Abstract: Non-volatile (NV) semiconductor memories and methods of operating the same to reduce or eliminate a need for an external capacitance are provided. In one embodiment, the memory includes a memory cell comprising a random access memory (RAM) portion and a NV memory portion, and the method comprises steps of: (i) initially erasing the NV memory portion; and (ii) on detecting a drop in power supplied to the memory, programming the NV memory portion with data from the RAM portion while powering the memory from a capacitor. On restoration of power data is recalled from the NV memory portion into the RAM portion, and the NV memory portion erased. Preferably, the capacitor is integrally formed on a single substrate with the NV memory portion and RAM portion. More preferably, the capacitor comprises intrinsic capacitance between elements of the memory formed on the substrate. Other embodiments are also disclosed.