Patents by Inventor Kazuaki Ebata

Kazuaki Ebata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SINTERED MATERIAL, AND PROCESS FOR PRODUCING SAME
    Publication number: 20140014500
    Abstract: A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 ?m3 or more in an amount of 0.03 vol % or less.
    Type: Application
    Filed: March 26, 2012
    Publication date: January 16, 2014
    Inventors: Shigekazu Tomai, Shigeo Matsuzaki, Koki Yano, Makoto Ando, Kazuaki Ebata, Masayuki Itose
  • LAMINATE STRUCTURE INCLUDING OXIDE SEMICONDUCTOR THIN FILM LAYER, AND THIN FILM TRANSISTOR
    Publication number: 20130221351
    Abstract: A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 ?m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
    Type: Application
    Filed: December 27, 2011
    Publication date: August 29, 2013
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Yuki Tsuruma, Shigeo Matsuzaki, Koki Yano
  • SPUTTERING TARGET
    Publication number: 20130140502
    Abstract: An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight).
    Type: Application
    Filed: June 1, 2011
    Publication date: June 6, 2013
    Inventors: Shigekazu Tomai, Kazuaki Ebata, Shigeo Matsuzaki, Koki Yano
  • SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM
    Publication number: 20130082218
    Abstract: An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.
    Type: Application
    Filed: May 24, 2011
    Publication date: April 4, 2013
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano, Kazuyoshi Inoue
  • In-Ga-O OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHODS THEREFOR
    Publication number: 20120292617
    Abstract: An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-saluted in the indium oxide, and an atomic ratio Ga/(Ga+In) is 0.10 to 0.15.
    Type: Application
    Filed: January 14, 2011
    Publication date: November 22, 2012
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano