Abstract: A glass is an amorphous oxide glass. An SiO2 content ranges from 56 mol % to 80 mol %, an Li2O content is 2.00 mol % or less, a B2O3 content ranges from 0 mol % to 4 mol %, a total content of MgO and CaO (MgO+CaO) ranges from 9 mol % to 40 mol %, and the oxide glass has a specific gravity of 2.75 g/cm3 or less, and a glass transition temperature of 650° C. or higher.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A photosensitive drum is rotatable about a drum axis extending in a first direction. A frame includes a first side plate located at first end in the first direction and a second side plate spaced from the first side plate in the first direction. The frame rotatably supports the photosensitive drum between the first side plate and the second side plate in the first direction. The frame holds a developer cartridge. A lock lever is pivotable about a pivot axis extending in a second direction intersecting with the first direction. The lock lever is movable between a lock position at which the developer cartridge is locked on the frame and a release position at which the developer cartridge is unlocked from the frame.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: A ring-shaped glass spacer is to be arranged in contact with a magnetic disk in a hard disk drive device. A film that contains at least one of tin oxide, zinc oxide, and titanium oxide is formed on each surface of a main surface, and an outer circumferential edge surface, and an inner circumferential edge surface of the glass spacer. The thickness of the film on a center portion of the outer circumferential edge surface of the glass spacer is larger than the thickness of the film on a center portion of the inner circumferential edge surface of the glass spacer.

Abstract: A glass, which is a glass for a magnetic recording medium substrate or for a glass spacer for a magnetic recording and reproducing apparatus, is an amorphous oxide glass. An SiO2 content ranges from 56 mol % to 80 mol %, an Li2O content ranges from 1 mol % to 10 mol %, a B2O3 content ranges from 0 mol % to 4 mol %, a Na2O content is 0 mol %, a total content of MgO and CaO (MgO+CaO) ranges from 9 mol % to 40 mol %, and the oxide glass has a specific gravity of 2.75 g/cm3 or less, a glass transition temperature of 650° C. or higher, and a Young's modulus of 90 GPa or more.

Abstract: A method for manufacturing a ring-shaped glass spacer to be arranged in contact with a magnetic disk in a hard disk drive device includes processing for forming a film on the surface of a glass spacer main body, which is the base of the glass spacer. In the processing, the film is formed by passing the glass spacer main body through a location where the components of the film are in a spray state while an outer circumferential edge surface of the glass spacer main body is being rotated in a circumferential direction thereof.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

Abstract: An infrared camera, comprising: an imaging section that images a subject; and an execution section that executes image processing on a captured image captured by the maging section, wherein: the imaging section includes: an uncooled infrared ray detection section that detects infrared rays radiated from the subject, and a black body section that covers a portion of the infrared ray detection section, and the execution section includes a processor, wherein the processor is configured to: acquire the captured image and a component of noise extracted from the captured image captured at the portion covered by the black body section, and remove the noise component from all of the captured image.

Abstract: In an amorphous glass, an SiO2 content is in a range of 56 mol% or more. An MgO content is in a range of 15 mol% or more and 28 mol% or less. An Li2O content is in a range of 0.2 mol% or more. An Na2O content is in a range of 5 mol% or less. A total content of Al2O3, MgO, and CaO (Al2O3 + MgO + CaO) is 36.50 mol% or less. The total content of SiO2, MgO, Li20, Al2O3, and CaO (SiO2 + MgO + Li20 + Al2O3 + CaO) is 97.5 mol% or more. A mole ratio of the total content of SiO2 and MgO relative to the Li2O content [(SiO2 + MgO) / Li2O] is 13 or more. A mole ratio of a CaO content relative to a total content of Al2O3 and MgO [CaO / (Al2O3 + MgO)] is 0.10 or less.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.

Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: A method for manufacturing a ring-shaped glass spacer to be arranged in contact with a magnetic disk in a hard disk drive device includes processing for forming a film on the surface of a glass spacer main body, which is the base of the glass spacer. In the processing, the film is formed by passing the glass spacer main body through a location where the components of the film are in a spray state while an outer circumferential edge surface of the glass spacer main body is being rotated in a circumferential direction thereof.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.

Abstract: Provided is a glass for a magnetic recording medium substrate, which is an amorphous glass, in which an SiO2 content is in a range of 54 mol % or more and 62 mol % or less, an MgO content is in a range of 15 mol % or more and 28 mol % or less, an Li2O content is in a range of 0.2 mol % or more, and an Na2O content is in a range of 5 mol % or less.