: A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.

Abstract: An integrated distributed active radiator (DAR) device includes first and second conductors disposed adjacent to each other. The conductors define curves which close on themselves to within a distance of a gap. The first conductor first end is electrically coupled to the second conductor second end across the gap. The second conductor first end is electrically coupled to the first conductor second end across the gap. At least one active element is configured to produce a self-oscillation current at a frequency f0. The self-oscillation current has a first direction in the first conductor and a second direction in the second conductor. The DAR device is configured to generate a harmonic current which has the same direction in both conductors. The DAR device is configured to efficiently radiate electromagnetic energy at a harmonic frequency and to substantially inhibit the radiation of electromagnetic energy at the frequency f0.

Abstract: An RF lens includes a multitude of radiators adapted to transmit radio frequency electromagnetic EM waves whose phases are modulated so as to concentrate the radiated power in a small volume of space in order to power an electronic device positioned in that space. Accordingly, the waves emitted by the radiators are caused to interfere constructively at that space. The multitude of radiators are optionally formed in a one-dimensional or two-dimensional array. The electromagnetic waves radiated by the radiators have the same frequency but variable amplitudes.

Abstract: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/?Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

Abstract: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/?Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

Abstract: An integrated power amplifier includes a divider and a combiner. The integrated power amplifier also includes two or more amplifiers. Each of the amplifier input terminals is electrically coupled to a divider output terminal and each of the amplifier output terminals is electrically coupled to a combiner input terminal. At least one power sensor is configured to provide a power amplifier performance metric. The divider and the combiner include a plurality of actuators. Each actuator has at least one actuator control terminal which is configured to provide an actuator setting. The actuators are configured via the actuator control terminals to optimize the power amplifier performance metric. Methods to simulate the operation of a self-healing power amplifier and a process for the operation of a self-healing circuit are also described.

Abstract: An integrated distributed active radiator (DAR) device includes first and second conductors disposed adjacent to each other. The conductors define curves which close on themselves to within a distance of a gap. The first conductor first end is electrically coupled to the second conductor second end across the gap. The second conductor first end is electrically coupled to the first conductor second end across the gap. At least one active element is configured to produce a self-oscillation current at a frequency f0. The self-oscillation current has a first direction in the first conductor and a second direction in the second conductor. The DAR device is configured to generate a harmonic current which has the same direction in both conductors. The DAR device is configured to efficiently radiate electromagnetic energy at a harmonic frequency and to substantially inhibit the radiation of electromagnetic energy at the frequency f0.

Abstract: An integrated power amplifier includes a divider and a combiner. The integrated power amplifier also includes two or more amplifiers. Each of the amplifier input terminals is electrically coupled to a divider output terminal and each of the amplifier output terminals is electrically coupled to a combiner input terminal. At least one power sensor is configured to provide a power amplifier performance metric. The divider and the combiner include a plurality of actuators. Each actuator has at least one actuator control terminal which is configured to provide an actuator setting. The actuators are configured via the actuator control terminals to optimize the power amplifier performance metric. Methods to simulate the operation of a self-healing power amplifier and a process for the operation of a self-healing circuit are also described.

Abstract: A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric.