Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high resolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Abstract: For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

Abstract: A transparent conductive film includes a crystalline transparent conductive layer obtained by forming an amorphous transparent conductive layer on a polymeric film substrate by sputtering, and crystallizing the amorphous transparent conductive layer. Defining that the amorphous transparent conductive layer has a carrier density represented by na×1019 and Hall mobility represented by ?a, that the crystalline transparent conductive layer has a carrier density represented by nc×1019 and Hall mobility represented by ?c, and that a length of motion L is represented by {(nc?na)2+(?c??a)}1/2, the amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10?60)×1019/cm3 and Hall mobility ?a of 10-25 cm2/V·s, and the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80?150)×1019/cm3 and Hall mobility ?c of 20-40 cm2/V·s, and the length of motion L is 50-150.

Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm or more and 2.8×10?4 ?·cm or less.

Abstract: For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Abstract: A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a concentration of tin oxide in a thickness direction thereof. A maximum value of the concentration of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.

Abstract: A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: A method for producing a transparent conductive film includes: forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate, wherein the transparent conductive film includes an inorganic undercoat layer formed by means of a vacuum film-forming method between the polymer film substrate and the transparent conductive layer, and an existing atomic amount of carbon atoms in the transparent conductive layer is 3×1020 atoms/cm3 or less.

Abstract: The transparent conductive film of the invention includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a tetravalent metal oxide content of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100 (%), has a thickness of 10 to 40 nm and a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm, has main X-ray diffraction peaks corresponding to (222) and (440) planes, and has a ratio (I440/I222) of (440) peak intensity to (222) peak intensity of less than 0.2. The transparent conductive film of the invention has a crystalline thin coating with a low level of specific resistance and surface resistance.

Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm or more and 2.8×10—4 ?·cm or less.

Abstract: A transparent conductive film includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}=100(%), has a thickness in the range of more than 40 to 200 nm, a specific resistance of 1.2×10?4 to 2.0×10?4 ?·cm, main X-ray diffraction peaks corresponding to (222) and (440) planes and has a ratio (I440/I222) of (440) peak intensity (I440) to (222) peak intensity (I222) of less than 0.3, and has an internal stress of 700 MPa or less as determined by an X-ray stress measurement method.

Abstract: A transparent conductive film includes a polymeric film substrate and a transparent conductive layer on at least one of main surfaces of the polymeric film substrate. The transparent conductive layer is a crystalline transparent conductive layer comprising an indium tin composite oxide. The transparent conductive layer has a residual stress of less than or equal to 600 MPa. The transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm to 3.0×10?4 ?·cm. The transparent conductive layer has a thickness of 15 nm to 40 nm.

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity. The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility ?a of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc?na)2+(?c??a)2}1/2 is 50 to 150.

Abstract: A transparent conductive film includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}=100(%), has a thickness in the range of more than 40 to 200 nm, a specific resistance of 1.2×10?4 to 2.0×10?4 ?·cm, main X-ray diffraction peaks corresponding to (222) and (440) planes and has a ratio (I440/I222) of (440) peak intensity (I440) to (222) peak intensity (I222) of less than 0.3, and has an internal stress of 700 MPa or less as determined by an X-ray stress measurement method.

Abstract: A method for producing a transparent conductive film includes: forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: The transparent conductive film of the invention includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a tetravalent metal oxide content of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100 (%), has a thickness of 10 to 40 nm and a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm, has main X-ray diffraction peaks corresponding to (222) and (440) planes, and has a ratio (I440/I222) of (440) peak intensity to (222) peak intensity of less than 0.2. The transparent conductive film of the invention has a crystalline thin coating with a low level of specific resistance and surface resistance.