Patents by Inventor Kaveh F. Niazi

Kaveh F. Niazi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for reducing plasma charge damage for plasma processes
    Patent number: 7036453
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: May 2, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Apparatus for reducing plasma charge damage for plasma processes
    Publication number: 20040048492
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Application
    Filed: September 8, 2003
    Publication date: March 11, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Method of reducing plasma charge damage for plasma processes
    Patent number: 6660662
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: December 9, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
  • Method of reducing plasma charge damage for plasma processes
    Publication number: 20030024901
    Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
    Type: Application
    Filed: January 26, 2001
    Publication date: February 6, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga