Abstract: A method for producing a memory cell includes providing a non-conductive substrate, mounting a first conductor track made of conductive material on the non-conductive substrate, mounting a porous dielectric with or without redox-active molecules in a form of points on the first conductor track, and mounting a second conductor track orthogonally to the first conductor track, wherein the first and second conductor tracks have an electrode function at their intersection point, and wherein the porous dielectric is arranged between the electrodes. The method further includes mounting a passivation layer on the substrate, the first conductor track, the dielectric, and the second conductor track, so that the conductor track remains contactable. The first and the second conductor track form a memory at their intersection point with the dielectric arranged between them, in which the redox reaction of the redox-active molecules is configured to be driven by a voltage.

Abstract: A method for producing a memory cell includes providing a non-conductive substrate, mounting a first conductor track made of conductive material on the non-conductive substrate, mounting a porous dielectric with or without redox-active molecules in a form of points on the first conductor track, and mounting a second conductor track orthogonally to the first conductor track, wherein the first and second conductor tracks have an electrode function at their intersection point, and wherein the porous dielectric is arranged between the electrodes. The method further includes mounting a passivation layer on the substrate, the first conductor track, the dielectric, and the second conductor track, so that the conductor track remains contactable. The first and the second conductor track form a memory at their intersection point with the dielectric arranged between them, in which the redox reaction of the redox-active molecules is configured to be driven by a voltage.