Patents by Inventor Kazuaki Ejiri

Kazuaki Ejiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing method, and washing/rinsing method associated therewith
    Publication number: 20060094242
    Abstract: In a chemical mechanical polishing method for polishing a low-k material insulating layer formed on a semiconductor wafer, aqueous abrasive slurry composed of a water component, an abrasive component, a first additive for making the low-k material insulating layer of the semiconductor wafer hydrophilic in nature, and a second additive for adding acidity to the aqueous abrasive slurry, is prepared. The aqueous abrasive slurry is feed to a rotating polishing pad having a larger diameter than that of the semiconductor wafer. The low-k material insulating layer of the semiconductor wafer is applied and pressed onto the rotating polishing pad while rotating the semiconductor wafer in the same rotational direction as that of the rotating polishing pad, whereby a polishing rate of the low-k material insulating layer of the semiconductor wafer is improved.
    Type: Application
    Filed: December 13, 2005
    Publication date: May 4, 2006
    Inventor: Kazuaki Ejiri
  • Chemical mechanical polishing method, and washing/rinsing method associated therewith
    Patent number: 7005384
    Abstract: In a chemical mechanical polishing method for polishing a low-k material insulating layer formed on a semiconductor wafer, aqueous abrasive slurry composed of a water component, an abrasive component, a first additive for making the low-k material insulating layer of the semiconductor wafer hydrophilic in nature, and a second additive for adding acidity to the aqueous abrasive slurry, is prepared. The aqueous abrasive slurry is feed to a rotating polishing pad having a larger diameter than that of the semiconductor wafer. The low-k material insulating layer of the semiconductor wafer is applied and pressed onto the rotating polishing pad while rotating the semiconductor wafer in the same rotational direction as that of the rotating polishing pad, whereby a polishing rate of the low-k material insulating layer of the semiconductor wafer is improved.
    Type: Grant
    Filed: December 31, 2003
    Date of Patent: February 28, 2006
    Assignee: NEC Electronics Corp.
    Inventor: Kazuaki Ejiri
  • Chemical mechanical polishing method, and washing/rinsing method associated therewith
    Publication number: 20040152325
    Abstract: In a chemical mechanical polishing method for polishing a low-k material insulating layer formed on a semiconductor wafer, aqueous abrasive slurry composed of a water component, an abrasive component, a first additive for making the low-k material insulating layer of the semiconductor wafer hydrophilic in nature, and a second additive for adding acidity to the aqueous abrasive slurry, is prepared. The aqueous abrasive slurry is feed to a rotating polishing pad having a larger diameter than that of the semiconductor wafer. The low-k material insulating layer of the semiconductor wafer is applied and pressed onto the rotating polishing pad while rotating the semiconductor wafer in the same rotational direction as that of the rotating polishing pad, whereby a polishing rate of the low-k material insulating layer of the semiconductor wafer is improved.
    Type: Application
    Filed: December 31, 2003
    Publication date: August 5, 2004
    Applicant: NEC Electronics Corporation
    Inventor: Kazuaki Ejiri